A dielectric analysis model for the fouling layer on the polyethersulfone composite ultrafiltration （UF） membrane and solution system, which consists of the solution, concentration polarization layer （CPL）, and ca...A dielectric analysis model for the fouling layer on the polyethersulfone composite ultrafiltration （UF） membrane and solution system, which consists of the solution, concentration polarization layer （CPL）, and cake layer, was established by virtue of the interfacial polarization and the electrostatic field theory. The effect of some important parameters, such as the depth, conductivity of CPL, and cake layer, on the dielectric spectroscopy （or dielectric relaxation properties） of the UF system was discussed by the parameter sensitivity analysis and the dielectric measurement. The simulations indicate that the CPL can be created rapidly and the cake layer formation is the dynamic balance process of growth and erosion in the process of UF. The key factor affecting on the dielectric spectrum of UF system is the electrical properties of the CPL and the cake layer. In comparison to the results of dielectric measurement, the simulations indicate that the model proposed in this work is valid and reliable to some degree for describing and explaining the dielectric relaxation phenomenon in UF system. It is very important to further understand the fouling behavior of membrane surface and optimize the controlling techniques of membrane fouling in the process of UF.展开更多
A challenge in the study of turbulent boundary layers(TBLs) is to understand the non-equilibrium relaxation process after separation and reattachment due to shock-wave/boundary-layer interaction. The classical boundar...A challenge in the study of turbulent boundary layers(TBLs) is to understand the non-equilibrium relaxation process after separation and reattachment due to shock-wave/boundary-layer interaction. The classical boundary layer theory cannot deal with the strong adverse pressure gradient, and hence, the computational modeling of this process remains inaccurate. Here, we report the direct numerical simulation results of the relaxation TBL behind a compression ramp, which reveal the presence of intense large-scale eddies, with significantly enhanced Reynolds stress and turbulent heat flux. A crucial finding is that the wall-normal profiles of the excess Reynolds stress and turbulent heat flux obey a β-distribution, which is a product of two power laws with respect to the wall-normal distances from the wall and from the boundary layer edge. In addition, the streamwise decays of the excess Reynolds stress and turbulent heat flux also exhibit power laws with respect to the streamwise distance from the corner of the compression ramp. These results suggest that the relaxation TBL obeys the dilation symmetry, which is a specific form of self-organization in this complex non-equilibrium flow. The β-distribution yields important hints for the development of a turbulence model.展开更多
A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe l...A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.展开更多
基金This work was supported by the Natural Science Foundation of Shandong Province of China （No.Q2007B01）.
文摘A dielectric analysis model for the fouling layer on the polyethersulfone composite ultrafiltration （UF） membrane and solution system, which consists of the solution, concentration polarization layer （CPL）, and cake layer, was established by virtue of the interfacial polarization and the electrostatic field theory. The effect of some important parameters, such as the depth, conductivity of CPL, and cake layer, on the dielectric spectroscopy （or dielectric relaxation properties） of the UF system was discussed by the parameter sensitivity analysis and the dielectric measurement. The simulations indicate that the CPL can be created rapidly and the cake layer formation is the dynamic balance process of growth and erosion in the process of UF. The key factor affecting on the dielectric spectrum of UF system is the electrical properties of the CPL and the cake layer. In comparison to the results of dielectric measurement, the simulations indicate that the model proposed in this work is valid and reliable to some degree for describing and explaining the dielectric relaxation phenomenon in UF system. It is very important to further understand the fouling behavior of membrane surface and optimize the controlling techniques of membrane fouling in the process of UF.
基金supported by the National Natural Science Foundation of China (Grant Nos. 11452002, 11372008, and 11521091)the Aeronautical Science Foundation of China (Grant No. 2014ZA71001)
文摘A challenge in the study of turbulent boundary layers(TBLs) is to understand the non-equilibrium relaxation process after separation and reattachment due to shock-wave/boundary-layer interaction. The classical boundary layer theory cannot deal with the strong adverse pressure gradient, and hence, the computational modeling of this process remains inaccurate. Here, we report the direct numerical simulation results of the relaxation TBL behind a compression ramp, which reveal the presence of intense large-scale eddies, with significantly enhanced Reynolds stress and turbulent heat flux. A crucial finding is that the wall-normal profiles of the excess Reynolds stress and turbulent heat flux obey a β-distribution, which is a product of two power laws with respect to the wall-normal distances from the wall and from the boundary layer edge. In addition, the streamwise decays of the excess Reynolds stress and turbulent heat flux also exhibit power laws with respect to the streamwise distance from the corner of the compression ramp. These results suggest that the relaxation TBL obeys the dilation symmetry, which is a specific form of self-organization in this complex non-equilibrium flow. The β-distribution yields important hints for the development of a turbulence model.
基金supposed by the National Basic Research Program of Chinasupposed by the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTCthe Science and Technology on Analog Integrated Circuit Laboratory,CETC
文摘A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.
