Ferroelectric polymer poly(vinylidene fluoride)(PVDF)has received great research interest because of its special electroactive properties which are strongly dependent on the crystalline structures and in turn processi...Ferroelectric polymer poly(vinylidene fluoride)(PVDF)has received great research interest because of its special electroactive properties which are strongly dependent on the crystalline structures and in turn processing conditions.The effect of molecular weight and crystallization temperature on the micro-structure and macro-properties of PVDF films casted from dimethyl sulfoxide(DMSO)solvent is investigated.The results demonstrated that a low molecular weight(180 kg/mol)and a low evaporation temperature(50℃)favored the formation of polarγ-phase,while a high molecular weight(1000 kg/mol)and a high evaporation temperature(125℃)made PVDF crystallize intoα-phase.Compared with films casted at 50℃,films casted at 125℃exhibited higher dielectric loss at a low electric field and less loss conductivity at a high electric field,which was due to their low degrees of crystallinity and fine evaporation of the solvent,respectively.PVDF with a molecular weight of 180 kg/mol casted at 125℃exhibited the highest remnant polarization(0.062 C/m^(2))among all of the solution-processed films,being a result of high chain mobility resulted from the low molecular weight.展开更多
Ferroelectric Ba0.65Sr0.35TiO3 (BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 ...Ferroelectric Ba0.65Sr0.35TiO3 (BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.展开更多
基金Fundamental Research Funds for the Central Universities,China(No.2232021D-01)Shanghai Pujiang Program,China(No.20PJ1400600)。
文摘Ferroelectric polymer poly(vinylidene fluoride)(PVDF)has received great research interest because of its special electroactive properties which are strongly dependent on the crystalline structures and in turn processing conditions.The effect of molecular weight and crystallization temperature on the micro-structure and macro-properties of PVDF films casted from dimethyl sulfoxide(DMSO)solvent is investigated.The results demonstrated that a low molecular weight(180 kg/mol)and a low evaporation temperature(50℃)favored the formation of polarγ-phase,while a high molecular weight(1000 kg/mol)and a high evaporation temperature(125℃)made PVDF crystallize intoα-phase.Compared with films casted at 50℃,films casted at 125℃exhibited higher dielectric loss at a low electric field and less loss conductivity at a high electric field,which was due to their low degrees of crystallinity and fine evaporation of the solvent,respectively.PVDF with a molecular weight of 180 kg/mol casted at 125℃exhibited the highest remnant polarization(0.062 C/m^(2))among all of the solution-processed films,being a result of high chain mobility resulted from the low molecular weight.
文摘Ferroelectric Ba0.65Sr0.35TiO3 (BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.