Effects of Electrode on Resistance Switching Properties of ZnMn_2O_4 Films Deposited by Magnetron Sputtering

ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.

Fracture behavior and microstructure analysis of Al2O3–MgO–CaO castables for steel-ladle purging plugs

Three different castables based on the Al_2O_3–MgO –CaO system were prepared as steel-ladle purging plug refractories： corundum-based low-cement castable（C-LCC）, corundum-spinel-based low-cement castable（C-S-LCC）, and corundum-spinel no-cement castable（C-S-NCC）（hydratable alumina（ρ-Al_2O_3） bonded）. The fracture behavior at room temperature was tested by the method of ＂wedge-splitting＂ on samples pre-fired at different temperatures; the specific fracture energy G′f and notched tensile strength σNT were obtained from these tests. In addition, the Young＇s modulus E was measured by the method of resonance frequency of damping analysis（RFDA）. The thermal stress resistance parameter R′′′′ calculated using the values of G′f, σNT, and E was used to evaluate the thermal shock resistance of the materials. According to the microstructure analysis results, the sintering effect and the bonding type of the matrix material were different among these three castables, which explains their different fracture behaviors.

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn_2O_4/p^+-Si Device

ZnMn_2O_4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn_2O_4/p^+-Si structure was fabricated. The microstructure of ZnMn_2O_4 films and the resistive switching behavior of Ag/ZnMn_2O_4/p^+-Si device were investigated. ZnMn_2O_4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn_2O_4/p^+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state(HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state(LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.

Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors

As a critical command center in organisms,the brain can execute multiple intelligent interactions through neural networks,including memory,learning and cognition.Recently,memristive-based neuromorphic devices have been widely developed as promising technologies to build artificial synapses and neurons for neural networks.However,multiple information interactions in artificial intelligence devices potentially pose threats to information security.Herein,a transient form of heterogeneous memristor with a stacked structure of Ag/MgO/SiN_(x)/W is proposed,in which both the reconfigurable resistive switching behavior and volatile threshold switching characteristics could be realized by adjusting the thickness of the SiN_(x)layer.The underlying resistive switching mechanism of the device was elucidated in terms of filamentary and interfacial effects.Representative neural functions,including short-term plasticity(STP),the transformation from STP to long-term plasticity,and integrate-and-fire neuron functions,have been successfully emulated in memristive devices.Moreover,the dissolution kinetics associated with underlying transient behaviors were explored,and the water-assisted transfer printing technique was exploited to build transient neuromorphic device arrays on the water-dissolvable poly(vinyl alcohol)substrate,which were able to formless disappear in deionized water after 10-s dissolution at room temperature.This transient form of memristive-based neuromorphic device provides an important step toward information security reinforcement for artificial neural network applications.

Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons

By using a combined method of density functional theory and non-equilibrium Green＇s function formalism,we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons（APNRs）.The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal.Meanwhile,obvious negative differential resistance（NDR） behaviors are obtained by tuning the doping position and concentration.In particular,with reducing doping concentration,NDR peak position can enter into m V bias range.These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs.

Microstructure formation and electrical resistivity behavior of rapidly solidified Cu-Fe-Zr immiscible alloys

The immiscible Cu-Fe alloy was characterized by a metastable miscibility gap.With the addition element Zr,the miscibility gap can be extended into the Cu-Fe-Zr ternary system.The effect of the atomic ratio of Cu to Fe and Zr content on the behavior of liquid-liquid phase separation was studied.The results show that liquid-liquid phase separation into Cu-rich and Fe-rich liquids took place in the as-quenched Cu-Fe-Zr alloy.A glassy structure with nanoscale phase separation was obtained in the as-quenched(Cu0.5Fe0.5)40Zr60 alloy sample,exhibiting a homogeneous distribution of glassy Cu-rich nanoparticles in glassy Fe-rich matrix.The microstructural evolution and the competitive mechanism of phase formation in the rapidly solidified Cu-Fe-Zr system were discussed in detail.Moreover,the electrical property of the as-quenched Cu-Fe-Zr alloy samples was examined.It displays an abnormal change of electrical resistivity upon temperature in the nanoscale-phase-separation metallic glass.The crystallization behavior of such metallic glass has been discussed.

An Empirical Study of Public Response to a Waste-to-Energy Plant in China:Effects of Knowledge,Risk,Benefit and Systematic Processing

With the development of urbanization in China,tons of municipal solid waste have been produced and disposed Incineration is the best way to deal with municipal solid waste in China but this practice often is opposed and resisted by the public who live nearby.This study systematically analyzed the risk responses of the public,in particular factors affecting the public’s resistant behavior We conducted a survey and collected 376 valid questionnaires which we used for the analysis.We used the structural equation model and path analysis for the examination,and the results showed that risk perception was a critical factor predicting the resistant behavior of the public surrounding the wasteto-energy(WTE)plant.Benefit perception had a negative,but insignificant,impact on the public’s resistant behavior.We found a negative correlation between benefit perception and risk perception but the relationship was weakened when we added systematic processing to the path analysis.The impact of system processing on risk perception was greater than that of benefit perception;that is,systematic processing was better in explaining the risk judgment of the public than benefit perception.Problem knowledge was a significant indicator in predicting risk perception and systematic processing and technology knowledge was a significant indicator in predicting risk perception and benefit perception.Systematic processing increased the public’s risk judgment to the WTE plant.Finally,we discussed practical implications and limitations.