Rice planthopper resistance of interspecific protop last fusin line"pf9279" between O.sative and O.officinalis

An interspecific hybrid line pf9279 was obtained by proto-plast fusion between 02428(japonica, with a wide com-patibility gene) and CNW240 (O. officinalis, fromMalaysia) at CNRRI in 1992. Possible introgression of

Breeding of near-isogenic japonica rice lines with three major genes for resistance to bacterial blight

From 1986 to 1993, a set of near-isogenic japonicarice Iines with three major genes Xα-3, Xα - 4,and Xα-12 for resistance to bacterial blight(Xan-thomonas oryzae pv.oryzae)were developed anddesignated as CBB3, CBB4, and CBB12 respective-

Evaluatien of Near-lsogenic Rice Lines with 8 Genes for Bacterial Blight Resistance to Strains in China

A set of near-isogenic rice lines withmonogenic resistance to bacterial blight weredeveloped by IRRI.The Cultivar IR24 wasused as the recurred parent.They wereevaluated with 6 races of Xanthomonascampestris pv.oryzae(Xco)in the Philip-pines at the maximum tillering and the bootingstages by ZHANG and MEW at IRRI in 1989.

Defensive physiological characters of Pyropia yezoensis resistant lines to the red rot disease

To explore ef fective physiological indexes to distinguish the resistant lines and susceptible lines of Pyt hium porphyrae,the causal agent of red rot disease of Pyropia yezoensis,and establish the disease-resistance breeding strategy,we obtained and analyzed the candidate resistant and susceptible lines by population selection.Gametophytes of the candidate lines were cultured in seawater containing Pyt.porphyrae zoospores.Antioxidase activities,including superoxide dismutase(SOD),peroxidase(POD)and polyphenol oxidase(PPO),were measured and compared between the two lines before and after infection.In the resistant lines,SOD and POD activities increased and then decreased,but PPO activity rose with the prolongation of the infection time.The phenylalanine ammonia lyase(PAL)activities also increased and then decreased after infection,but it had significantly different expression in the two lines without pathogen attack.The synthesis rates ofβ-1,3-glucanase,and cell-wall degrading enzyme were different from each other between the two lines after infection of P yt.porphyrae.Comparison in the contents of malondialdehyde(MDA)and reactive oxygen species(ROS)in the two lines showed that,the two contents varied synchronously in response to the pathogen attack.Changes of these enzymes activities or contents demonstrated that Pyr.yezoensis could resist against the pathogen of P yt.porphyrae with the antioxidant defense capacity.In addition,β-1.3-glucanase content showed extremely significant dif ference between the two lines,and the PAL had consistent expression dif ference.Therefore,phenylalanine ammonia lyase(PAL)andβ-1,3-glucanase can be considered as an ef fective index to distinguish susceptible line and resistant line,with which the workload of the resistant breeding could be reduced in the future.

Fine Mapping and Candidate Gene Analysis of Resistance Gene R_(SC3Q) to Soybean mosaic virus in Qihuang 1

Soybean mosaic virus （SMV） disease is one of the most destructive viral diseases in soybean （Glycine max （L.） Merr.）. SMV strain SC3 is the major prevalent strain in huang-huai and Yangtze valleys, China. The soybean cultivar Qihuang 1 is of a rich resistance spectrum and has a wide range of application in breeding programs in China. In this study, F1, F2 and F2：3 from Qihuang 1×nannong 1138-2 were used to study inheritance and linkage mapping of the SC3 resistance gene in Qihuang 1. The secondary F2 population and near isogenic lines （nILs） derived from residual heterozygous lines （RhLs） of Qihuang 1×nannong 1138-2 were separatively used in the ifne mapping and candidate gene analysis of the resistance gene. Results indicated that a single dominant gene （designated RSC3Q） controls resistance, which was located on chromosome 13. Two genomic-simple sequence repeat （SSR） markers BARCSOYSSR_13_1114 and BARCSOYSSR_13_1136 were found lfanking the two sides of the RSC3Q. The interval between the two markers was 651 kb. Quantitative real-time PCR analysis of the candidate genes showed that ifve genes （Glyma13g25730, 25750, 25950, 25970 and 26000） were likely involved in soybean SMV resistance. These results would have utility in cloning of RSC3Q resistance candidate gene and marker-assisted selection （MaS） in resistance breeding to SMV.

RESEARCH AND APPLICATION OF AS-CAST WEAR RESISTANCE HIGH CHROMIUM CAST IRON

The influence of alloy elements, such as boron and silicon, on the microstructure and properties of as cast high chromium cast iron is studied. The results show that boron and silicon have a great effect on the mechanical properties and the wear resistance. Through proper addition of boron and silicon, the properties of as cast high chromium cast iron can be improved effectively. Through analyzing the distribution of elements by scanning electron microscope, it has been shown that the addition of boron and silicon lowers the mass fraction of chromium saturated in as cast austenite, and makes it unstable and liable to be transformed into martensite. The as cast high chromium cast iron with proper content of boron and silicon is suitable for the manufacture of lining for asphalt concrete mixer and its wear resistance is 14 times that of lining made of low alloy white cast iron.

Establishment and characterization of new wheat-Thinopyrum ponticum addition and translocation lines with resistance to Ug99 races

Ug99, also designated as TFKSK, is a race of Puccinia graminis Pers.：Pers f. sp. tn＇tici Eriks. and E. Henn （Pgt） with broad virulence to wheat. It is the first known Pgt race possessing virulence to Sr31, a stem rust resistance （Sr） gene deployed in wheat varieties world- wide （Singh et al., 2011 ）. Since the first detection of TFKSK in 1998, a total of 13 Ug99 variants have been identified in several African countries.

Development of Triticum aestivume——Leymus mollis Translocation Lines and Identification of Resistance to Stripe Rust

Wheat stripe rust, caused by Puccinia striiformis f. sp. tritici, is one of the most widely distributed and destructive fungal diseases worldwide. Since 1995, most Chinese wheat cultivars have lost their stripe rust resistance due to the subsequent emergence of the new races CYR30, CYR31, CYR32, and CYR33 （Han et al., 2010）. Therefore, it is necessary to seek effective resistance genes and develop new resistance germ- plasm for wheat resistance breeding.

Characterization of Three Novel Wheat LThinopyrum intermedium Addition Lines with Novel Storage Protein Subunits and Resistance to Both Powdery Mildew and Stripe Rust

Wide hybridization is an effective approach for enhancing the resistance of bread wheat （Triticum aestivum L.） to biotic and abiotic stresses by introducing favorable alien genes （Sepsi et al., 2008）. Wheatgrass, Thinopyrum intermedium （Host） Barkworth ＆ D.R. Dewey or Agropyron intermedium （Host） Beauvoir （2n = 42; genome formula JJjSjSstst）, is a perennial species in the tribe Triticeae and an important source of wheat improvement for biotic and abiotic stress resistance and quality-related traits, such as high grain protein concentration （Chen et al., 1998; 2001; 2003; Han et al., 2004; Li and Wang, 2009）. In addition, the ready crossing ability of wheatgrass with various Triticum species has made it popular in germ- plasm development.

Optimization of ohmic contact for InP-based transferred electronic devices

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.