High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditio...Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.展开更多
The preparation of lead-free thick-film resistors are reported:using RuO 2 and ruthenates as conductive particles,glass powders composed of B 2 O 3,SiO 2,CaO and Al2 O 3 as insulating phase,adding organic matter which...The preparation of lead-free thick-film resistors are reported:using RuO 2 and ruthenates as conductive particles,glass powders composed of B 2 O 3,SiO 2,CaO and Al2 O 3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al 2 O 3 substrates,and then sintering in a belt furnace.X-ray diffraction(XRD) and electron scanning microscopy(SEM) have been used to characterize the conductive particles.The resistors exhibit good refiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80Ω/□ to 600Ω/□.The resistors prepared are qualified for common use.展开更多
The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing...The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.展开更多
This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels du...This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.展开更多
Phenolic resin(PF) and nano-SiO2 were used to improve the curing property and high humidity resistance of epoxy resin (EP) and methyl nadic anhydride (MNA) resistor paint, respectively. Hydrogen bonds, formed between ...Phenolic resin(PF) and nano-SiO2 were used to improve the curing property and high humidity resistance of epoxy resin (EP) and methyl nadic anhydride (MNA) resistor paint, respectively. Hydrogen bonds, formed between phenolic resin and nano-SiO2 in alcohol, made nano-SiO2 disperse easily in EP/MNA paint through phenolic resin without being treated by supersonic vibration. When the mass ratio of PF to EP in paint is 3:7, the formed composite paint film can be cured in 2 min at 170 ℃ . When the mass ratio of nano-SiO2 to PF in paint is 3:100, the property of high humidity resistance of the composite paint is the best, meeting the requirement of varying ratio of resistance less than 0.1% after experiment on high humidity resistance. SEM analysis shows the surface of the composite paint film is smooth, glassy, tight and homogeneous, without acicular air holes.展开更多
Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resi...Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of bandlike resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH^- ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH^- ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH^- ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.展开更多
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
文摘Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.
文摘The preparation of lead-free thick-film resistors are reported:using RuO 2 and ruthenates as conductive particles,glass powders composed of B 2 O 3,SiO 2,CaO and Al2 O 3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al 2 O 3 substrates,and then sintering in a belt furnace.X-ray diffraction(XRD) and electron scanning microscopy(SEM) have been used to characterize the conductive particles.The resistors exhibit good refiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80Ω/□ to 600Ω/□.The resistors prepared are qualified for common use.
文摘The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.
文摘This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.
基金Supported by Science and Technology Committee of Tianjin(No06YFGPGX08400)
文摘Phenolic resin(PF) and nano-SiO2 were used to improve the curing property and high humidity resistance of epoxy resin (EP) and methyl nadic anhydride (MNA) resistor paint, respectively. Hydrogen bonds, formed between phenolic resin and nano-SiO2 in alcohol, made nano-SiO2 disperse easily in EP/MNA paint through phenolic resin without being treated by supersonic vibration. When the mass ratio of PF to EP in paint is 3:7, the formed composite paint film can be cured in 2 min at 170 ℃ . When the mass ratio of nano-SiO2 to PF in paint is 3:100, the property of high humidity resistance of the composite paint is the best, meeting the requirement of varying ratio of resistance less than 0.1% after experiment on high humidity resistance. SEM analysis shows the surface of the composite paint film is smooth, glassy, tight and homogeneous, without acicular air holes.
基金Supported by the National Natural Science Foundation of China(No.61201038)
文摘Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of bandlike resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH^- ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH^- ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH^- ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.
