A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The ...A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.展开更多
We experimentally demonstrate a simple modulation-free scheme for ofset locking the frequency of a laser using bufer gas-induced resonance. Our scheme excludes the limitation of low difraction efciency and laser input...We experimentally demonstrate a simple modulation-free scheme for ofset locking the frequency of a laser using bufer gas-induced resonance. Our scheme excludes the limitation of low difraction efciency and laser input intensity when an acousto-optic modulator is applied to shift the laser frequency from the resonance. We show the stabilization of a strong 795- nm laser detuned up to 550 MHz from the 87Rb 5S1/2 F=2→5P1/2F'=2 transition. The locking range can be modifed by controlling the bufer gas pressure. A laser line width of 2 MHz is achieved over 10 min.展开更多
基金supported by the National Natural Science Foundation of China(No.61473166)
文摘A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.
基金supported by the National Natural Science Foundation of China(Nos.60925022,10804097,and 11104243)the National "973" Program of China(No.2013CB329501)the Fundamental Research Funds for the Central Universities(No.2012FZA3001)
文摘We experimentally demonstrate a simple modulation-free scheme for ofset locking the frequency of a laser using bufer gas-induced resonance. Our scheme excludes the limitation of low difraction efciency and laser input intensity when an acousto-optic modulator is applied to shift the laser frequency from the resonance. We show the stabilization of a strong 795- nm laser detuned up to 550 MHz from the 87Rb 5S1/2 F=2→5P1/2F'=2 transition. The locking range can be modifed by controlling the bufer gas pressure. A laser line width of 2 MHz is achieved over 10 min.
