Numerical analysis for the free-boundary current reversal equilibrium in the AC plasma current operation in a tokamak

In recent decades, tokamak discharges with zero total toroidal current have been reported in tokamak experiments, and this is one of the key problems in alternating current(AC) operations.An efficient free-boundary equilibrium code is developed to investigate such advanced tokamak discharges with current reversal equilibrium configuration. The calculation results show that the reversal current equilibrium can maintain finite pressure and also has considerable effects on the position of the X-point and the magnetic separatrix shape, and hence also on the position of the strike point on the divertor plates, which is extremely useful for magnetic design, MHD stability analysis, and experimental data analysis etc. for the AC plasma current operation on tokamaks.

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping（2D-VRH） model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.

The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.

MHD Equilibrium with Reversed Current Density and Magnetic Islands Revisited:the Vacuum Vector Potential Calculus

The solution of Grad-Shafranov equation determines the stationary behavior of fusion plasma inside a tokamak. To solve the equation it is necessary to know the toroidal current density profile. Recent works show that it is possible to determine a magnetohydrodynamic （MHD） equilibrium with reversed current density （RCD） profiles that presents magnetic islands. In this work we show analytical MHD equilibrium with a RCD profile and analyze the structure of the vacuum vector potential associated with these equilibria using the virtual casing principle.

Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the electrical properties,anisotropic preferred etching by means of optical microscopy,Fourier transform infrared spectroscopy and transmission electron microscopy.It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration.Furtherly,we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode.It is shown that the oxygen precipitations present in an "S" curve with increasing initial oxygen concentration after high temperature diffusion.The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF),which are mainly dislocations,and a small amount of rod stacking faults.The density of B-OSF increases with the increasing initial oxygen concentration.The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.

Current bifurcation, reversals and multiple mobility transitions of dipole in alternating electric fields

Anomalous transports of dipole in alternating electric fields are investigated by means of numerical calculation of its average angular velocity(or current). Our results show that the alternating electric fields can make the dipole exhibit many interesting transport behaviors. There exist current bifurcation and multiple current reversal phenomena about frequency of the alternating electric fields in the system in the absence of constant bias force, while many platforms appear in the curve of its average angular velocity vs. the force, i.e., multiple mobility transitions phenomenon in the presence of the constant force, dependent on frequencies of the alternating electric fields. Further investigation indicates that the multiple mobility transitions are attributed to the traveling forces on the dipole. Intrinsic physical mechanism and conditions for the characteristic dynamical behaviors to occur are also discussed in detail. These findings will possess crucial significance for optimizing heating control in the alternating electric fields.

NiO/β-Ga_(2)O_(3)heterojunction diodes with ultra-low leakage current below 10^(-10)A and high thermostability

The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a high breakdown voltage of 465 V,a specific on-resistance(Ron,sp)of 3.39 mΩ·cm^(2),and a turn-on voltage(V on)of 1.85 V,yielding a static Baliga's figure of merit(FOM)of 256 MW/cm^(2).Also,the HJDs have a low turn-on voltage,which reduces conduction loss dramatically,and a rectification ratio of up to 108.Meanwhile,the HJDs'reverse leakage current is essentially unaffected at temperatures below 170?C,and their leakage level may be controlled below 10^(-10)A.This indicates that p-NiO/β-Ga_(2)O_(3)HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performanceβ-Ga_(2)O_(3)power devices.

High-temperature current conduction through three kinds of Schottky diodes

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I-V-T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.

Effect of Rare Earth on Microstructure and Corrosion Resistance of Pulse Reversal Current Electrodeposition Ni-Co Alloy Coatings

The effect of adding RE to plating bath on microstructure and corrosion resistance of Ni-Co alloy coatings prepared by pulse reversal current electrodeposition was studied by means of SEM/EDS, electrochemical analysis and corrosion mass loss etc. The results show that adding proper RE to plating solution can promote the microstructure of coatings compacter, the surface smoother and the crystal finer, and improve the corrosion resistance. The coatings exhibite the highest corrosion resistance when the concentration of RE reaches 0.25 g·L -1. The reason of increasing corrosion resistance by adding RE was also investigated.

Axial Shock in a Cylindrical Plasma with Current

Hugoniot relations of a two-dimensional axial shock with current and magnetic field in a cylindrical shock tube were investigated by a numerical method. The radial profiles of the magnetic field, electric current, pressures, flow velocities and temperatures between the up- and down-stream radial force-balanced plasma of the shock were revealed by numerical analysis. It is clearly found that the axial shock can lead to two effects： one is an inverse skin effect （i.e., the current density rises towards the center of the conductor）, the another is a reversed current effect which occurs near the edge and about a half radius. It is also found that the radial gradient of pressure, density and temperature all become very large near the center due to the axial shock.

A Modified Lattice Model of the Reversible Effect of Axial Strain on the Critical Current of Polycrystalline REBa2Cu3O7-δ Films

The strain effect on the critical current is one of the most important properties for polycrystalline YBa2 Cu3O7-δ （REBCO, RE： rare earth） films, in which the reversible effect is intrinsic in the range of strain 0 and the irreversible strain εirr. By introducing the applied strain, a modified grain boundaries （GBs） in the REBCO film is developed. lattice model combining the strain and misorientation of A good agreement of the calculation on the lattice model with the experimental data shows that the lattice model is able to well describe the reversible effect of axial strain on the critical current of the REBCO film, and provides a good understanding of the mechanism of the reversible effect of the strain. Moreover, the effects of the crystallographic texture of the REBCO film and the residual strain εr on the variation of the critical current with the applied strain are extensively investigated. Furthermore by using the developed lattice model, the irreversible strain εirr of the REBCO film can be theoretically determined by comparing the calculation of the critical current-strain curve with the experimental data.

Junction barrier Schottky rectifier with an improved P-well region

A junction barrier Schottky （JBS） rectifier with an improved P-well on 4H-SiC is proposed to improve the VF-IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3 × 10-s times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P＋ grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit （FOM） of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge （ESD） in the human body model （HBM） circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier.

Characterization and corrosion property of nano-rod-like HA on fluoride coating supported on Mg-Zn-Ca alloy×

The poor corrosion resistance of biodegradable magnesium alloys is the dominant factor that limits theirclinical application. In this study, to deal with this challenge, fluoride coating was prepared on MgeZneCa alloy as the inner coating and then hydroxyapatite (HA) coating as the outer coating was depositedon fluoride coating by pulse reverse current electrodeposition (PRC-HA/MgF2). As a comparative study,the microstructure and corrosion properties of the composite coating with the outer coating fabricatedby traditional constant current electrodeposition (TED-HA/MgF2) were also investigated. Scanningelectron microscopy (SEM) images of the coatings show that the morphology of PRC-HA/MgF2 coating isdense and uniform, and presents nano-rod-like structure. Compared with that of TED-HA/MgF2, thecorrosion current density of Mg alloy coated with PRC-HA/MgF2 coatings decreases from 5.72× 10^-5 A/cm2 to 4.32× 10^-7 A/cm^2, and the corrosion resistance increases by almost two orders of magnitude. Inimmersion tests, samples coated with PRC-HA/MgF2 coating always show the lowest hydrogen evolutionamount, and could induce deposition of the hexagonal structure-apatite on the surface rapidly. Theresults show that the corrosion resistance and the bioactivity of the coatings have been improved byadopting double-pulse current mode in the process of preparing HA on fluoride coating, and the PRC-HA/MgF2 coating is worth of further investigation.

Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

With an n-A1GaN （4 nm）/GaN （4 nm） superlattice （SL） inserted between an n-GaN and an InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEDs has been improved. When the injection current is lower than 100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL. However, as the injection current increases more than 100 mA, the lumen efficiency of the LED with an n-A1GaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency. The improvement of the efficiency droop of LEDs with n-AIGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities. The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA, and the electro-static discharge （ESD） pass yield of an LED at human body mode （HBM）-ESD impulses of 2000 V increases from 60% to 90%.

Influence of temperature on tunneling-enhanced recombination in Si based p–i–n photodiodes

We investigate the dominant dark current transport mechanism in Si based p-i-n photodiodes, namely, BPW 21R, SFH 205FA and BPX 61 photodiodes in the temperature range of 350 to 139 K. The forward current- voltage characteristics of these photodiodes are explained via the tunneling enhanced recombination model, which gives a quantitative description of the electronic mechanism in the p-i-n junction photodiodes. The observed tem- perature dependence of the saturation current and the diode ideality factor of these devices agree well with theo- retical predictions; the analysis also indicates the importance of doping for enhancement of tunneling. The present study will be helpful in applying the devices at low temperature ambience.

Resistive switching characteristic of electrolyte-oxide-semiconductor structures

The resistive switching characteristic of SiO2 thin film in electrolyte-oxide-semiconductor （EOS） struc- tures under certain bias voltage is reported. To analyze the mechanism of the resistive switching characteristic, a batch olEOS structures were fabricated under various conditions and their electrical properties were measured with a set of three-electrode systems. A theoretical model based on the formation and rupture of conductive filaments in the oxide layer is proposed to reveal the mechanism of the resistive switching characteristic, followed by an experimental investigation of Auger electron spectroscopy （AES） and secondary ion mass spectroscopy （SIMS） to verify the proposed theoretical model. It is found that different threshold voltage, reverse leakage current and slope value features of the switching I-V characteristic can be observed in different EOS structures with different elec- trolyte solutions as well as different SiO2 layers made by different fabrication processes or in different thicknesses. With a simple fabrication process and significant resistive switching characteristic, the EOS structures show great potential for chemical/biochemical applications.

Rotation-translation coupling of a double-headed Brownian motor in a traveling-wave potential

Considering a double-headed Brownian motor moving with both translational and rotational degrees of freedom,we investigate the directed transport properties of the system in a traveling-wave potential.It is found that the traveling wave provides the essential condition of the directed transport for the system,and at an appropriate angular frequency,the positive current can be optimized.A general current reversal appears by modulating the angular frequency of the traveling wave,noise intensity,external driving force and the rod length.By transforming the dynamical equation in traveling-wave potential into that in a tilted potential,the mechanism of current reversal is analyzed.For both cases of Gaussian and Lévy noises,the currents show similar dependence on the parameters.Moreover,the current in the tilted potential shows a typical stochastic resonance effect.The external driving force has also a resonance-like effect on the current in the tilted potential.But the current in the traveling-wave potential exhibits the reverse behaviors of that in the tilted potential.Besides,the currents obviously depend on the stability index of the Lévy noise under certain conditions.