An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band ...An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274096,61204043,61306042,61306045,and 61306132)the Guangdong Natural Science Foundation,China(Grant Nos.S2012010010533 and S2013040016878)+2 种基金the Shenzhen Science&Technology Foundation,China(Grant No.ZDSY20120618161735041)the Fundamental Research Project of the Shenzhen Science&Technology Foundation,China(Grant Nos.JCYJ20120618162600041,JCYJ20120618162526384,JCYJ20130402164725025,and JCYJ20120618162946025)the International Collaboration Project of the Shenzhen Science&Technology Foundation,China(Grant Nos.GJHZ20120618162120759,GJHZ20130417170946221,GJHZ20130417170908049,and GJHZ20120615142829482)
文摘An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.