The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.展开更多
Two-dimensional DC and small-signal analysis of gate-to-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of gate...Two-dimensional DC and small-signal analysis of gate-to-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of gate-to-source distance can improve device performance, i.e. enhancing drain current, transconductance, and maximum oscillation frequency. This is associated with the peculiar dynamic of electrons in SiC MESFETs, which lead to a linear velocity regime in the source access region. The variations of gate-to-source capacitance, gate-to-drain capacitance, and cut-off frequency with respect to the change in gate-to-source length have also been studied in detail.展开更多
基金Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021+1 种基金the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092the Qing Lan Project
文摘The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.
基金This work was supported by the Major State Basic Research Development Program of China, under Contract 51327010101.
文摘Two-dimensional DC and small-signal analysis of gate-to-source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of gate-to-source distance can improve device performance, i.e. enhancing drain current, transconductance, and maximum oscillation frequency. This is associated with the peculiar dynamic of electrons in SiC MESFETs, which lead to a linear velocity regime in the source access region. The variations of gate-to-source capacitance, gate-to-drain capacitance, and cut-off frequency with respect to the change in gate-to-source length have also been studied in detail.
