A Deep Learning Method to Process Scattered Field Data in Biomedical Imaging System

This paper proposed a deep-learning-based method to process the scattered field data of transmitting antenna,which is unmeasurable in inverse scattering system because the transmitting and receiving antennas are multiplexed.A U-net convolutional neural network(CNN)is used to recover the scattered field data of each transmitting antenna.The numerical results proved that the proposed method can complete the scattered field data at the transmitting antenna which is unable to measure in the actual experiment and can also eliminate the reconstructed error caused by the loss of scattered field data.

Ultrasonic Scattered Field Distribution of One and Two Cylindrical Solids with Phased Array Technique

The scattered fields of plane waves in a solid from a cylinder or sphere are critical in determining its acoustic characteristics as well as in engineering applications. This paper investigates the scattered field distributions of different incident waves created by elastic cylinders embedded in an elastic isotropic medium. Scattered waves, including longitudinal and transverse waves both inside and outside the cylinder, are described with specific modalities under an incident plane wave. A model with a scatterer embedded in a structural steel matrix and filled with aluminum is developed for comparison with the theoretical solution. The frequency of the plane wave ranged from 235 kHz to 2348 kHz, which corresponds to scaling factors from 0.5 to 5. Scattered field distributions in matrix materials blocked by an elastic cylindrical solid have been obtained by simulation or calculated using existing parameters. The simulation results are in good agreement with the theoretical solution, which supports the correctness of the simulation analysis. Furthermore, ultrasonic phased arrays are used to study scattered fields by changing the characteristics of the incident wave. On this foundation, a partial preliminary study of the scattered field distribution of double cylinders in a solid has been carried out, and the scattered field distribution at a given distance has been found to exhibit particular behaviors at different moments. Further studies on directivities and scattered fields are expected to improve the quantification of scattered images in isotropic solid materials by the phased array technique.

A new deep-reading look-ahead method in electromagnetic loggingwhile-drilling using the scattered electric field from magnetic dipole antennas

This paper presents a new deep-reading logging-while-drilling electromagnetic(EM)logging method to detect bed boundaries ahead of bit.Unlike all existing EM logging approaches,the new method is based on the scattered electric field radiated by a magnetic dipole antenna.By analyzing the characteristics of electric tensor responses in layered formations,optimal look-ahead electric component is selected.The selected scattered field contributes to a large portion of the total field and is strongly sensitive to the boundary position.The measured voltage from the scattered electric component can be tens of times larger than that from the scattered magnetic fields and it attenuates slower.Thus,the detection capability improves significantly.A coaxial open-loop half-circle antenna is then proposed to measure the electric field in logging while drilling environment.A practical tool implementation equipped with two tilted close-loop antennas and two open-loop antennas is further developed for look-ahead application.Numerical results demonstrate that the detection depth of the new look-ahead tool can be up to 40 m under favorable conditions.Compared with current look-ahead logging tools,the new method not only significantly shortens the tool size,but also can recognize the boundary position and azimuth.

Characteristic analysis of scattering field in two-layer media by Green's function

The problem of three-dimensional(3D) acoustic scattering in a complex medium has aroused considerable interest of researchers for many years. An ultrasonic scattered field calculating technique is proposed to study the scattering echo from strongly scattered materials in a two-layer medium in this work. Firstly, with the high frequency stationary phase method,the Green's function of two-layer fluid media is derived. And then based on the idea of integral equation discretization,the Green's function method is extended to two-layer fluid media to derive the scattering field expression of defects in a complex medium. With this method, the scattering field of 3D defect in a two-layer medium is calculated and the characteristics of received echoes are studied. The results show that this method is able to solve the scattering P wave field of 3D defect with arbitrary shape at any scattering intensity in two-layer media. Considering the circumstance of waterimmersion ultrasonic non-destructive test(NDT), the scattering sound field characteristics of different types of defects are analyzed by simulation, which will help to optimize the detection scheme and corresponding imaging method in practice so as to improve the detection quality.

SCATTERING FAR FIELD SOLUTION OF SH-WAVE BY MOVABLE RIGID CYLINDRICAL INTERFACE INCLUSION

The Green's function is used to solve the scattering far fieldsolution of SH-wave by a mov- able rigid cylindrical interfaceinclusion in a linear elastic body. First, a suitable Green'sfunction is devel- oped, which is the fundamental displacementsolution of an elastic half space with a movable rigid half-cylin-drical inclusion impacted by out-of-plane harmonic line source loadedat any point of its horizontal surface.

Difference scattering field properties between periodic defect particles and three-dimensional slightly rough optical surface

Based on the practical situation of nondestructive examination, the calculation model of the composite scattering is established by using a three-dimensional half-space finite difference time domain, and the Monte Carlo method is used to solve the problem of the optical surface with roughness in the proposed scheme. Moreover, the defect particles are observed as periodic particles for a more complex situation. In order to obtain the scattering contribution of defects inside the optical surface, a difference radar cross section is added into the model to analyze the selected calculations on the effects of numbers, separation distances, different depths and different materials of defects. The effects of different incident angles are also discussed. The numerical results are analyzed in detail to demonstrate the best position to find the defects in the optical surface by detecting in steps of a fixed degree for the incident angle.

Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures （~ 100 K）. Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is inves- tigated. The polarization Coulomb field （PCF） scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin A1N barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors(HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–voltage characteristics of the prepared devices with different Schottky areas, it is found that after processing the device, the polarization Coulomb field(PCF) scattering is induced and has an important influence on the two-dimensional electron gas electron mobility.Moreover, the influence of PCF scattering on the electron mobility is enhanced by reducing the AlGaN barrier thickness.This leads to the quite different variation of the electron mobility with gate bias when compared with the AlGaN barrier thickness. This mainly happens because the thinner AlGaN barrier layer suffers from a much stronger electrical field when applying a gate bias, which gives rise to a stronger converse piezoelectric effect.

Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas （2DEG） electron mobility in the gate–drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.

Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

We simulate the current-voltage （I-V） characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate lengths using the quasi-two-dimensional （quasi-2D） model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas （213EG） with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_(0.18) Al_(0.82) N/AlN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.

Hardening of Thermal Photons Through Inverse Compton Scattering in Strong Magnetic Fields

A new spectrum function is obtained by use of the Compton scattering cross section in the laboratory frame derived earlier. This spectrum function, besides some modifications in the coefficients of the resonant term, contains also a non-resonant term which is inversely proportional to the square of the magnetic field. Based on this spectrum function, the hardening of thermal photons through inverse Compton scattering by relativistic electron beams on the surface of a strongly magnetized neutron star is investigated. Two new features are found. First, there is a maximum scattered photon energy for a given resonant scattering, beyond which resonance disappears. This maximum depends on the electron energy and the magnetic field, but is independent of the incident photon energy. Second, beyond each resonant scattering, there is a high-energy tail, resulting from non-resonant scattering. It is also found that all the tails have a common upper limit which is the highest scattered photon energy for the given incident photon and electron energies. These two new features are absent in the Monte Carlo simulations and therefore, may have physical implications for y-ray emissions.

Surface edge element method for 3-D electromagnetic computation

A surface edge element method is proposed and implemented in the study ofelectromagnetic scattering fields of general targets. The basis functions for surfaces of arbitraryshape are derived according to the geometrical properties of each triangular patch. The proposedbasis functions are 3-D linear functions and the tangential components of the vectors are continuousas the traditional edge element method. Combined field integral equations (CFIE) that include bothelectrical field and magnetic field integral equations are used to model the electromagneticscattering of general dielectric targets. Special treatment for singularity is presented to enhancethe quality of numerical solutions. The proposed method is used to compute the scattering fieldsfrom various targets. Numerical results obtained by the proposed method are validated by resultsfrom other numerical methods.

Proton loss of inner radiation belt during geomagnetic storm of 2018 based on CSES satellite observation

The proton distribution in inner radiation belt is often affected by strong geomagnetic storm disturbance.Based on the data of the sun-synchronous CSES satellite,which carries with several high energy particle payloads and was launched in February 2018,we analyzed the extensive proton variations in the inner radiation belt in a wide energy range of 2 MeV-220 MeV during 2018 major geomagnetic storm.The result indicates that the loss mechanism of protons was energy dependence which is consistent with some previous studies.For protons at low energy 2 MeV-20 MeV,the fluxes were decreased during main phase of the storm and did not come back quickly during the recovery phase,which is likely to be caused by Coulomb collision due to neutral atmosphere density variation.At higher energy 30 MeV-100 MeV,it was confirmed that the magnetic field line curvature scattering plays a significant role in the proton loss phenomenon during this storm.At highest energies>100 MeV,the fluxes of protons kept a stable level and did not exhibit a significant loss during this storm.

The microwave scattering characteristics of sea ice in the Bohai Sea

Microwave remote sensing has become the primary means for sea-ice research, and has been supported by a great deal of field experiments and theoretical studies regarding sea-ice microwave scattering. However, these studies have been barely carried in the Bohai Sea. The sea-ice microwave scattering mechanism was first developed for the thin sea ice with slight roughness in the Bohai Sea in the winter of 2012, and included the backscattering coefficients which were measured on the different conditions of three bands（L, C and X）, two polarizations（HH and VV）, and incident angles of 20° to 60°, using a ground-based scatterometer and the synchronous physical parameters of the sea-ice temperature, density, thickness, salinity, and so on. The theoretical model of the sea-ice electromagnetic scattering is obtained based on these physical parameters. The research regarding the sea-ice microwave scattering mechanism is carried out through two means, which includes the comparison between the field microwave scattering data and the simulation results of the theoretical model, as well as the feature analysis of the four components of the sea-ice electromagnetic scattering. It is revealed that the sea-ice microwave scattering data and the theoretical simulation results vary in the same trend with the incident angles. Also, there is a visible variant in the sensitivity of every component to the different bands.For example, the C and X bands are sensitive to the top surface, the X band is sensitive to the scatterers, and the L and C bands are sensitive to the bottom surface, and so on. It is suggested that the features of the sea-ice surfaces and scatterers can be retrieved by the further research in the future. This experiment can provide an experimental and theoretical foundation for research regarding the sea-ice microwave scattering characteristics in the Bohai Sea.

Seismoelectric waves in a borehole excited by an external explosive source

The conversion of energy between seismic and electromagnetic wave fields has been described by Pride's coupled equations in porous media. In this paper, the seismoelectric field excited by the explosive point source located at the outside of the borehole is studied. The scattering fields inside and outside a borehole are analyzed and deduced under the boundary conditions at the interface between fluid and porous media. The influences of the distance of the point source, multipole components of the eccentric explosive source, and the receiving position along the axis of vertical borehole, on the converted waves inside the borehole are all investigated. When the distance from the acoustic source to the axis of a borehole is far enough, the longitudinal and coseismic longitudinal wave packets dominate the acoustic and electric field, respectively. The three components of both electric field and magnetic field can be detected, and the radial electric field is mainly excited and converted by the dipole component. Owing to the existence of borehole, the electric fields and magnetic fields in the borehole are azimuthal. The distance from the point where the maximum amplitude of the axial components of electric field is recorded, to the origin of coordinate indicates the horizontal distance from the explosive source to the axis of vertical borehole.

Optical responses of metallic plasmonic arrays under the localized excitation

The metallic plasmonic array that can support both propagating surface plasmon polaritons(PSPPs)and localized surface plasmon resonance(LSPR)possesses rich optical properties and remarkable optical performance,making it a powerful platform for applications in photonics,chemistry,and materials.For practical applications,the excitation spot is usually smaller than the area of metal arrays.It is thus imperative to address“how many array units are enough?”towards a rational design of plasmonic nanostructures.Herein,we employed focused ion beam(FIB)to precisely fabricate a series of plasmonic array structures with increased unit number.By utilizing photoluminescence(PL)and surface-enhanced Raman spectroscopy(SERS),we found that the array units outside the excitation spot still have a significant impact on the optical response within the spot.Combined with the numerical simulation,we found that the boundary of the finite array leads to the loss of PSPP outside the excitation point,which subsequently affects the coupling of PSPP and LSPR in the excitation spot,leading to variations in PL and SERS intensity.Based on the findings,we further tuned the LSPR mode of the metal arrays by electrodeposition to obtain strong near-field enhancement without any influence on the PSPP mode.This work advances the understanding of near-field and far-field optical behavior in finite-size array structures and provides guidance for designing highly-efficient photonic devices.

Backward Compton scattering and QED with noncommutative plane in the strong uniform magnetic field

In the strong uniform magnetic field, the noncommutative plane （NCP） caused by the lowest Landau level （LLL） effect, and QED with NCP （QED-NCP） are studied. Being similar to the condensed matter theory of quantum Hall effect, an effective filling factor f（B） is introduced to characterize the possibility that the electrons stay on the LLL. The analytic and numerical results of the differential cross section for the process of backward Compton scattering in accelerator with unpolarized or polarized initial photons are calculated. The existing data of BL38B2 in Spring-8 have been analyzed roughly and compared with the numerical predictions primitively. We propose a precise measurement of the differential cross sections of backward Compton scattering in a strong perpendicular magnetic field, which may reveal the effects of NCP.

The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Based on the measured capacitance–voltage（C–V） curves and current–voltage（I–V） curves for the prepared differently-sized AlN/GaN heterostructure field-effect transistors（HFETs）, the I–V characteristics of the AlN/GaN HFETs were simulated using the quasi-two-dimensional（quasi-2D） model. By analyzing the variation in the electron mobility for the two-dimensional electron gas（2DEG） with the channel electric field, it is found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field（PCF） scattering. The 2DEG electron mobility difference is mostly caused by the PCF scattering which can reach up to 899.6 cm^2/（V·s）（sample a）, 1307.4 cm^2/（V·s）（sample b）,1561.7 cm^2/（V s）（sample c） and 678.1 cm^2/（V·s）（sample d）, respectively. When the 2DEG sheet density is modulated by the drain–source bias, the electron mobility for samples a, b and c appear to peak with the variation of the 2DEG sheet density, but for sample d, no peak appears and the electron mobility rises with the increase in the2 DEG sheet density.