The unbalanced impedance of the asymmetric 3-phase wind power permanent magnet synchronous generator(PMSG)compensated by external circuits in series with the 3-phase windings is investigated in this paper.The asymmetr...The unbalanced impedance of the asymmetric 3-phase wind power permanent magnet synchronous generator(PMSG)compensated by external circuits in series with the 3-phase windings is investigated in this paper.The asymmetric impedance includes the unbalanced resistances,unbalanced self-inductances,and unbalanced mutual inductances.From the perspective of the second harmonic inductances in dq-frame and from the perspective of the second harmonic power,it is theoretically demonstrated that the original asymmetric 3-phase system with asymmetric impedance can be modified to a balanced system by external circuits consisting of resistances and inductances.Therefore,the second harmonic power and DC bus voltage due to the asymmetries can be suppressed naturally without any software modifications.The feasibility of this compensation method is validated by elaborate experiments at different speeds and under different load condition,although the effectiveness might be slightly affected by the non-linearity of the compensation inductance in practice.展开更多
We present a single-event burnout（SEB） hardened planar power MOSFET with partially widened trench sources by three-dimensional（3 D） numerical simulation. The advantage of the proposed structure is that the work of...We present a single-event burnout（SEB） hardened planar power MOSFET with partially widened trench sources by three-dimensional（3 D） numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region（P-well region below the N＋ source）. The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer（LET）,which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to0.7 p C/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.展开更多
文摘The unbalanced impedance of the asymmetric 3-phase wind power permanent magnet synchronous generator(PMSG)compensated by external circuits in series with the 3-phase windings is investigated in this paper.The asymmetric impedance includes the unbalanced resistances,unbalanced self-inductances,and unbalanced mutual inductances.From the perspective of the second harmonic inductances in dq-frame and from the perspective of the second harmonic power,it is theoretically demonstrated that the original asymmetric 3-phase system with asymmetric impedance can be modified to a balanced system by external circuits consisting of resistances and inductances.Therefore,the second harmonic power and DC bus voltage due to the asymmetries can be suppressed naturally without any software modifications.The feasibility of this compensation method is validated by elaborate experiments at different speeds and under different load condition,although the effectiveness might be slightly affected by the non-linearity of the compensation inductance in practice.
基金Project supported by the National Natural Science Foundation of China(Nos.61404161,61404068,61404169)
文摘We present a single-event burnout（SEB） hardened planar power MOSFET with partially widened trench sources by three-dimensional（3 D） numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region（P-well region below the N＋ source）. The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer（LET）,which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to0.7 p C/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.
