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Selection of organic Rankine cycle working fluid based on unit-heat-exchange-area net power 被引量:1
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作者 郭美茹 朱启的 +2 位作者 孙志强 周天 周孑民 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第4期1548-1553,共6页
To improve energy conversion efficiency, optimization of the working fluids in organic Rankine cycles(ORCs) was explored in the range of low-temperature heat sources. The concept of unit-heat-exchange-area(UHEA) net p... To improve energy conversion efficiency, optimization of the working fluids in organic Rankine cycles(ORCs) was explored in the range of low-temperature heat sources. The concept of unit-heat-exchange-area(UHEA) net power, embodying the cost/performance ratio of an ORC system, was proposed as a new indicator to judge the suitability of ORC working fluids on a given condition. The heat exchange area was computed by an improved evaporator model without fixing the minimum temperature difference between working fluid and hot fluid, and the flow pattern transition during heat exchange was also taken into account. The maximum UHEA net powers obtained show that dry organic fluids are more suitable for ORCs than wet organic fluids to recover low-temperature heat. The organic fluid 1-butene is recommended if the inlet temperature of hot fluid is 353.15-363.15 K or443.15-453.15 K, heptane is more suitable at 373.15-423.15 K, and R245 ca is a good option at 483.15-503.15 K. 展开更多
关键词 organic Rankine cycle(ORC) working fluid selection net power heat exchange area
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WCDMA Outdoor Antenna Selection for Dense Urban Areas
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作者 Lu Tongjiu, Sun Huixia, Wanglijun (Mobile Division of ZTE Corporation, Shanghai 201203, China) 《ZTE Communications》 2005年第1期27-29,共3页
Interference control can be realized by selecting the antenna' s electrical and engineering parameters such as gain and radiation pattern, height, azimuth and downtilt to directly influence the field intensity dis... Interference control can be realized by selecting the antenna' s electrical and engineering parameters such as gain and radiation pattern, height, azimuth and downtilt to directly influence the field intensity distribution of radio signals and effectively and reasonably distribute the electro-magnetic energy. This paper discusses how to select an antenna for a densely populated urban area. The discussion is based on the simulation platform of ZTE ' s WCDMA planning system. 展开更多
关键词 WCDMA Outdoor Antenna selection for Dense Urban areas ZTE
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1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE
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作者 邱伟彬 董杰 +1 位作者 王圩 周帆 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第7期681-684,共4页
High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickn... High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm. 展开更多
关键词 spotsize converter self aligned butt joint selective area growth
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Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition 被引量:1
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作者 任鹏 韩刚 +6 位作者 付丙磊 薛斌 张宁 刘喆 赵丽霞 王军喜 李晋闽 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期145-149,共5页
CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposit... CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2:N2 ratio is 1:1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature. 展开更多
关键词 of or IS as RATE GAN Selective area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition by with
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Effect of an escape vent in accordion-shaped traps on the catch and size of Asian paddle crabs Charybdis japonica in an artificial reef area 被引量:2
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作者 张鹏 李超 +1 位作者 李文涛 张秀梅 《Chinese Journal of Oceanology and Limnology》 SCIE CAS CSCD 2016年第6期1238-1246,共9页
Accordion-shaped traps are widely used in China to catch the Asian paddle crab C harybdis japonica but traps of conventional design often catch juvenile crabs. A new type of accordion-shaped trap with an escape vent(L... Accordion-shaped traps are widely used in China to catch the Asian paddle crab C harybdis japonica but traps of conventional design often catch juvenile crabs. A new type of accordion-shaped trap with an escape vent(L×W=4.3 cm×3.0 cm) was designed and a comparative study between the newly designed and conventional traps was performed in the artifi cial reef area of Zhuwang, Laizhou Bay, China from June to August 2012. The mean catch per unit effort(CPUE) of undersized crabs was signifi cantly lower in the vented traps than in the conventional traps(paired t-test, n =30, P <0.001), while the CPUE of marketable crabs was signifi cantly higher in the vented traps(paired t-test, n =30, P <0.001). The mean size of crabs(carapace length) caught in the vented traps was signifi cantly larger than in conventional traps(paired t-test, n =29, P <0.001). The ratio of undersized crabs was 35.05%±2.57% in conventional traps and 12.53%±0.69% in vented traps(signifi cantly lower, paired t-test, n =29, P <0.001). Therefore, a 4.3 cm×3.0 cm escape vent was considered appropriate for C. japonica fi shing in the artifi cial reef area. This fi nding will assist the development of more sustainable and effi cient crab fi shing methods using accordion-shaped traps. 展开更多
关键词 Charybdis japonica accordion-shaped trap escape vent selectivity artificial reef area
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Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology
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作者 周代兵 王会涛 +8 位作者 张瑞康 王宝军 边静 安欣 陆丹 赵玲娟 朱洪亮 吉晨 王圩 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第5期66-68,共3页
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when... A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained. 展开更多
关键词 Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective area Growth Technology EML EAM DFB InGaAs SAG
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A Comparative Study on the Selected Area Electron Diffraction Pattern of Fe Oxide/Au Core-shell Structured Nanoparticles
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作者 Qianghua LU Kailun YAO +3 位作者 Dong XI Zuli LIU Xiaoping LUO Qin NING 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2007年第2期189-192,共4页
The selected area electron diffraction (SAED) pattern of magnetic iron oxide core/gold shell nanoparticles has been studied. For the composite particles with mean size less than 10 nm, their SAED pattern is found to... The selected area electron diffraction (SAED) pattern of magnetic iron oxide core/gold shell nanoparticles has been studied. For the composite particles with mean size less than 10 nm, their SAED pattern is found to be different from either the pattern of pure Fe oxide nanoparticles or that of pure Au particles. Based on the fact that the ring diameters of these composite particles fit the characteristic relation for the fcc structure, the Au atoms on surfaces of the concerned particles are supposed to pack in a way more tightly than they usually do in pure Au nanoparticles. The driving force for this is the coherency strain which enables the shell material at the heterostructured interface to adapt the lattice parameters of the core. 展开更多
关键词 Core-shell structured nanoparticles Magnetic Fe oxide Selected area electron diffraction Biological applications
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Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping
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作者 李士颜 周旭亮 +5 位作者 孔祥挺 李梦珂 米俊萍 边静 王伟 潘教青 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第2期148-151,共4页
A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si(O01) substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposit... A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si(O01) substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution X-ray diffraction. Low temperature photoluminescence (PL) measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates. 展开更多
关键词 Selective area Growth of GaAs in V-Grooved Trenches on Si Substrates by Aspect-Ratio Trapping
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Material manufacturing from atomic layer 被引量:1
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作者 Xinwei Wang Rong Chen Shuhui Sun 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2023年第4期454-460,共7页
Atomic scale engineering of materials and interfaces has become increasingly important in material manufacturing.Atomic layer deposition(ALD)is a technology that can offer many unique properties to achieve atomic-scal... Atomic scale engineering of materials and interfaces has become increasingly important in material manufacturing.Atomic layer deposition(ALD)is a technology that can offer many unique properties to achieve atomic-scale material manufacturing controllability.Herein,we discuss this ALD technology for its applications,attributes,technology status and challenges.We envision that the ALD technology will continue making significant contributions to various industries and technologies in the coming years. 展开更多
关键词 atomic-scale manufacturing atomic layer deposition area selective deposition applications
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Automating selective area electron diffraction phase identification using machine learning
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作者 M.Mika N.Tomczak +2 位作者 C.Finney J.Carter A.Aitkaliyeva 《Journal of Materiomics》 SCIE CSCD 2024年第4期896-905,共10页
Selective area electron diffraction(SAED)patterns can provide valuable insight into the structure of a material.However,the manual identification of collected patterns can be a significant bottleneck in the overall ph... Selective area electron diffraction(SAED)patterns can provide valuable insight into the structure of a material.However,the manual identification of collected patterns can be a significant bottleneck in the overall phase classification workflow.In this work,we utilize the recent advances in computer vision and machine learning(ML)to automate the indexing of SAED patterns.The performance of six different ML algorithms is demonstrated using metallic plutonium-zirconium alloys.The most successful approach trained a neural network(NN)to make a classification of the phase and zone axis,and then utilized a second NN to synthesize multiple independent predictions of different tilts in a single sample to make an overall phase identification.The results demonstrate that automated SAED phase identification using ML is a viable route to accelerate materials characterization. 展开更多
关键词 Selective area electron diffraction Machine learning Phase identification Metallic fuels Pu alloys
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An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter
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作者 侯廉平 王圩 +3 位作者 朱洪亮 周帆 王鲁峰 边静 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第8期1504-1508,共5页
A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymm... A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber. 展开更多
关键词 semiconductor optical amplifier electroabsorption modulator spot-size converters selective area growth quantum well intermixing asymmetric twin waveguide
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A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI
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作者 张靖 李宝霞 +5 位作者 赵玲娟 王保军 周帆 朱洪亮 边静 王圩 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第11期2053-2057,共5页
We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a sin... We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications. 展开更多
关键词 tunable lasers distributed Bragg reflector lasers electroabsorption modulator quantum-well intermi-xing selective area growth
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Determination of Space Group Pncm of Prehnite Using Electron Diffraction Method 被引量:1
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作者 赵文俞 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2002年第4期17-20,共4页
Space symmetry of prehnite, which occurs in cavities and veins within Skarn from the Tieshan iron mineral deposit,Daye,Hubei province,Central China,has been determined using selected area electron diffraction (SAED) a... Space symmetry of prehnite, which occurs in cavities and veins within Skarn from the Tieshan iron mineral deposit,Daye,Hubei province,Central China,has been determined using selected area electron diffraction (SAED) and convergent-beam electron diffraction (CBED) on the submicrometer scale.Our results confirm that the natural prehnite may have the structure with symmetry Pncm.The unit-cell parameters of investigated prehnite (a=0.458nm,b=0.555nm,and c=1.853nm) have been calculated by using the multicrystal diffraction rings of gold,the internal standard. 展开更多
关键词 PREHNITE Pncm selected area electron diffraction convergent-beam electron diffraction
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Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE 被引量:1
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作者 陈伟杰 韩小标 +7 位作者 林佳利 胡国亨 柳铭岗 杨亿斌 陈杰 吴志盛 刘扬 张佰君 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第11期525-529,共5页
Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is pre... Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface. 展开更多
关键词 metal organic vapor phase epitaxy selective area growth migration length
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PRECIPITATION HARDENING OF ELINVAR ALLOY
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作者 LIU Zhiguo CHEN Yong CAO Yanni Nanjing University,Nanjing,ChinaZHU Zhengsheng Shaanxi Iron and Steel Institute,Xi’an,China Professor,Dept.of Physics,Nanjing,University,Nanjing 210008,China 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1991年第1期33-36,共4页
The microstructural evolution and precipitation hardening of an Elinvar alloy doped with Ti and Al during isothermal aging at 700℃ have been investigated by atom probe field ion microscopy and microhardness measureme... The microstructural evolution and precipitation hardening of an Elinvar alloy doped with Ti and Al during isothermal aging at 700℃ have been investigated by atom probe field ion microscopy and microhardness measurements.The γ′ precipiates are spherical and coherent with the matrix.The chemical composition of the precipitates are(Ni_(0.53)Fe_(0.47)_3 (Ti_(0.(?))Al_(0.4)). During aging,a Lifshitz-Wagner type dissolution and coarsening reaction of the precipitates has been observed,The hardness of the material varies with the aging time and reaches maxi- mum when the average diameter of the precipitates was about 11 nm. 展开更多
关键词 Elinvar alloy atom probe field ion microscope γ-phase precipitation hardening atom probe selected area analysis
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Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE
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作者 陈杰 黄溥曼 +6 位作者 韩小标 潘郑州 钟昌明 梁捷智 吴志盛 刘扬 张佰君 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第6期449-453,共5页
Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bo... Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1ī01} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement. 展开更多
关键词 metal-organic-vapor phase epitaxy selective area growth migration length
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A New Orthorhombic Phase of ZrW_(1.6) Mo_(0.4)O_8 at Ambient Pressure
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作者 ZHAO Xin hua WANG Qi MA Hui 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2002年第3期233-236,共4页
Nanocrystallite δ ′ ZrW 1.6 Mo 0.4 O 8 was prepared in the precursor route synthesis. The characterization by means of powder X ray diffraction (XRD) and selected area electron diffraction (SAED) showe... Nanocrystallite δ ′ ZrW 1.6 Mo 0.4 O 8 was prepared in the precursor route synthesis. The characterization by means of powder X ray diffraction (XRD) and selected area electron diffraction (SAED) showed it crystallized in a orthorhombic crystal system with a =0.896 9(7) nm, b =0.701 1(8) nm, c =0.596(1) nm. The possible space group is Pnnm (58) or Pnn2 (34). The compound crystallizes in a metastable phase during the synthesis process depending on temperature and crystallization time. 展开更多
关键词 Precursor route synthesis Powder XRD Selected area electron diffraction
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Area-Specific Positioning of Metallic Glass Nanowires on Si Substrate
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作者 Sumanth Theeda Golden Kumar 《Nanomanufacturing and Metrology》 EI 2023年第3期60-68,共9页
This paper presents a novel technique to fabricate metallic nanowires in selective areas on a Si substrate.Thermoplastic drawing of viscous metallic glass from cavities etched in Si can produce metallic nanowires.The ... This paper presents a novel technique to fabricate metallic nanowires in selective areas on a Si substrate.Thermoplastic drawing of viscous metallic glass from cavities etched in Si can produce metallic nanowires.The length and diameter of nanowires can be controlled by adjusting the drawing conditions without changing the Si mold.A thin metal shadow mask is stacked above the Si mold during thermoplastic drawing to fabricate the nanowires only in specific locations.The mask restricts the flow of metallic glass to predefined shapes on the mask,resulting in the formation of nanowires in selected areas on Si.An Al foil-based mask made by a benchtop vinyl cutter is used to demonstrate the proof-of-concept.Even a simple Al foil mask enables the positioning of metallic nanowires in selective areas as small as 200μm on Si.The precision of the vinyl cutter limits the smallest dimensions of the patterned areas,which can be further improved by using laser-fabricated stencil masks.Results show that a single row of metallic glass nanowires can be patterned on Si using selective thermoplastic drawing.Controllable positioning of metallic nanowires on substrates can enable new applications and characterization techniques for nanostructures. 展开更多
关键词 NANOWIRES Selective area nanopatterning Metallic glass Thermoplastic forming
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Site Fidelity and Residency of Tursiops truncatus off the Aragua Coast,Venezuela-First Records of Long Residency
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作者 S.Cobarrubia-Russo I.Sawyer +1 位作者 M.Gómez-Alceste A.Molero-Lizarraga 《Journal of Marine Science》 2021年第4期46-58,共13页
This study represents the first comprehensive analysis of the residency patterns of a coastal population of bottlenose dolphin off the coast of Aragua,Venezuela,over a multi-year period.Using photo-identification,the ... This study represents the first comprehensive analysis of the residency patterns of a coastal population of bottlenose dolphin off the coast of Aragua,Venezuela,over a multi-year period.Using photo-identification,the most recent study(2019-2020)identified 56 individuals with the time between encounters from one to 344 days between the first and last sighting.Site Fidelity(SF)and Residence(RES)indices were calculated and Agglomerative Hierarchical Clustering(AHC)modeling was performed,with three patterns of residence obtained:resident(25%),semi-resident(17.86%)and transient(57.14%).These results were contrasted with remodeled data from a previous study(2006-2007),showing similar patterns:resident(24.44%),semi-resident(28.89%)and transient(46.67%).Importantly,two individuals were found to have been resident over the extended period.A breeding female sighted for the first time in 2004 and again in 2020(16 years)and the other from 2005 to 2020(15 years).This region is an important area for marine mammals,known to support a resident reproductive population over many years,as well seabirds,sea turtles,whale sharks and fishermen.We recommend that consideration be given to designating the waters as a Marine Protected Area to safeguard the existing population and provide benefit to the surrounding marine environment. 展开更多
关键词 Bottlenose dolphin PHOTO-IDENTIFICATION Residence patterns Agglomerative hierarchical clustering VENEZUELA South Caribbean Marine Protected area(MPA)selection
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White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy 被引量:3
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作者 Guofeng Yang Peng Chen +3 位作者 Shumei Gao Guoqing Chen Rong Zhang Youdou Zheng 《Photonics Research》 SCIE EI 2016年第1期17-20,共4页
Monolithic white-light-emitting diodes(white LEDs) without phosphors are demonstrated using In GaN/GaN multiple quantum wells(MQWs) grown on GaN microrings formed by selective area epitaxy on SiO_2 mask patterns. The... Monolithic white-light-emitting diodes(white LEDs) without phosphors are demonstrated using In GaN/GaN multiple quantum wells(MQWs) grown on GaN microrings formed by selective area epitaxy on SiO_2 mask patterns. The microring structure is composed of {1-101} semi-polar facets and a(0001) c-plane, attributed to favorable surface polarity and surface energy. The white light is realized by combining short and long wavelengths of electroluminescence emissions from In GaN /GaN MQWs on the {1-101} semi-polar facets and the(0001) c-plane,respectively. The change in the emission wavelengths from each microfacet is due to the In composition variations of the MQWs. These results suggest that white emission can possibly be obtained without using phosphors by combining emission light from microstructures. 展开更多
关键词 GaN In LEDS White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy WELL area
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