The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in A1GaN/GaN high electron mobility transistors. The device was measured ever...The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in A1GaN/GaN high electron mobility transistors. The device was measured every 5 rain after the stress was removed. The large-signal parasitic source （drain） resistance, transfer characteristics, threshold voltage, drain-source current, gate-source （drain） reverse currenwvoltage characteristics changed spontaneously after the removal of the stress. The time constant of tile self-changing was about 25 27 rain. The gate-source （drain） capacitance-voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the AIGaN barrier layer when the device was under stress. The traps in the AIGaN barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081)the Beijing Natural Science Foundation(Nos.4132022,4122005)
文摘The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in A1GaN/GaN high electron mobility transistors. The device was measured every 5 rain after the stress was removed. The large-signal parasitic source （drain） resistance, transfer characteristics, threshold voltage, drain-source current, gate-source （drain） reverse currenwvoltage characteristics changed spontaneously after the removal of the stress. The time constant of tile self-changing was about 25 27 rain. The gate-source （drain） capacitance-voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the AIGaN barrier layer when the device was under stress. The traps in the AIGaN barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result.
