Investigation on step overcharge to self-heating behavior and mechanism analysis of lithium ion batteries

To obtain intrinsic overcharge boundary and investigate overcharge mechanism,here we propose an innovative method,the step overcharge test,to reduce the thermal crossover and distinguish the overcharge thermal behavior,including 5%state of charge(SOC)with small current overcharge and resting until the temperature equilibrium under adiabatic conditions.The intrinsic thermal response and the self-excitation behaviour are analysed through temperature and voltage changes during the step overcharge period.Experimental results show that the deintercalated state of the cathode is highly correlated to self-heating parasitic reactions.Before reaching the upper limit of Negative/Positive(N/P)ratio,the temperature changes little,the heat generation is significantly induced by the reversible heat(endothermic)and ohmic heat,which could balance each other.Following that the lithium metal is gradually deposited on the surface of the anode and reacts with electrolyte upon overcharge,inducing selfheating side reaction.However,this spontaneous thermal reaction could be“self-extinguished”.When the lithium in cathode is completely deintercalated,the boundary point of overcharge is about 4.7 V(~148%SOC,>40℃),and from this point,the self-heating behaviour could be continuously triggered until thermal runaway(TR)without additional overcharge.The whole static and spontaneous process lasts for 115 h and the side reaction heat is beyond 320,000 J.The continuous self-excitation behavior inside the battery is attributed to the interaction between the highly oxidized cathode and the solvent,which leads to the dissolution of metal ions.The dissolved metal ions destroy the SEI(solid electrolyte interphase)film on the surface of the deposited Li of anode,which induces the thermal reaction between lithium metal and the solvent.The interaction between cathode,the deposited Li of anode,and solvent promotes the temperature of the battery to rise slowly.When the temperature of the battery reaches more than 60℃,the reaction between lithium metal and solvent is accelerated.After the temperature rises rapidly to the melting point of the separator,it triggers the thermal runaway of the battery due to the short circuit of the battery.

A large-area multi-fingerβ-Ga_(2)O_(3) MOSFET and its self-heating effect

The self-heating effect severely limits device performance and reliability.Although some studies have revealed the heat distribution ofβ-Ga_(2)O_(3) MOSFETs under biases,those devices all have small areas and have difficulty reflecting practical con-ditions.This work demonstrated a multi-fingerβ-Ga_(2)O_(3) MOSFET with a maximum drain current of 0.5 A.Electrical characteris-tics were measured,and the heat dissipation of the device was investigated through infrared images.The relationship between device temperature and time/bias is analyzed.

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.

Self-heating tendency evaluation of sulfide ores based on nonlinear multi-parameters fusion

In order to reveal the nonlinear dynamics characteristics of unsteady self-heating process of sulfide ores, nine different kinds of sulfide ore samples from a pyrite mine in China were taken as experimental materials and their self-heating characteristics were measured in laboratory. Furthermore, the measured temperature was studied by integrating wavelet transform, nonlinear characteristic parameters extraction and fuzzy comprehensive evaluation. The results indicate that only the ore samples 1, 2, 6 and 9 have obvious self-heating phenomenon, and their self-heating initiative temperatures are 220 ℃, 239 ℃, 220 ℃ and 220 ℃, respectively, which means that they are difficult to produce self-heating under normal mining conditions. The correlation dimension of self-heating process is fraction and the maximum Lyapunov exponent is positive, which means that it is feasible to study the self-heating process based on chaotic dynamics theory. The nonlinearities of self-heating process of these four samples （ore samples 1, 2, 6 and 9） are 0.8227, 0.7521, 0.9401 and 0.8827 respectively and the order of the samples according to these results is： sample 6, sample 9, sample 1, sample 2, which is consistent with the measured results of self-heating characteristics. Therefore, the nonlinearity method can be used to evaluate the self-heating tendency of sulfide ores, and it is an effective verification of the reliability of measured results.

Numerical Simulation of the Self-Heating Effect Induced by Electron Beam Plasma in Atmosphere

For exploiting advantages of electron beam air plasma in some unusual applications, a Monte Carlo （MC） model coupled with heat transfer model is established to simulate the characteristics of electron beam air plasma by considering the self-heating effect. Based on the model, the electron beam induced temperature field and the related plasma properties are investigated. The results indicate that a nonuniform temperature field is formed in the electron beam plasma region and the average temperature is of the order of 600 K. Moreover, much larger volume pear-shaped electron beam plasma is produced in hot state rather than in cold state. The beam ranges can, with beam energies of 75 keV and 80 keV, exceed 1.0 m and 1.2 m in air at pressure of 100 torr, respectively. Finally, a well verified formula is obtained for calculating the range of high energy electron beam in atmosphere.

A study of self-heating characteristics of a pyrrhotite-rich sulphide ore stockpile

Original surface chemistry of sulphidesis altered upon contact with air, leading to ''oxidation'', which is accompanied by evolution of heat. The current study reports results of an investigation on extent of exothermicity of an experimental nickel-copper sulphide stockpile that was formed at a mining site in Sudbury, Canada. The ore contained pentlandite and chalcopyrite that are accompanied by a large quantity of pyrrhotite. The self-heating characteristics were recorded by temperature sensors placed inside the stockpile. Ambient conditions such as temperature, humidity, and wind velocity were simultaneously recorded. The inner temperature of the stockpile indicated significant fluctuations due to rapid changes, particularly in the outside temperature. The minimum and maximum temperatures recorded in the outside and inside were 5 and 10.5, 44.3 and 32 ℃, respectively. The self-heating capacity of the sulphide ore stockpile observed represents a mild case compared to that experienced by coals. Possible reasons are discussed.

CFD modelling of Iongwall goaf gas flow to improve gas capture and prevent goaf self-heating

CFD models have been developed to investigate the Iongwall goaf gas flow patternsunder different mining and geological control conditions.The Iongwall goaf wastreated as porous regions and gas flow was modelled as a momentum sink added to themomentum equation.Gas desorption from the caved goaf and destressed coal seamswithin the mining disturbed area was modelled as additional mass sources in the continuityequation.These CFD models were developed according to specific Iongwall layoutsand calibrated against field monitoring data.Two case studies were presented demonstratingthe application of CFD modelling of goaf gas flow characteristics for improved goafgas capture and the reduction of oxygen ingress into the goaf areas for self-heating prevention.Results from the case studies indicate that the optimum goaf drainage strategywould be a combination of shallow (near the face) and deep holes to improve the overalldrainage efficiency and gas purity.For gassy Iongwall faces retreating against the seam dip,it is recommended to conduct cross-measure roof hole drainage targeting the fracturedzones overlying the return corner,rather than high capacity surface goaf drainage deep inthe goaf.

Design and Control of Self-Heat Recuperative Distillation Process for Separation of Close-Boiling Mixtures: n-Butanol and iso-Butanol

In order to explore the advantages of self-heat recuperative distillation(SHRD) process, the design and control of the SHRD process was studied for the separation of n-butanol and iso-butanol mixtures. The economic superiority of SHRD process is presented when a comparison on the total annual cost(TAC) of the conventional distillation process, the vapor recompression distillation process and the SHRD process was made. For the SHRD process, 37.74% and 11.35% savings of TAC can be achieved as compared to the conventional distillation process and vapor recompression distillation process, respectively. The dynamic characteristics of this promising SHRD sequence had been studied, and the dynamic responses demonstrated that 10% changes in both feed flow rate and feed composition can be well handled by the control strategy with dual-temperature control. It is proven that the SHRD system not only can provide economical savings but also can operate normally with good controllability.

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Self-heating effect in amorphous InGaZnO thin-film transistors remains a critical issue that degrades device performance and stability, hindering their wider applications. In this work, pulsed current–voltage analysis has been applied to explore the physics origin of self-heating induced degradation, where Joule heat is shortly accumulated by drain current and dissipated in repeated time cycles as a function of gate bias. Enhanced positive threshold voltage shift is observed at reduced heat dissipation time, higher drain current, and increased gate width. A physical picture of Joule heating assisted charge trapping process has been proposed and then verified with pulsed negative gate bias stressing scheme, which could evidently counteract the self-heating effect through the electric-field assisted detrapping process. As a result, this pulsed gate bias scheme with negative quiescent voltage could be used as a possible way to actively suppress self-heating related device degradation.

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this paper.The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited(NSVE)large-signal simulation technique developed by the authors,which is based on the quantum-corrected drift-diffusion(QCDD)model.Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed.Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques,which will be highly useful for optimizing the thermal design of the oscillators.Finally,the simulated results are found to be in close agreement with the experimentally measured data.

Machine Learning-Based Predictions on the Self-Heating Characteristics of Nanocomposites with Hybrid Fillers

A machine learning-based prediction of the self-heating characteristics and the negative temperature coefficient(NTC)effect detection of nanocomposites incorporating carbon nanotube(CNT)and carbon fiber(CF)is proposed.The CNT content was fixed at 4.0 wt.%,and CFs having three different lengths(0.1,3 and 6 mm)at dosage of 1.0 wt.%were added to fabricate the specimens.The self-heating properties of the specimens were evaluated via self-heating tests.Based on the experiment results,two types of artificial neural network(ANN)models were constructed to predict the surface temperature and electrical resistance,and to detect a severe NTC effect.The present predictions were compared with experimental values to verify the applicability of the proposed ANN models.The ANN model for data prediction was able to predict the surface temperature and electrical resistance closely,with corresponding R-squared value of 0.91 and 0.97,respectively.The ANN model for data detection could detect the severe NTC effect occurred in the nanocomposites under the self-heating condition,as evidenced by the accuracy and sensitivity values exceeding 0.7 in all criteria.

A new physics-based self-heating effect model for 4H-SiC MESFETs

A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

Convenient Self-Heating Instant Food Causes Significant Increasing Human Exposure to Organophosphate Esters

The self-heating lunch box(SHLB)is a kind of popular instant food in China,yet little is known about the associated chemical release risk during its heating process.In this study,we investigated organophosphate esters(OPEs)in original unheated food(UF),SHLB-heated processed food(HF)and potential OPE release from SHLB packaging materials.Significantly higher concentrations of OPEs were observed in HF(267±246 ng/g dry weight(dw))than in UF(163±211 ng/g dw)(p<0.001),suggesting an introduction of additional OPEs during heating processes.Tris(2-chloroethyl)phosphate,triethyl phosphate,and tris(2-chloroisopropyl)phosphate exhibited the highest absolute increased amounts,with 137,48.8,and 149%growth in HF than in UF,respectively.Migration testing revealed that packaging materials were rich in OPEs and can release considerable OPEs into food simulates(range,14.7-90.8 ng/g;mean,47.9±21.8).Influencing factors(temperature,contact time,oily food)on OPE migration from packaging materials to food were assessed.Higher temperature and longer contact time increased OPE contents in food simulates.Moreover,the presence of abundant OPEs in UF and significant correlations among different OPEs(p<0.05)suggested contamination happened during food processing and storage.With one SHLB meal a day,a 12-fold increase of OPE intake was observed for humans compared to those following a traditional dietary habit.In the high-exposure(95th percentile)scenario,hazard quotients of nine OPEs ranged from 0.00005 to 0.05.Our results suggested that the SHLB exposure pathway of OPEs should be particularly paid attention to in specific subpopulations that prefer this dietary habit.

A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath p Well

A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.

A review of research on spontaneous combustion of coal

Coal oxidation at low temperatures is the heat source liable for the self-heating and spontaneous combustion of coal. This phenomenon has imposed severe problems in coal related industries. Attempts to understand this phenomenon by previous researchers have provided significant progress. It is wellknown that coal oxidation at low temperatures involves oxygen consumption and formation of gaseous and solid oxidation products. This process is majorly influenced by temperature, oxidation history of coal,coal properties, particle size distribution of the coal, etc. The current understanding of the phenomenon of self-heating and spontaneous combustion of coal is discussed along with the different experimental and numerical models established to predict self-heating characteristics of coal. This paper focuses on the global position of the study carried out by academics, research institutes and industries on spontaneous combustion of coal and coal mine fires. Within this framework, the generally used spontaneous combustion techniques to predict the spontaneous combustion liability of coal were evaluated. These techniques are well-known in their usage, but no specific method has become a standard to predict the spontaneous combustion liability. Further study is still needed to indicate a number of impending issues and to obtain a more complete understanding on the phenomenon.

Fabrication and Simulation of Silicon-on-Insulator Structure with Si_3N_4 as a Buried Insulator

In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3 N4 film as a buried insulator （SOSN） are successfully formed using epitaxial layer transfer technology for the first time. The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile. Experiment results show that the buried Si3 N4 layer is amorphous and the new SOI material has good structural and electrical properties. The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOSN can effectively mitigate the selfheating penalty. The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET.

Influence of organic and inorganic properties of coal-shale on spontaneous combustion liability

Coal and coal-shale undergo low-temperature oxidation when exposed to air,potentially leading to spontaneous combustion.Coal-shale found in association with coal seams vary considerably in their intrinsic properties and spontaneous combustion liability index.Fourteen coal-shale samples collected from four different coal mines in Witbank Coalfield,South Africa,were experimentally investigated.The influence of coal-shale intrinsic properties and spontaneous combustion liability indices(determined by the WitsEhac Index and the Wits-CT Index)were established.The liability indices indicate relationships with the intrinsic factors and thus,identifying the major intrinsic factors affecting liability toward spontaneous combustion in these coal-shale samples.The XRF analysis indicated that the coal-shale samples are rich in Si O2,Al2O3 and Fe2O3,while the XRD showed that same coal-shale samples are generally dominated with kaolinite and quartz.The coal-shale occurred in association with medium Rank C bituminous coal and contained varying proportion of macerals.The Wits-Ehac Index was unable to reliably determine liability indices of some coal-shale samples,and hence the Wits-CT Index was developed.The results obtained from the characterisation tests may be used as a tool to predict the spontaneous combustion liability in carbonaceous material and may serve as a reference when comparing coal-shale from different coal mines.

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.