To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step b...To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.展开更多
A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxi...A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083)the Specialized Research Fund for the Doctoral Program of Higher Education,China(No.200807010010)
文摘To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60806025 and 60976060)in part by the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (Grant No.CXJJ201004)
文摘A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.
