TiOx-based self-rectifying memory device for crossbar WORM memory array applications

Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO_(x)/W structure with self-rectifying property is demonstrated for write-once-read-many-times(WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state(LRS) permanently with a rectification ratio as high as 10^(4) at ±1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiO_(x)/W interface and the Schottky contact at Pt/TiO_(x) interface. The results in this paper demonstrate the potential application of TiO_(x)-based WORM memory device in crossbar arrays.

Artificial synaptic and self-rectifying properties of crystalline(Na_(1-x)K_(x))NbO_(3)thin films grown on Sr_(2)Nb_(3)O_(10)nanosheet seed layers

Crystalline(Na_(1-x)K_(x))NbO_(3)(NKN)thin films were deposited on Sr_(2)Nb_(3)O_(10)/TiN/Si(S-TS)substrates at 370°C.Sr_(2)Nb_(3)O_(10)(SNO)nanosheets served as a template for the formation of crystalline NKN films at low temperatures.When the NKN film was deposited on one SNO monolayer,the NKN memristor exhibited normal bipolar switching characteristics,which could be attributed to the formation and destruction of oxygen vacancy filaments.Moreover,the NKN memristor with one SNO monolayer exhibited artificial synaptic properties.However,the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties,with the two SNO monolayers acting as tunneling barriers in the memristor.The conduction mechanism of the NKN memristor with two SNO monolayers in the highresistance state is attributed to Schottky emission,direct tunneling,and Fowler–Nordheim(FN)tunneling.The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling.Additionally,the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties.Therefore,an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.

Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure

Resistive switching devices with a high self-rectifying ratio are important for achieving the crossbar memristor array that overcomes the sneak current issue.Herein,we demonstrate a single amorphous lithium lanthanum titanium oxide(LLTO)layer based Pt/LLTO/Pt device possessing a self-rectifying ratio higher than 1 × 10^(4) that is comparable to the reported devices with complicated multi-layer stacking structures.Moreover,the device shows forming-free and highly uniform bipolar resistive switching(BRS)characteristic that facilitates the potential applications.The trap-controlled and trap-free space charge limited conductions are demonstrated to dominate the high and low resistance states of the device,respectively.The fast migration of lithium ions under external voltage accelerates the electron injection across the Pt/LLTO interface and also the space charge accumulation in the LLTO layer,and as a result,the high performance of the Pt/LLTO/Pt device was achieved.As demonstrated Pt/LLTO/Pt device sheds a light on the potential applications of the lithium ionic conductors in self-rectifying resistive switching devices.