In order to study the self tempering effect on the solidification of Al-Si alloy, a setup was designed to conduct experiments. The characters of β phases in different thicknesses of Al-Si samples were investigated. T...In order to study the self tempering effect on the solidification of Al-Si alloy, a setup was designed to conduct experiments. The characters of β phases in different thicknesses of Al-Si samples were investigated. The results show that the size distributions of β phases obey the logarithmic normal distribution. The Brinell hardness tests were also carried out. The tested hardness results show that the hardness distribution of the casting cooled in water is evener than that cooled in air, and its averaged value is higher than that cooled in air.展开更多
DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and mea...DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.展开更多
Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. B...Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect（SHE） has a great influence on SOI,extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer.The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET;and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel.This offers a great help to SHE modeling and parameter extraction.展开更多
基金Project (J09LD11) supported by Higher Educational Science and Technology Program of Shandong Province, ChinaProject (BS2009ZZ010) supported by Shandong Province Outstanding Research Award Fund for Young Scientists, China
文摘In order to study the self tempering effect on the solidification of Al-Si alloy, a setup was designed to conduct experiments. The characters of β phases in different thicknesses of Al-Si samples were investigated. The results show that the size distributions of β phases obey the logarithmic normal distribution. The Brinell hardness tests were also carried out. The tested hardness results show that the hardness distribution of the casting cooled in water is evener than that cooled in air, and its averaged value is higher than that cooled in air.
文摘DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.
基金supported by the State Key Development Program for Basic Research of China(No.2006CB3027-01)
文摘Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect（SHE） has a great influence on SOI,extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer.The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET;and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel.This offers a great help to SHE modeling and parameter extraction.
