Semi-on DC stress experiments were conducted on A1GaN/GaN high electron mobility transistors (HEMTs) to find the degradation mechanisms during stress. A positive shift in threshold voltage (VT) and an increase in ...Semi-on DC stress experiments were conducted on A1GaN/GaN high electron mobility transistors (HEMTs) to find the degradation mechanisms during stress. A positive shift in threshold voltage (VT) and an increase in drain series resistance (RD) were observed after semi-on DC stress on the tested HEMTs. It was found that there exists a close correlation between the degree of drain current degradation and the variation in VT and RD. Our analysis shows that the variation in Vx is the main factor leading to the degradation of saturation drain current (IDs), while the increase in RD results in the initial degradation of Ios in linear region in the initial several hours stress time and then the degradation of VT plays more important role. Based on brief analysis, the electron trapping effect induced by gate leakage and the hot electron effect are ascribed to the degradation of drain current during semi-on DC stress. We suggest that electrons in the gate current captured by the traps in the A1GaN layer under the gate metal result in the positive shift in VT and the trapping effect in the gate-drain access region induced by the hot electron effect accounts for the increase in RD.展开更多
三电平双有源混合全桥(hybrid three level full bridge,H-TLFB)DC-DC变换器在双重移相控制下存在回流功率和电流应力较大的问题,为此提出电流应力优化控制和回流功率优化控制两种优化控制策略。首先分析变换器4种工作模态,推导不同模...三电平双有源混合全桥(hybrid three level full bridge,H-TLFB)DC-DC变换器在双重移相控制下存在回流功率和电流应力较大的问题,为此提出电流应力优化控制和回流功率优化控制两种优化控制策略。首先分析变换器4种工作模态,推导不同模态下电流应力、回流功率的表达式,通过对比求解全局内最小电流应力、最小回流功率对应最优移相比,并设计相应优化控制策略。然后基于相同传输功率段将两种优化控制策略进行对比分析,发现两种优化控制策略均可在全功率传输内对变换器进行优化。当1/2<p<2/3时,两种优化控制对电流应力的优化等效,当0<p<1/2时,两种优化控制对回流功率的优化等效。最后通过实验验证了理论分析的有效性和正确性。展开更多
Firstly, relevant stress properties of millisecond level breaking process and microsecond level commutation process of hybrid HVDC circuit breaker are studied in detail on the basis of the analysis for the application...Firstly, relevant stress properties of millisecond level breaking process and microsecond level commutation process of hybrid HVDC circuit breaker are studied in detail on the basis of the analysis for the application environment and topological structure and operating principles of hybrid circuit breakers, and key stress parameters in transient state process of two time dimensions are extracted. The established digital simulation circuit for PSCAD/EMTDC device-level operation of the circuit breaker has verified the stress properties of millisecond level breaking process and microsecond level commutation process. Then, equivalent test method, circuits and parameters based on LC power supply are proposed on the basis of stress extraction. Finally, the results of implemented breaking tests for complete 200 kV circuit breaker, 100 kV and 50 kV circuit breaker units, as well as single power electronic module have verified the accuracy of the simulation circuit and mathematical analysis. The result of this paper can be a guide to electrical structure and test system design of hybrid HVDC circuit breaker.展开更多
针对双有源桥DC-DC(dual active bridge,DAB)变换器中存在较大的电流应力现象,提出一种基于功率补偿的电流应力改进控制方法。通过建立DAB的电流应力、传输功率与相移量之间的函数关系,利用拉格朗日乘数法建立电流应力的优化数学模型,...针对双有源桥DC-DC(dual active bridge,DAB)变换器中存在较大的电流应力现象,提出一种基于功率补偿的电流应力改进控制方法。通过建立DAB的电流应力、传输功率与相移量之间的函数关系,利用拉格朗日乘数法建立电流应力的优化数学模型,从而推导出最优占空比组合,降低电流应力至最小值。通过引入一个虚拟分量对传输功率进行实时补偿控制,以满足系统在输入、输出突变情况下的快速响应能力,提高DAB的动态特性。最后,通过搭建Matlab/Simulink仿真模型进行验证,通过仿真结果表明:基于功率补偿的电流应力优化控制方法的动态响应特性和ZVS特性明显优于传统控制方法,且在减小电流应力的同时也降低了回流功率,进一步验证了优化控制方法的正确性和优越性。展开更多
为应对日益增长的高增益DC-DC转换的需求,如新能源并网、电动汽车应用、航空航天等,利用磁耦合技术设计三绕组耦合电感,结合开关电容结构,提出一种低电压应力三绕组耦合电感高增益DC-DC变换器,其具备电压增益高、元器件电压应力低、多...为应对日益增长的高增益DC-DC转换的需求,如新能源并网、电动汽车应用、航空航天等,利用磁耦合技术设计三绕组耦合电感,结合开关电容结构,提出一种低电压应力三绕组耦合电感高增益DC-DC变换器,其具备电压增益高、元器件电压应力低、多个二极管均具有软开关特性的优点。对该变换器进行模态分析,推导了电压增益公式,获得了各器件的电压和平均电流应力。最后设计了一款120 W的实验样机,实现了386/23.8 V DC-DC的电压转换,验证了理论分析和变换器的可行性。展开更多
基金supported by the National Natural Science Foundation of China(Nos.60406004,60890193,60736033)the National Key Micrometer/Nanometer Processing Lab
文摘Semi-on DC stress experiments were conducted on A1GaN/GaN high electron mobility transistors (HEMTs) to find the degradation mechanisms during stress. A positive shift in threshold voltage (VT) and an increase in drain series resistance (RD) were observed after semi-on DC stress on the tested HEMTs. It was found that there exists a close correlation between the degree of drain current degradation and the variation in VT and RD. Our analysis shows that the variation in Vx is the main factor leading to the degradation of saturation drain current (IDs), while the increase in RD results in the initial degradation of Ios in linear region in the initial several hours stress time and then the degradation of VT plays more important role. Based on brief analysis, the electron trapping effect induced by gate leakage and the hot electron effect are ascribed to the degradation of drain current during semi-on DC stress. We suggest that electrons in the gate current captured by the traps in the A1GaN layer under the gate metal result in the positive shift in VT and the trapping effect in the gate-drain access region induced by the hot electron effect accounts for the increase in RD.
文摘三电平双有源混合全桥(hybrid three level full bridge,H-TLFB)DC-DC变换器在双重移相控制下存在回流功率和电流应力较大的问题,为此提出电流应力优化控制和回流功率优化控制两种优化控制策略。首先分析变换器4种工作模态,推导不同模态下电流应力、回流功率的表达式,通过对比求解全局内最小电流应力、最小回流功率对应最优移相比,并设计相应优化控制策略。然后基于相同传输功率段将两种优化控制策略进行对比分析,发现两种优化控制策略均可在全功率传输内对变换器进行优化。当1/2<p<2/3时,两种优化控制对电流应力的优化等效,当0<p<1/2时,两种优化控制对回流功率的优化等效。最后通过实验验证了理论分析的有效性和正确性。
基金supported by SGCC Scientific and Technological Project(52110116004W)
文摘Firstly, relevant stress properties of millisecond level breaking process and microsecond level commutation process of hybrid HVDC circuit breaker are studied in detail on the basis of the analysis for the application environment and topological structure and operating principles of hybrid circuit breakers, and key stress parameters in transient state process of two time dimensions are extracted. The established digital simulation circuit for PSCAD/EMTDC device-level operation of the circuit breaker has verified the stress properties of millisecond level breaking process and microsecond level commutation process. Then, equivalent test method, circuits and parameters based on LC power supply are proposed on the basis of stress extraction. Finally, the results of implemented breaking tests for complete 200 kV circuit breaker, 100 kV and 50 kV circuit breaker units, as well as single power electronic module have verified the accuracy of the simulation circuit and mathematical analysis. The result of this paper can be a guide to electrical structure and test system design of hybrid HVDC circuit breaker.
文摘针对双有源桥DC-DC(dual active bridge,DAB)变换器中存在较大的电流应力现象,提出一种基于功率补偿的电流应力改进控制方法。通过建立DAB的电流应力、传输功率与相移量之间的函数关系,利用拉格朗日乘数法建立电流应力的优化数学模型,从而推导出最优占空比组合,降低电流应力至最小值。通过引入一个虚拟分量对传输功率进行实时补偿控制,以满足系统在输入、输出突变情况下的快速响应能力,提高DAB的动态特性。最后,通过搭建Matlab/Simulink仿真模型进行验证,通过仿真结果表明:基于功率补偿的电流应力优化控制方法的动态响应特性和ZVS特性明显优于传统控制方法,且在减小电流应力的同时也降低了回流功率,进一步验证了优化控制方法的正确性和优越性。
文摘为应对日益增长的高增益DC-DC转换的需求,如新能源并网、电动汽车应用、航空航天等,利用磁耦合技术设计三绕组耦合电感,结合开关电容结构,提出一种低电压应力三绕组耦合电感高增益DC-DC变换器,其具备电压增益高、元器件电压应力低、多个二极管均具有软开关特性的优点。对该变换器进行模态分析,推导了电压增益公式,获得了各器件的电压和平均电流应力。最后设计了一款120 W的实验样机,实现了386/23.8 V DC-DC的电压转换,验证了理论分析和变换器的可行性。