期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Simulation of Fast-Recovery Cross-Modulation Characteristics in Semiconductor Optical Amplifier with Assist Light
1
作者 Atsushi Matusmoto Kosuke Nishimura +1 位作者 Katsuyuki Utaka Masashi Usami 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期453-454,共2页
We analyzed the characteristics of cross-modulations (XM) and their recovery times in a semiconductor optical amplifier by a newly-developed TMM. The calculated results suggest faster recovery of the XMs by introducin... We analyzed the characteristics of cross-modulations (XM) and their recovery times in a semiconductor optical amplifier by a newly-developed TMM. The calculated results suggest faster recovery of the XMs by introducing a high-power assist light. 展开更多
关键词 simulation of Fast-Recovery Cross-Modulation Characteristics in semiconductor Optical Amplifier with Assist Light as for of XPM SOA in with
原文传递
Dark current modeling of thick perovskite X‑ray detectors
2
作者 Shan Zhao Xinyuan Du +6 位作者 Jincong Pang Haodi Wu Zihao Song Zhiping Zheng Ling Xu Jiang Tang Guangda Niu 《Frontiers of Optoelectronics》 EI CSCD 2022年第4期19-29,共11页
Metal halide perovskites(MHPs)have demonstrated excellent performances in detection of X-rays and gamma-rays.Most studies focus on improving the sensitivity of single-pixel MHP detectors.However,little work pays atten... Metal halide perovskites(MHPs)have demonstrated excellent performances in detection of X-rays and gamma-rays.Most studies focus on improving the sensitivity of single-pixel MHP detectors.However,little work pays attention to the dark current,which is crucial for the back-end circuit integration.Herein,the requirement of dark current is quantitatively evaluated as low as 10^(−9)A/cm^(2)for X-ray imagers integrated on pixel circuits.Moreover,through the semiconductor device analysis and simulation,we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current(J_(T))and the generation-recombination current(J_(g-r)).The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects.This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. 展开更多
关键词 PEROVSKITE X-ray detection Dark current semiconductor simulation Junction device
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部