Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle si...Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle size of semiconductor crystallites from X_ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength diraction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third_order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.展开更多
A series of CdxZn1-xS (x = 0.1-0.9) photocatalysts were prepared by coprecipitation. They could form solid solution semiconductors with hexagonal phase in agreement with pure CdS by characterization of XRD. The photop...A series of CdxZn1-xS (x = 0.1-0.9) photocatalysts were prepared by coprecipitation. They could form solid solution semiconductors with hexagonal phase in agreement with pure CdS by characterization of XRD. The photophysical properties of CdxZn1-xS photocatalysts were measured by UV-Vis diffuse reflectance spectrum and surface photovoltage spectroscopy (SPS). The band gap energy gradually reduced with the increasing of x value in CdxZn1-xS,and when x = 0.7,the Cd0.7Zn0.3S photocatalyst had the strongest sur...展开更多
文摘Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle size of semiconductor crystallites from X_ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength diraction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third_order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.
基金the National High-Tech Research and Development Program of China (No. 2007AA03Z337)the Heilongjiang Science Fund for Distinguished Young Scholars (No. JC200615)the Technical Cooperation Project of Harbin with Russia(No.2006AA4BE053).
文摘A series of CdxZn1-xS (x = 0.1-0.9) photocatalysts were prepared by coprecipitation. They could form solid solution semiconductors with hexagonal phase in agreement with pure CdS by characterization of XRD. The photophysical properties of CdxZn1-xS photocatalysts were measured by UV-Vis diffuse reflectance spectrum and surface photovoltage spectroscopy (SPS). The band gap energy gradually reduced with the increasing of x value in CdxZn1-xS,and when x = 0.7,the Cd0.7Zn0.3S photocatalyst had the strongest sur...
