Metal foil strain gauges remain the state-of-the-art transducers for wind tunnel balances.While strain gauge technology is very mature,piezoresistive semiconductor sensors offer alternatives that are worth exploring t...Metal foil strain gauges remain the state-of-the-art transducers for wind tunnel balances.While strain gauge technology is very mature,piezoresistive semiconductor sensors offer alternatives that are worth exploring to assess their unique benefits,such as better strain resolution and accuracy,which would enable balances to be designed with higher factors to safety and hence longer fatigue lifetimes.A new three-component balance,based on temperature compensated semiconductor strain gauges,is designed,calibrated and tested in a hypersonic low density wind tunnel.The static accuracy of the semiconductor balance is calibrated better than 0.3%FS,and the dynamic accuracy of the balance is established using a HB-2 standard model in a Mach 12 hypersonic flow.Good experimental repeatability is confirmed to be better than 2.5%FS,and the effectiveness of the balance is demonstrated by comparing the forces and moments of measured data with computational fluid dynamics simulations,as well as reference wind tunnel results under similar conditions.展开更多
Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show ...Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V.s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxiai compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.展开更多
We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologicall...We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.展开更多
Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface e...Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.展开更多
Photoluminescence（PL） and Raman spectra under uniaxial strain were measured in mono- and bi-layer MoSe;to comparatively investigate the evolution of excitonic gaps and Raman phonons with strain. We observed that the...Photoluminescence（PL） and Raman spectra under uniaxial strain were measured in mono- and bi-layer MoSe;to comparatively investigate the evolution of excitonic gaps and Raman phonons with strain. We observed that the strain dependence of excitonic gaps shows a nearly linear behavior in both flakes. One percent of strain increase gives a reduction of;2 meV（;5 me V） in A-exciton gap in monolayer（bilayer） MoSe;. The PL width remains little changed in monolayer MoSe;while it increases rapidly with strain in the bilayer case. We have made detailed discussions on the observed strain-modulated results and compared the difference between monolayer and bilayer cases. The hybridization between 4d orbits of Mo and 4p orbits of Se, which is controlled by the Se–Mo–Se bond angle under strain, can be employed to consistently explain the observations. The study may shed light into exciton physics in few-layer MoSe;and provides a basis for their applications.展开更多
sing first-principles calculations based on density functional theory, we systematically study the structural deformation and electronic properties of wurtzite CdX（X = S, Se, Te） bulk and nanowires（NWs） under unia...sing first-principles calculations based on density functional theory, we systematically study the structural deformation and electronic properties of wurtzite CdX（X = S, Se, Te） bulk and nanowires（NWs） under uniaxial [0001] strain. Due to the intrinsic shrinking strain induced by surface contraction, large NWs with {10ˉ10} facets have heavy hole（HH）-like valence band maximum（VBM） states, while NWs with {11ˉ20} facets have crystal hole（CH）-like VBM states. The external uniaxial strain induces an HH–CH band crossing at a critical strain for both bulk and NWs, resulting in nonlinear variations in band gap and hole effective mass at VBM. Unlike the bulk phase, the critical strain of NWs highly depends on the character of the VBM state in the unstrained case, which is closely related to the size and facet of NWs. The critical strain of bulk is at compressive range, while the critical strain of NWs with HH-like and CH-like VBM appears at compressive and tensile strain, respectively. Due to the HH–CH band crossing, the charge distribution of the VBM state in NWs can also be tuned by the external uniaxial strain. Despite the complication of the VBM state, the electron effective mass at conduction band minimum（CBM） of NWs shows a linear relation with the CBM–HH energy difference, the same as the bulk material.展开更多
Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）...Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）. We found that （Ga,Mn）As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the N-Ws. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.展开更多
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor ...Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.展开更多
Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high perfor...Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.展开更多
文摘Metal foil strain gauges remain the state-of-the-art transducers for wind tunnel balances.While strain gauge technology is very mature,piezoresistive semiconductor sensors offer alternatives that are worth exploring to assess their unique benefits,such as better strain resolution and accuracy,which would enable balances to be designed with higher factors to safety and hence longer fatigue lifetimes.A new three-component balance,based on temperature compensated semiconductor strain gauges,is designed,calibrated and tested in a hypersonic low density wind tunnel.The static accuracy of the semiconductor balance is calibrated better than 0.3%FS,and the dynamic accuracy of the balance is established using a HB-2 standard model in a Mach 12 hypersonic flow.Good experimental repeatability is confirmed to be better than 2.5%FS,and the effectiveness of the balance is demonstrated by comparing the forces and moments of measured data with computational fluid dynamics simulations,as well as reference wind tunnel results under similar conditions.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00602)the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-002)
文摘Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V.s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxiai compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.
文摘We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.
基金supported by the National Basic Research Program of China (Grant 2012CB937500)the National Natural Science Foundation of China (Grants 11422219, 11227202, 11372217, 11272232)+1 种基金the Program for New Century Excellent Talents in University (Grant NCET-13)China Scholarship Council (201308120092)
文摘Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.
基金supported by the National Basic Research Program of China(Grant No.2012CB921701)the National Natural Science Foundation of China(Grant Nos.11474357 and 11004245)supported by the Fundamental Research Funds for the Central Universities of China and the Research Funds of Renmin University of China
文摘Photoluminescence（PL） and Raman spectra under uniaxial strain were measured in mono- and bi-layer MoSe;to comparatively investigate the evolution of excitonic gaps and Raman phonons with strain. We observed that the strain dependence of excitonic gaps shows a nearly linear behavior in both flakes. One percent of strain increase gives a reduction of;2 meV（;5 me V） in A-exciton gap in monolayer（bilayer） MoSe;. The PL width remains little changed in monolayer MoSe;while it increases rapidly with strain in the bilayer case. We have made detailed discussions on the observed strain-modulated results and compared the difference between monolayer and bilayer cases. The hybridization between 4d orbits of Mo and 4p orbits of Se, which is controlled by the Se–Mo–Se bond angle under strain, can be employed to consistently explain the observations. The study may shed light into exciton physics in few-layer MoSe;and provides a basis for their applications.
基金supported by the National Natural Science Foundation of China(Grant Nos.11204296 and 61427901)the National Basic Research Program of China(Grant Nos.2014CB643902 and 2013CB933304)
文摘sing first-principles calculations based on density functional theory, we systematically study the structural deformation and electronic properties of wurtzite CdX（X = S, Se, Te） bulk and nanowires（NWs） under uniaxial [0001] strain. Due to the intrinsic shrinking strain induced by surface contraction, large NWs with {10ˉ10} facets have heavy hole（HH）-like valence band maximum（VBM） states, while NWs with {11ˉ20} facets have crystal hole（CH）-like VBM states. The external uniaxial strain induces an HH–CH band crossing at a critical strain for both bulk and NWs, resulting in nonlinear variations in band gap and hole effective mass at VBM. Unlike the bulk phase, the critical strain of NWs highly depends on the character of the VBM state in the unstrained case, which is closely related to the size and facet of NWs. The critical strain of bulk is at compressive range, while the critical strain of NWs with HH-like and CH-like VBM appears at compressive and tensile strain, respectively. Due to the HH–CH band crossing, the charge distribution of the VBM state in NWs can also be tuned by the external uniaxial strain. Despite the complication of the VBM state, the electron effective mass at conduction band minimum（CBM） of NWs shows a linear relation with the CBM–HH energy difference, the same as the bulk material.
基金supported by the National Natural Science Foundation of China(Grant Nos.11004141 and 11174212)the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.11-0351)the Scientific Research Starting Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China
文摘Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）. We found that （Ga,Mn）As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the N-Ws. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.
基金Project supported by the National Defence Pre-research Foundation of China (Grant Nos. 51308040203,9140A08060407DZ0103,and 6139801)
文摘Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.
文摘Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.
