The two-dimensional(2D)Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures.Van der Waals CrCl_(3) monolayer has been experimentally proved to...The two-dimensional(2D)Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures.Van der Waals CrCl_(3) monolayer has been experimentally proved to have an in-plane magnetic easy axis and a low Curie temperature of 17 K,which will limit its application in spintronic devices.In this work,we propose a new Janus monolayer Cr_(2)Cl_(3)S_(3) based on the first principles calculations.The phonon dispersion and elastic constants confirm that Janus monolayer Cr_(2)Cl_(3)S_(3) is dynamically and mechanically stable.Our Monte Carlo simulation results based on magnetic exchange constants reveal that Janus monolayer Cr_(2)Cl_(3)S_(3) is an intrinsic ferromagnetic semiconductor with TC of 180 K,which is much higher than that of CrCl_(3) due to the enhanced ferromagnetic coupling caused by S substitution.Moreover,the magnetic easy axis of Janus Cr_(2)Cl_(3)S_(3) can be tuned to the perpendicular direction with a large magnetic anisotropy energy(MAE)of 142eV/Cr.Furthermore,the effect of biaxial strain on the magnetic property of Janus monolayer Cr_(2)Cl_(3)S_(3) is evaluated.It is found that the Curie temperature is more robust under tensile strain.This work indicates that the Janus monolayer Cr_(2)Cl_(3)S_(3) presents increased Curie temperature and out-of-plane magnetic easy axis,suggesting greater application potential in 2D spintronic devices.展开更多
Two-dimensional(2D)nanomaterials with bipolar magnetism show great promise in spintronic applications.Manipulating carriers'spin-polarized orientation in bipolar magnetic semiconductor(BMS)requires a gate voltage,...Two-dimensional(2D)nanomaterials with bipolar magnetism show great promise in spintronic applications.Manipulating carriers'spin-polarized orientation in bipolar magnetic semiconductor(BMS)requires a gate voltage,but that is volatile.Recently,a new method has been proposed to solve the problem of volatility by introducing a ferroelectric gate with proper band alignment.In this paper,we predict that the PdX_(2)(X=F,Cl,Br,I)monolayers are 2D ferromagnetic BMS with dynamic stability,thermal stability,and mechanical stability by first-principles calculations.The critical temperatures are higher than the boiling point of liquid nitrogen and the BMS characteristics are robust against external strains and electric fields for PdCl_(2) and PdBr_(2).Then,we manipulate the spin-polarization of PdCl_(2) and PdBr_(2) by introducing a ferroelectric gate to enable magnetic half-metal/semiconductor switching and spin-up/down polarization switching control.Two kinds of spin devices(multiferroic memory and spin filter)have been proposed to realize the spin-polarized directions of electrons.These results demonstrate that PdCl_(2) and PdBr_(2) with BMS characters can be widely used as a general material structure for spintronic devices.展开更多
Inspired by the recently predicted 2D MX_(2)Y_(6)(M=metal element;X=Si/Ge/Sn;Y=S/Se/Te),we explore the possible applications of alkaline earth metal(using magnesium as example)in this family based on the idea of eleme...Inspired by the recently predicted 2D MX_(2)Y_(6)(M=metal element;X=Si/Ge/Sn;Y=S/Se/Te),we explore the possible applications of alkaline earth metal(using magnesium as example)in this family based on the idea of element replacement and valence electron balance.Herein,we report a new family of 2D quaternary compounds,namely MgMX_(2)Y_(6)(M=Ti/Zr/Hf;X=Si/Ge;Y=S/Se/Te)monolayers,with superior kinetic,thermodynamic and mechanical stability.In addition,our results indicate that MgMX_(2)Y_(6)monolayers are all indirect band gap semiconductors with band gap values ranging from 0.870 to 2.500 eV.Moreover,the band edges and optical properties of 2D MgMX_(2)Y_(6)are suitable for constructing multifunctional optoelectronic devices.Furthermore,for comparison,the mechanical,electronic and optical properties of In_(2)X_(2)Y_(6)monolayers have been discussed in detail.The success of introducing Mg into the 2D MX_(2)Y_(6)family indicates that more potential materials,such as Caand Sr-based 2D MX_(2)Y_(6)monolayers,may be discovered in the future.Therefore,this work not only broadens the existing family of 2D semiconductors,but it also provides beneficial results for the future.展开更多
β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent toleranc...β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-size β-Ga_(2)O_(3) single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3) are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3) single crystals are summarized and compared in detail.Then,the defects of β-Ga_(2)O_(3) single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3) are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3) single crystals.展开更多
The integration of nano-semiconductors into electromagnetic wave absorption materials is a highly desirable strategy for intensifying dielectric polarization loss;achieving high-attenuation microwave absorption and re...The integration of nano-semiconductors into electromagnetic wave absorption materials is a highly desirable strategy for intensifying dielectric polarization loss;achieving high-attenuation microwave absorption and realizing in-depth comprehension of dielectric loss mechanisms remain challenges.Herein,ultrafine oxygen vacancy-rich Nb_(2)O_(5)semiconductors are confined in carbon nanosheets(ov-Nb_(2)O_(5)/CNS)to boost dielectric polarization and achieve high attenuation.The polarization relaxation,electromagnetic response,and impedance matching of the ov-Nb_(2)O_(5)/CNS are significantly facilitated by the Nb_(2)O_(5)semiconductors with rich oxygen vacancies,which consequently realizes an extremely high attenuation performance of-80.8 dB(>99.999999%wave absorption)at 2.76 mm.As a dielectric polarization center,abundant Nb_(2)O_(5)–carbon heterointerfaces can intensify interfacial polarization loss to strengthen dielectric polarization,and the presence of oxygen vacancies endows Nb_(2)O_(5)semiconductors with abundant charge separation sites to reinforce electric dipole polarization.Moreover,the three-dimensional reconstruction of the absorber using microcomputer tomography technology provides insight into the intensification of the unique lamellar morphology regarding multiple reflection and scattering dissipation characteristics.Additionally,ov-Nb_(2)O_(5)/CNS demonstrates excellent application potential by curing into a microwave-absorbing,machinable,and heat-dissipating plate.This work provides insight into the dielectric polarization loss mechanisms of nano-semiconductor/carbon composites and inspires the design of high-performance microwave absorption materials.展开更多
Using clean solar energy to reduce CO_(2)into value-added products not only consumes the over-emitted CO_(2)that causes environmental problems,but also generates fuel chemicals to alleviate energy crises.The photocata...Using clean solar energy to reduce CO_(2)into value-added products not only consumes the over-emitted CO_(2)that causes environmental problems,but also generates fuel chemicals to alleviate energy crises.The photocatalytic CO_(2)reduction reaction(PCO_(2)RR)relies on the semiconductor photocatalysts that suffer from high recombination rate of the photo-generated carriers,low light harvesting capability,and low stability.This review explores the recent discoveries on the novel semiconductors for PCO_(2)RR,focusing on the rational catalyst design strategies(such as surface engineering,band engineering,hierarchical structure construction,single-atom catalysts,and biohybrid catalysts)that promote the catalytic performance of semiconductor catalysts on PCO_(2)RR.The advanced characterization techniques that contribute to understanding the intrinsic properties of the photocatalysts are also discussed.Lastly,the perspectives on future challenges and possible solutions for PCO_(2)RR are presented.展开更多
基金the National Natural Science Foundation of China(Grant No.12104234)the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20210578,20KJB140004,and JSSCBS20210513)+4 种基金Y Pu acknowledges the National Natural Science Foundation of China(Grant Nos.61874060,U1932159,and 61911530220)Jiangsu Specially-Appointed Professor Program,the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20181388 and 19KJA180007)the Overseas Researcher Innovation Program of Nanjing,NUPTSF(Grant No.NY217118)F Li Acknowledges the Natural Science Fund for Colleges and Universities in Jiangsu Province,China(Grant No.21KJD140005)the National Natural Science Foundation of China(Grant No.12304085).
文摘The two-dimensional(2D)Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures.Van der Waals CrCl_(3) monolayer has been experimentally proved to have an in-plane magnetic easy axis and a low Curie temperature of 17 K,which will limit its application in spintronic devices.In this work,we propose a new Janus monolayer Cr_(2)Cl_(3)S_(3) based on the first principles calculations.The phonon dispersion and elastic constants confirm that Janus monolayer Cr_(2)Cl_(3)S_(3) is dynamically and mechanically stable.Our Monte Carlo simulation results based on magnetic exchange constants reveal that Janus monolayer Cr_(2)Cl_(3)S_(3) is an intrinsic ferromagnetic semiconductor with TC of 180 K,which is much higher than that of CrCl_(3) due to the enhanced ferromagnetic coupling caused by S substitution.Moreover,the magnetic easy axis of Janus Cr_(2)Cl_(3)S_(3) can be tuned to the perpendicular direction with a large magnetic anisotropy energy(MAE)of 142eV/Cr.Furthermore,the effect of biaxial strain on the magnetic property of Janus monolayer Cr_(2)Cl_(3)S_(3) is evaluated.It is found that the Curie temperature is more robust under tensile strain.This work indicates that the Janus monolayer Cr_(2)Cl_(3)S_(3) presents increased Curie temperature and out-of-plane magnetic easy axis,suggesting greater application potential in 2D spintronic devices.
基金Project supported by the Taishan Scholar Program of Shandong Province,China (Grant No.ts20190939)the Independent Cultivation Program of Innovation Team of Jinan City (Grant No.2021GXRC043)+1 种基金the National Natural Science Foundation of China (Grant No.52173283)the Natural Science Foundation of Shandong Province (Grant No.ZR2020QA052)。
文摘Two-dimensional(2D)nanomaterials with bipolar magnetism show great promise in spintronic applications.Manipulating carriers'spin-polarized orientation in bipolar magnetic semiconductor(BMS)requires a gate voltage,but that is volatile.Recently,a new method has been proposed to solve the problem of volatility by introducing a ferroelectric gate with proper band alignment.In this paper,we predict that the PdX_(2)(X=F,Cl,Br,I)monolayers are 2D ferromagnetic BMS with dynamic stability,thermal stability,and mechanical stability by first-principles calculations.The critical temperatures are higher than the boiling point of liquid nitrogen and the BMS characteristics are robust against external strains and electric fields for PdCl_(2) and PdBr_(2).Then,we manipulate the spin-polarization of PdCl_(2) and PdBr_(2) by introducing a ferroelectric gate to enable magnetic half-metal/semiconductor switching and spin-up/down polarization switching control.Two kinds of spin devices(multiferroic memory and spin filter)have been proposed to realize the spin-polarized directions of electrons.These results demonstrate that PdCl_(2) and PdBr_(2) with BMS characters can be widely used as a general material structure for spintronic devices.
基金supported by the National Natural Science Foundation of China (Grant No. 61974049, 62222404 61974050)National Key Research and Development Plan of China (Grant No. 2021YFB3601200)
文摘Inspired by the recently predicted 2D MX_(2)Y_(6)(M=metal element;X=Si/Ge/Sn;Y=S/Se/Te),we explore the possible applications of alkaline earth metal(using magnesium as example)in this family based on the idea of element replacement and valence electron balance.Herein,we report a new family of 2D quaternary compounds,namely MgMX_(2)Y_(6)(M=Ti/Zr/Hf;X=Si/Ge;Y=S/Se/Te)monolayers,with superior kinetic,thermodynamic and mechanical stability.In addition,our results indicate that MgMX_(2)Y_(6)monolayers are all indirect band gap semiconductors with band gap values ranging from 0.870 to 2.500 eV.Moreover,the band edges and optical properties of 2D MgMX_(2)Y_(6)are suitable for constructing multifunctional optoelectronic devices.Furthermore,for comparison,the mechanical,electronic and optical properties of In_(2)X_(2)Y_(6)monolayers have been discussed in detail.The success of introducing Mg into the 2D MX_(2)Y_(6)family indicates that more potential materials,such as Caand Sr-based 2D MX_(2)Y_(6)monolayers,may be discovered in the future.Therefore,this work not only broadens the existing family of 2D semiconductors,but it also provides beneficial results for the future.
文摘β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-size β-Ga_(2)O_(3) single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3) are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3) single crystals are summarized and compared in detail.Then,the defects of β-Ga_(2)O_(3) single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3) are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3) single crystals.
基金supported by National Natural Science Foundation of China(No.22078100,No.52102098,and No.22008073)Fundamental Research Funds for the Central Universities(No.222201718002)。
文摘The integration of nano-semiconductors into electromagnetic wave absorption materials is a highly desirable strategy for intensifying dielectric polarization loss;achieving high-attenuation microwave absorption and realizing in-depth comprehension of dielectric loss mechanisms remain challenges.Herein,ultrafine oxygen vacancy-rich Nb_(2)O_(5)semiconductors are confined in carbon nanosheets(ov-Nb_(2)O_(5)/CNS)to boost dielectric polarization and achieve high attenuation.The polarization relaxation,electromagnetic response,and impedance matching of the ov-Nb_(2)O_(5)/CNS are significantly facilitated by the Nb_(2)O_(5)semiconductors with rich oxygen vacancies,which consequently realizes an extremely high attenuation performance of-80.8 dB(>99.999999%wave absorption)at 2.76 mm.As a dielectric polarization center,abundant Nb_(2)O_(5)–carbon heterointerfaces can intensify interfacial polarization loss to strengthen dielectric polarization,and the presence of oxygen vacancies endows Nb_(2)O_(5)semiconductors with abundant charge separation sites to reinforce electric dipole polarization.Moreover,the three-dimensional reconstruction of the absorber using microcomputer tomography technology provides insight into the intensification of the unique lamellar morphology regarding multiple reflection and scattering dissipation characteristics.Additionally,ov-Nb_(2)O_(5)/CNS demonstrates excellent application potential by curing into a microwave-absorbing,machinable,and heat-dissipating plate.This work provides insight into the dielectric polarization loss mechanisms of nano-semiconductor/carbon composites and inspires the design of high-performance microwave absorption materials.
基金This work was supported by the Natural Sciences and Engineering Research Council of Canada(NSERC)。
文摘Using clean solar energy to reduce CO_(2)into value-added products not only consumes the over-emitted CO_(2)that causes environmental problems,but also generates fuel chemicals to alleviate energy crises.The photocatalytic CO_(2)reduction reaction(PCO_(2)RR)relies on the semiconductor photocatalysts that suffer from high recombination rate of the photo-generated carriers,low light harvesting capability,and low stability.This review explores the recent discoveries on the novel semiconductors for PCO_(2)RR,focusing on the rational catalyst design strategies(such as surface engineering,band engineering,hierarchical structure construction,single-atom catalysts,and biohybrid catalysts)that promote the catalytic performance of semiconductor catalysts on PCO_(2)RR.The advanced characterization techniques that contribute to understanding the intrinsic properties of the photocatalysts are also discussed.Lastly,the perspectives on future challenges and possible solutions for PCO_(2)RR are presented.
