The formula model of the performance of adhesive to the composition was presented and a groupof relative program was designed for assisting to optimise the adhesive formulation. This program canbe used to perform regr...The formula model of the performance of adhesive to the composition was presented and a groupof relative program was designed for assisting to optimise the adhesive formulation. This program canbe used to perform regression analysis for multi - ingredient experiment system to obtain fitting function and to plot the contour and relational curves of the fitting function. The isograms of peel strength,rool tack force and holeing time of SIS PSAs were obtained by the program. The peel strength wasmainlg effected by the content of tackifier and the rolling ball tack force was mainly effected by plasticizer and the holding time by SIS.展开更多
The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Al...The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.展开更多
Lithiation-induced plasticity is a key factor that enables Si electrodes to maintain long cycle life in Li-ion batteries. We study the plasticity of various lithiated sili-con phases based on first-principles calculat...Lithiation-induced plasticity is a key factor that enables Si electrodes to maintain long cycle life in Li-ion batteries. We study the plasticity of various lithiated sili-con phases based on first-principles calculations and iden-tify the linear dependence of the equivalent yield stress on the hydrostatic pressure. Such dependence may cause the compression-tension asymmetry in an amorphous Si thin film electrode from a lithiation to delithiation cycle, and leads to subsequent ratcheting of the electrode after cyclic lithiation. We propose a yield criterion of amorphous lithi-ated silicon that includes the effects of the hydrostatic stress and the lithiation reaction. We further examine the micro-scopic mechanism of deformation in lithiated silicon under mechanical load, which is attributed to the flow-defects mediated local bond switching and cavitation. Hydrostatic compression confines the flow defects thus effectively strength-ens the amorphous structure, and vice versa.展开更多
文摘The formula model of the performance of adhesive to the composition was presented and a groupof relative program was designed for assisting to optimise the adhesive formulation. This program canbe used to perform regression analysis for multi - ingredient experiment system to obtain fitting function and to plot the contour and relational curves of the fitting function. The isograms of peel strength,rool tack force and holeing time of SIS PSAs were obtained by the program. The peel strength wasmainlg effected by the content of tackifier and the rolling ball tack force was mainly effected by plasticizer and the holding time by SIS.
文摘The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.
基金supported by the National Natural Science Foundation of China (11005124 and 11275229)the Natural Science Foundation of Anhui Province (1208085QA05)+1 种基金the National Fund for Scientific Research (FNRS) of Belgium, support by the SEAS Academic Computing teamthe Extreme Science and Engineering Discovery Environment (XSEDE),supported by NSF of US (TG-DMR130025 andTG-DMR130038)
文摘Lithiation-induced plasticity is a key factor that enables Si electrodes to maintain long cycle life in Li-ion batteries. We study the plasticity of various lithiated sili-con phases based on first-principles calculations and iden-tify the linear dependence of the equivalent yield stress on the hydrostatic pressure. Such dependence may cause the compression-tension asymmetry in an amorphous Si thin film electrode from a lithiation to delithiation cycle, and leads to subsequent ratcheting of the electrode after cyclic lithiation. We propose a yield criterion of amorphous lithi-ated silicon that includes the effects of the hydrostatic stress and the lithiation reaction. We further examine the micro-scopic mechanism of deformation in lithiated silicon under mechanical load, which is attributed to the flow-defects mediated local bond switching and cavitation. Hydrostatic compression confines the flow defects thus effectively strength-ens the amorphous structure, and vice versa.
