An integrated front-end vertical CMOS Hall magnetic sensor is proposed for the in-plane magnetic field measure-ment.To improve the magnetic sensitivity and to obtain low offset,a fully symmetric vertical Hall device(F...An integrated front-end vertical CMOS Hall magnetic sensor is proposed for the in-plane magnetic field measure-ment.To improve the magnetic sensitivity and to obtain low offset,a fully symmetric vertical Hall device(FSVHD)has been op-timized with a minimum size design.A new four-phase spinning current modulation associated with a correlated double sampling(CDS)demodulation technique has been further applied to compensate for the offset and also to provide a linear Hall output voltage.The vertical Hall sensor chip has been manufactured in a 0.18μm low-voltage CMOS technology and it occu-pies an area of 1.54 mm2.The experimental results show in the magnetic field range from-200 to 200 mT,the entire vertical Hall sensor performs with the linearity of 99.9%and the system magnetic sensitivity of 1.22 V/T and the residual offset of 60μT.Meanwhile,it consumes 4.5 mW at a 3.3 V supply voltage.The proposed vertical Hall sensor is very suitable for the low-cost sys-tem-on-chip(SOC)implementation of 2D or 3D magnetic microsystems.展开更多
An ultrasensitive metamaterial sensor based on double-slot vertical split ring resonators(DVSRRs) is designed and numerically calculated in the terahertz frequency. This DVSRR design produces a fundament LC resonance ...An ultrasensitive metamaterial sensor based on double-slot vertical split ring resonators(DVSRRs) is designed and numerically calculated in the terahertz frequency. This DVSRR design produces a fundament LC resonance with a quality factor of about 20 when the incidence magnetic field component normal to the DVSRR array. The resonant characteristics and sensing performance of the DVSRR array design are systematically analyzed employing a contrast method among three similar vertical split ring resonator(SRRs) structures. The research results show that the elimination of bianisotropy, induced by the structural symmetry of the DVSRR design, helps to achieve LC resonance of a high quality factor. Lifting the SRRs up from the substrate sharply reduces the dielectric loss introduced by the substrate. All these factors jointly result in superior sensitivity of the DVSRR to the attributes of analytes. The maximum refractive index sensitivity is 788 GHz/RIU or 1.04 × 10~5 nm∕RIU.Also, the DVSRR sensor maintains its superior sensing performance for fabrication tolerance ranging from -4% to 4% and wide range incidence angles up to 50° under both TE and TM illuminations.展开更多
基金the National Natural Science Foundation of China(Nos.61871231,62171233)the Natural Science Foundation of Jiangsu Province,China(No.BK20181390)+1 种基金the Key Research&Development Plan of Jiangsu Province,China(No.BE2019741)the Agricultural Science and Technology Independent Innovation Foundation of Jiangsu Province,China(No.CX(21)3062).
文摘An integrated front-end vertical CMOS Hall magnetic sensor is proposed for the in-plane magnetic field measure-ment.To improve the magnetic sensitivity and to obtain low offset,a fully symmetric vertical Hall device(FSVHD)has been op-timized with a minimum size design.A new four-phase spinning current modulation associated with a correlated double sampling(CDS)demodulation technique has been further applied to compensate for the offset and also to provide a linear Hall output voltage.The vertical Hall sensor chip has been manufactured in a 0.18μm low-voltage CMOS technology and it occu-pies an area of 1.54 mm2.The experimental results show in the magnetic field range from-200 to 200 mT,the entire vertical Hall sensor performs with the linearity of 99.9%and the system magnetic sensitivity of 1.22 V/T and the residual offset of 60μT.Meanwhile,it consumes 4.5 mW at a 3.3 V supply voltage.The proposed vertical Hall sensor is very suitable for the low-cost sys-tem-on-chip(SOC)implementation of 2D or 3D magnetic microsystems.
基金National Natural Science Foundation of China(NSFC)(61327006,61620106014)
文摘An ultrasensitive metamaterial sensor based on double-slot vertical split ring resonators(DVSRRs) is designed and numerically calculated in the terahertz frequency. This DVSRR design produces a fundament LC resonance with a quality factor of about 20 when the incidence magnetic field component normal to the DVSRR array. The resonant characteristics and sensing performance of the DVSRR array design are systematically analyzed employing a contrast method among three similar vertical split ring resonator(SRRs) structures. The research results show that the elimination of bianisotropy, induced by the structural symmetry of the DVSRR design, helps to achieve LC resonance of a high quality factor. Lifting the SRRs up from the substrate sharply reduces the dielectric loss introduced by the substrate. All these factors jointly result in superior sensitivity of the DVSRR to the attributes of analytes. The maximum refractive index sensitivity is 788 GHz/RIU or 1.04 × 10~5 nm∕RIU.Also, the DVSRR sensor maintains its superior sensing performance for fabrication tolerance ranging from -4% to 4% and wide range incidence angles up to 50° under both TE and TM illuminations.