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A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection
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作者 Kun Wang Wenxuan Lai +2 位作者 Zhenyi Ni Deren Yang Xiaodong Pi 《Journal of Semiconductors》 EI CAS CSCD 2024年第8期49-58,共10页
Ratiometric fluorescent detection of iron(Ⅲ)(Fe^(3+))offers inherent self-calibration and contactless analytic capabilities.However,realizing a dual-emission near-infrared(NIR)nanosensor with a low limit of detection... Ratiometric fluorescent detection of iron(Ⅲ)(Fe^(3+))offers inherent self-calibration and contactless analytic capabilities.However,realizing a dual-emission near-infrared(NIR)nanosensor with a low limit of detection(LOD)is rather challenging.In this work,we report the synthesis of water-dispersible erbium-hyperdoped silicon quantum dots(Si QDs:Er),which emit NIR light at the wavelengths of 810 and 1540 nm.A dual-emission NIR nanosensor based on water-dispersible Si QDs:Er enables ratiometric Fe^(3+)detection with a very low LOD(0.06μM).The effects of pH,recyclability,and the interplay between static and dynamic quenching mechanisms for Fe^(3+)detection have been systematically studied.In addition,we demonstrate that the nanosensor may be used to construct a sequential logic circuit with memory functions. 展开更多
关键词 erbium-hyperdoped silicon quantum dots dual-emission near-infrared nanosensor Fe^(3+)detection sequential logic circuit
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Tribotronic triggers and sequential logic circuits 被引量:2
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作者 Li Min Zhang Zhi Wei Yang +3 位作者 Yao Kun Pang Tao Zhou Chi Zhang Zhong Lin Wang 《Nano Research》 SCIE EI CAS CSCD 2017年第10期3534-3542,共9页
In this paper, a floating-gate tribotronic transistor (FGTT) based on a mobile triboelectric layer and a traditional silicon-based field-effect transistor (FET) is proposed. In the FGTT, the triboelectric charges ... In this paper, a floating-gate tribotronic transistor (FGTT) based on a mobile triboelectric layer and a traditional silicon-based field-effect transistor (FET) is proposed. In the FGTT, the triboelectric charges in the layer created by contact electrification can be used to modulate charge carrier transport in the transistor. Based on the FGTTs and FETs, a tribotronic negated AND (NAND) gate that achieves mechanical-electrical coupled inputs, logic operations, and electrical level outputs is fabricated. By further integrating tribotronic NAND gates with traditional digital circuits, several basic units such as the tribotronic S-R trigger, D trigger, and T trigger have been demonstrated. Additionally, tribotronic sequential logic circuits such as registers and counters have also been integrated to enable external contact triggered storage and computation. In contrast to the conventional sequential logic units controlled by electrical signals, contact-triggered tribotronic sequential logic circuits are able to realize direct interaction and integration with the external environment. This development can lead to their potential application in micro/nano-sensors, electromechanical storage, interactive control, and intelligent instrumentation. 展开更多
关键词 tribotronics tribotronic transistor triboelectric nanogenerator TRIGGER sequential logic circuits
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