Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this stu...Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in Zn O-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the Zn O（0001） plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of Zn O,whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally.展开更多
In order to develop a fabric with excellent flame resistance function,antistatic function,moisture absorption and breathability,the polysulfonamide(PSA)fiber and the flame retardant viscose(FRV)fiber were blended.Mean...In order to develop a fabric with excellent flame resistance function,antistatic function,moisture absorption and breathability,the polysulfonamide(PSA)fiber and the flame retardant viscose(FRV)fiber were blended.Meanwhile,the conductive filaments were used as the core yarn,and then they were made into the core-spun yarn and the fabric at different blending ratios of PSA/FRV.The effects of the blending ratio of PSA/FRV on the mechanical properties and the evenness of the yarn were studied.The effects of the blending ratio of PSA/FRV on mechanical properties,flame retardant properties,antistatic properties,moisture permeability and drape of the fabric were analyzed.With the increase of the blending ratios of PSA/FRV,the strength and the elongation of the core-spun yarn increased firstly and then decreased.Moreover,the evenness of the core-spun yarn was improved,the fabric strength increased firstly and then decreased,the flame resistance decreased,and the antistatic performance improved.These results provide an important basis for the preparation and wide application of fabrics made of PSA/FRV/conductive filament.展开更多
We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample str...We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related展开更多
In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the p...In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.展开更多
基金Project supported by the Natural Science Foundation of Hebei Province,China(Grant Nos.A2013205149 and E2013210133)the Hebei Provincial Education Department,China(Grant Nos.ZH2012067 and 2011170)
文摘Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in Zn O-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the Zn O（0001） plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of Zn O,whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally.
基金Open Fund Project of Clothing Engineering Research Center of Zhejiang Province(Zhejiang Sci-Tech University,China)(No.2019FZKF04)Transformation of Scientific and Technological Achievements Programs of Higher Education Institutions in Shanxi Province,China(TSTAP)(No.2020CG014)+2 种基金the MOE(Ministry of Education in China)Project of Humanities and Social Sciences(No.18YJC760051)2017 Shanxi Philosophy and Social Science Project,China(No.201702)Program for the Philosophy and Social Sciences Research(PSSR)of Higher Learning Institutions of Shanxi Province,China(No.201803060)。
文摘In order to develop a fabric with excellent flame resistance function,antistatic function,moisture absorption and breathability,the polysulfonamide(PSA)fiber and the flame retardant viscose(FRV)fiber were blended.Meanwhile,the conductive filaments were used as the core yarn,and then they were made into the core-spun yarn and the fabric at different blending ratios of PSA/FRV.The effects of the blending ratio of PSA/FRV on the mechanical properties and the evenness of the yarn were studied.The effects of the blending ratio of PSA/FRV on mechanical properties,flame retardant properties,antistatic properties,moisture permeability and drape of the fabric were analyzed.With the increase of the blending ratios of PSA/FRV,the strength and the elongation of the core-spun yarn increased firstly and then decreased.Moreover,the evenness of the core-spun yarn was improved,the fabric strength increased firstly and then decreased,the flame resistance decreased,and the antistatic performance improved.These results provide an important basis for the preparation and wide application of fabrics made of PSA/FRV/conductive filament.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61274113 and 11204212)the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064)+1 种基金the Natural Science Foundation of Tianjin City, China (Grant Nos. 10SYSYJC27700, 13JCYBJC15700, and 10ZCKFGX01200)the Science and Technology Development Funds of Universities and Colleges of Tianjin City, China (Grant No. 20100703)
文摘We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related
基金Project supported by the National Natural Science Foundation of China for Excellent Young Scholars(Grant No.51422201)the National Natural Science Foundation of China(Grant Nos.51172041,51372035,11304035,61574031,and 61404026)+4 种基金the National Basic Research Program of China(Grant No.2012CB933703)the"111"Project,China(Grant No.B13013)the Fund from Jilin Province,China(Grant Nos.20140520106JH and 20140201008GX)the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20130043110004)the Fundamental Research Funds for the Central Universities,China(Grant Nos.2412015KJ008 and 2412016KJ003)
文摘In this study, the unipolar resistive switching （URS） and bipolar resistive switching （BRS） are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies （Vo） and metal-Ag conducting filaments （CFs） respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching （RS） characteristics （e.g., forming and switching voltages, reset current and resistance states） between these two modes based on Vo- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
