Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

Effect of gas bubble on cell voltage oscillations based on equivalent circuit simulation in aluminum electrolysis cell

A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.

The Squeezing Effect in a Mesoscopic RLC Circuit

Using the path integral method we derive quantum wave function and quantum fluctuations of charge andcurrent in the mesoscopic RLC circuit. We find that the quantum fluctuation of charge decreases with time, oppositely,the quantum fluctuation of current increases with time monotonously. Therefore there is a squeezing effect in the circuit.If some more charge devices are used in the mesoscopic-damped circuit, the quantum noise can be reduced. We also findthat uncertainty relation of charge and current periodically varies with the period π/2 in the under-damped case.

Quantum Effect in the Mesoscopic RLC Circuits with a Source

The research work on the quantum effects in mesoscopic circuits has undergone a rapid development recently, however the whole quantum theory of the mesoscopic circuits should consider the discreteness of the electric charge. In this paper, based on the fundamental fact that the electric charge takes discrete values, the finite-difference Schrodinger equation of the mesoscopic RLC circuit with a source is achieved. With a unitary transformation, the Schrodinger equation becomes the standard Mathieu equation, then the energy spectrum and the wave functions of the system are obtained. Using the WKBJ method, the average of durrents and square of the current are calculated. The results show the existence of the current fluctuation, which causes noise in the circuits. This paper is an application of the whole quantum mesoscopic circuits theory to the fundamental circuits, and the results will shed light on the design of the miniation circuits, especially on the purpose of reducing quantum noise coherent controlling of the mesoscopic quantum states.

Quantum Effects of Mesoscopic Inductance and Capacity Coupling Circuits

Using the quantum theory for a mesoscopic circuit based on the discretenes of electric charges, the finitedifference Schrodinger equation of the non-dlssipative mesoscopic inductance and capacity coupling circuit is achieved. The Coulomb blockade effect, which is caused by the discreteness of electric charges, is studied. Appropriately choose the components in the circuits, the finlte-dlfference Schrodinger equation can be divided into two Mathieu equations in representation.＂ With the WKBJ method, the currents quantum fluctuations in the ground states of the two circuits are calculated. The results show that the currents quantum zero-point fluctuations of the two circuits are exist and correlated.

Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.

Effect of Valence Band Tail Width on the Open Circuit Voltage of P3HT:PCBM Bulk Heterojunction Solar Cell:AMPS-1D Simulation Study

The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.

Study of Reducing Non-Ideal Effects Based on TiN Sensitive Electrode with Front-End Offset Circuit

The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.

EQUIVALENT CIRCUIT OF NONLINEAR EFFECT OF SPECTRAL IP

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Observation of size-dependent boundary effects in non-Hermitian electric circuits

The non-Hermitian systems with the non-Hermitian skin effect(NHSE)are very sensitive to the imposed boundary conditions and lattice sizes,which lead to size-dependent non-Hermitian skin effects.Here,we report the experimental observation of NHSE with different boundary conditions and different lattice sizes in the unidirectional hopping model based on a circuit platform.The circuit admittance spectra and corresponding eigenstates are very sensitive to the presence of the boundary.Meanwhile,our experimental results show how the lattice sizes and boundary terms together affect the strength of NHSE.Therefore,our electric circuit provides a good platform to observe size-dependent boundary effects in non-Hermitian systems.

The Squeezing Effect in a Mesoscopic RLC Circuit

Using the path integral method we derive quantum wave function and quantum fluctuations of charge andcurrent in the mesoscopic RLC circuit. We find that the quantum fluctuation of charge decreases with time, oppositely,the quantum fluctuation of current increases with time monotonously. Therefore there is a squeezing effect in the circuit.If some more charge devices are used in the mesoscopic-damped circuit, the quantum noise can be reduced. We also findthat uncertainty relation of charge and current periodically varies with the period π/2 in the under-damped case.

Quantum Effect in a Diode Included Nonlinear Inductance-Capacitance Mesoscopic Circuit

The mesoscopic nonlinear inductance-capacitance circuit is a typical anharmonie oscillator, due to diodes included in the circuit. In this paper, using the advanced quantum theory of mesoseopie circuits, which based on the fundamental fact that the electric charge takes discrete value, the diode included mesoscopic circuit is firstly studied. Schrodinger equation of the system is a four-order difference equation in p rep asentation. Using the extended perturbative method, the detail energy spectrum and wave functions axe obtained and verified, as an application of the results, the current quantum fluctuation in the ground state is calculated. Diode is a basis component in a circuit, its quantization would popularize the quantum theory of mesoscopie circuits. The methods to solve the high order difference equation are helpful to the application of mesoscopic quantum theory.

Calculating magnetic shielding effectiveness for high-power dc comparator by magnetic circuit method

Magnetic shielding is very important in the design of a high-power dc comparator. This paper addressed the application of magnetic circuit method to calculate the magnetic shielding effectiveness of high-power dc comparators when an external radial magnetic field is added. The mathematical relationship between the magnetic shielding effectiveness and the parameters of the magnetic shielding body were obtained. To verify the validity of the calculation method, we developped a procedure to measure the magnetic shielding effectiveness of the magnetic body by measuring the induction voltage of the detection winding instead of the magnetic intensity at a point in the magnetic shielding body, making the manipulation much easier. The result calculated with the magnetic circuit method turns out to be closer to the measured one compared with that calculated with a conventional algorithm proposed by Ren, suggesting that the magnetic circuit method is an applicable tool for estimating the toroidal cavity magnetic shielding effectiveness of a heavy current comparator when a radial magnetic field is added.

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts： a link base region under a spacer oxide, an intrinsic transistor region under the emitter window,and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node,which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.

Does the traditional Chinese medicine theory of five circuits and six qi improve treatment effectiveness?A systematic review of randomized controlled trials

Objective:To evaluate whether the traditional Chinese medicine(TCM)theory of five circuits and six qi(FCSQ)is beneficial in terms of improving clinical effectiveness.Methods:Randomized controlled trials(RCTs)evaluating the clinical value of FCSQ theory were reviewed.Multiple databases(China Network Knowledge Infrastructure,Chinese Scienti fic Journals Database,Wanfang Data,SinoMed,Cochrane Library,PubMed,and Embase)weresystematically searched from inception to June 12,2018.Two authors independently extracted the data and performed a methodological quality assessment of the RCTs.RevMan 5.3 software was used for the data analysis.The effect sizes for the primary outcome measures were expressed as relative risks or mean differences with 95%confidence intervals.Results:A total of 13 RCTs were selected,involving 12 types of diseases and 4695 patients.The methodological quality of the RCTs was generally low.Five studies compared the effectiveness of TCM treatments guided by FCSQ theory with conventional TCM therapies,and the remaining eight studies compared the effectiveness of TCM treatments guided by FCSQ theory with biomedical treatments.All of the RCTs reported that the effectiveness of the treatment intervention was better than that of the intervention in the control group.Conclusion:Because of many methodological problems in existing clinical studies,it remains impossible to definitively conclude that FCSQ theory can improve clinical effectiveness.It is difficult to unify the clinical application of FCSQ theory.The feasibility and repeatability of FCSQas an intervention should be given more attention in future clinical research.Future work should also follow international norms for clinical research implementation and reporting to provide high-quality evidence for evaluating the clinical value of FCSQ theory.

OML:an online multi-particle locating method for high-resolution single-event effects studies

Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the high-resolution online trajectory detection for the Hi’Beam-SEE system,which aims to localize SEE-sensitive positions on the IC at the micrometer scale and in real time.We employed a reparameterization method to accelerate the inference speed,merging the branches of the backbone of the location in the deployment scenario.Additionally,we designed an irregular convolution kernel,an attention mechanism,and a fused loss function to improve the positioning accuracy.OML demonstrates exceptional realtime processing capabilities,achieving a positioning accuracy of 1.83μm in processing data generated by the Hi’Beam-SEE system at 163 frames per second per GPU.

Analysis of substrate eddy effects and distribution effects in silicon-based inductor model

The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.

Quantum Fluctuation of a Mesoscopic Inductance Coupling Circuit at Finite Temperature

We study the quantization of mesoscopic inductance coupling circuit and discuss its time evolution. Bymeans of the thermal field dynamics theory we study the quantum fluctuation of the system at finite temperature.

Optimization of reluctance accelerator efficiency by an improved discharging circuit

In this paper,an improved discharging circuit was proposed to quicken the decay of the current in the drive coil in a reluctance accelerator when the armature reaches the center of the coil.The aim of this is to prevent the suck-back effect caused by the residual current in drive coil.The method is adding a reverse charging branch with a small capacitor in the traditional pulsed discharging circuit.The results under the traditional circuit and the improved circuit were compared in a simulation.The experiment then verified the simulations and they had good agreement.Simulation and experiment both demonstrated the improved circuit can effectively prevent the suck-back effect and increase the efficiency.At the voltage of 800 V,an efficiency increase of 36.34% was obtained.

Nonzero Temperature Squeezing of the Time—Dependent Harmonic Oscillator and the Applications to the Capacitive Coupled Electric Circuit

A new way to calculate the nonzero temperature quantum fluctuations of the time-dependent harmonicoscillator is proposed and the properties of squeezing are exactly given. The method is applied to the capacitive coupledelectric circuit. It is explicitly shown that squeezing can appear and the squeezing parameters are related to the physicalquantities of the coupled circuit.