To study the effect of different deposition temperatures on the optical properties of porous SiC films,single crystal Si was used as the substrate,a layer of anodic aluminum oxide(AAO)film was transferred on the Si su...To study the effect of different deposition temperatures on the optical properties of porous SiC films,single crystal Si was used as the substrate,a layer of anodic aluminum oxide(AAO)film was transferred on the Si substrate by chemical method,and then a layer of SiC was deposited on anodic aluminum oxide(AAO)template to prepare porous fluorescent SiC film by magnetron sputtering.The deposition temperature was ranged from 373 to 873 K.The thickness of the porous SiC film coated on the AAO surface was around 283 nm.It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence(PL)intensity excited by 375 nm laser.The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC.With the optimized process,porous amorphous SiC film may have potential applications in the field of warm white LEDs.展开更多
基金Funded by the National Natural Science Foundation of China(No.11747133)the Fundamental Research Funds for the Central Universities(No.195209019)。
文摘To study the effect of different deposition temperatures on the optical properties of porous SiC films,single crystal Si was used as the substrate,a layer of anodic aluminum oxide(AAO)film was transferred on the Si substrate by chemical method,and then a layer of SiC was deposited on anodic aluminum oxide(AAO)template to prepare porous fluorescent SiC film by magnetron sputtering.The deposition temperature was ranged from 373 to 873 K.The thickness of the porous SiC film coated on the AAO surface was around 283 nm.It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence(PL)intensity excited by 375 nm laser.The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC.With the optimized process,porous amorphous SiC film may have potential applications in the field of warm white LEDs.
