Numerical Simulation of PMM Tests for A Ship in Close Proximity to Sidewall and Maneuvering Stability Analysis

As the maneuverability of a ship navigating close to a bank is influenced by the sidewall, the assessment of ship maneuvering stability is important. The hydrodynamic derivatives measured by the planar motion mechanism （PMM） test provide a way to predict the change of ship maneuverability. This paper presents a numerical simulation of PMM model tests with variant distances to a vertical bank by using unsteady RANS equations. A hybrid dynamic mesh technique is developed to realize the mesh configuration and remeshing of dynamic PMM tests when the ship is close to the bank. The proposed method is validated by comparing numerical results with results of PMM tests in a circulating water channel. The first-order hydrodynamic derivatives of the ship are analyzed from the time history of lateral force and yaw moment according to the multiple-run simulating procedure and the variations of hydrodynamic derivatives with the ship-sidewall distance are given. The straight line stability and directional stability are also discussed and stable or unstable zone of proportional-derivative （PD） controller parameters for directional stability is shown, which can be a reference for course keeping operation when sailing near a bank.

Structure Design Considerations of a Sub-50nm Self-Aligned Double-Gate MOSFET

A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.

Experimental study on influence of boundary on location of maximum velocity in open channel flows

The velocity dip phenomenon may occur in a part of or in the whole flow field of open channel flows due to the secondary flow effect. Based on rectangular flume experiments and the laser Doppler velocimetry, the influence of the distance to the sidewall and the aspect ratio on the velocity dip is investigated. Through application of statistical methods to the experimental results, it is proposed that the flow field may be divided into two regions, the relatively strong sidewall region and the relatively weak sidewall region. In the former region, the distance to the sidewall greatly affects the location of maximum velocity, and, in the latter region, both the distance to the sidewall and the aspect ratio influence the location of the maximum velocity.

A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures

Contact exposure is expected to occur in conventional lithography, and can be a source of process deviations （such as shrinking and distortion of templates） during reactive ion etching and inductively coupled plasma etching, as these deviations are induced by ion bombardment. This typically results in undesired sidewall effects, such as lower sidewall angles. Here we report a novel hanging bowlshaped lithography mask that can effectively minimize sidewall effects in lithography applications. As a test case, standard silicon carbide pillars with vertical sidewalls are fabricated using this mask. The mask could be used for fabrication of high-aspect-ratio structures with ultra-violet lithography.

Formation of air-entraining vortices at horizontal intakes without approach flow induced circulation

The aim of this experimental study is to investigate the effects of hydraulic parameters on the formation of air-entraining vortices at horizontal intake structures without approach flow induced circulation. Six intake pipes of different diameters were tested in the study. The intake pipe to be tested was horizontally mounted to the front side of a large reservoir and then for a wide range of discharges experiments were conducted and critical submergences were detected with adjustable approach channel sidewalls. Empirical equations were derived for the dimensionless critical submergence as a function of the relevant dimensionless parameters. Available data is also checked for the possible scale effect. Then, these obtained equations were compared with the similar ones in the literature which showed a quite good agreement.