Preparation and Analysis of Carbon Fiber-Silicon Carbide Thermally Conductive Asphalt Concrete

An experimental investigation into the thermal conductivity of CF-SiC two-phase composite asphalt concrete is presented.The main objective of this study was to verify the possibility of using SiC powder instead of mineral powder as the thermal conductive filler to prepare a new type of asphalt concrete and improve the efficiency of electrothermal snow and ice melting systems accordingly.The thermal conductivity of asphalt concrete prepared with different thermally conductive fillers was tested by a transient plane source method,and the related performances were measured.Then the temperature rise rate and surface temperature were studied through field heating tests.Finally,the actual ice melting efficiency of the thermally conductive asphalt concrete was evaluated using an effective electrothermal system.As shown by the experimental results,the composite made of SiC powder and carbon fiber has a high thermal conductivity.When SiC replaces mineral powder,the thermal conductivity of the asphalt mixture increases first and then decreases with the increase of carbon fiber content.In the present study,in particular,the thermal conductivity attained a peak when the carbon fiber content was 0.2%of the aggregate mass.

Research Progress of Carbon-Silicone Composite Materials

Silicone is a kind of polymer material with high cross-linked structure,which is com-posed by Si-O-Si main chain.Due to the special molecular chain structure,silicone mate-rials are characterized by oxidation resistance,aging resistance,high and low temperature resistance and chemical corrosion resistance.Moreover,silicone materials have process-able properties,simple forming process,good mechanical property,non-toxic and pollution-free.Therefore,silicone has been widely concerned by researchers at home and abroad.In this paper,the main research progress and application directions of carbon-silicone composite at home and abroad in recent years are reviewed.

氧化硼对Al_(2)O_(3)-SiC-C质浇注料力学性能的影响

为了利用氧化硼“间接烧结”特性,进一步提升Al_(2)O_(3)-SiC-C质浇注料的力学性能,以氧化硼(≤0.075 mm)为助烧剂,制备了以FM60莫来石颗粒、致密刚玉、碳化硅、α-Al_(2)O_(3)微粉等为主要原料的浇注料,探究了氧化硼细粉加入量(加入质量分数分别为0、0.2%、0.4%和0.6%)对Al_(2)O_(3)-SiC-C质浇注料结构与性能的影响。结果表明,添加氧化硼细粉会显著提升浇注料的加水量,但其有利于晶须状莫来石的生成,从而加强骨料和基质间的结合强度,试样的力学性能得到明显提升。但当氧化硼细粉加入量提高至0.6%(w)时,试样中莫来石晶须长径比减小,试样的强度降低。综合以上结果,氧化硼最佳加入量为0.4%(w)。

适用于SiC MOSFET的漏源电压积分自适应快速短路保护电路研究

SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同母线电压下的Si C MOSFET短路故障,文中提出一种基于漏源电压积分的自适应快速短路保护方法(drain-sourcevoltageintegration-basedadaptivefast short-circuit protection method,DSVI-AFSCPM),研究所提出的DSVI-AFSCPM在硬开关短路(hardswitchingfault,HSF)和负载短路(fault under load,FUL)条件下的保护性能,进而研究不同母线电压对DSVI-AFSCPM的作用机理。同时,探究Si CMOSFET工作温度对其响应速度的影响。最后,搭建实验平台,对所提出的DSVI-AFSCPM在发生硬开关短路和负载短路时不同母线电压、不同工作温度下的保护性能进行实验测试。实验结果表明,所提出的DSVI-AFSCPM在不同母线电压下具有良好的保护速度自适应性,即母线电压越高,短路保护速度越快,并且其响应速度受Si CMOSFET工作温度影响较小,两种短路工况下工作温度从25℃变化到125℃,短路保护时间变化不超过90 ns。因此,该文为Si CMOSFET在不同母线电压下的可靠使用提供一定技术支撑。

Interfacial design of silicon/carbon anodes for rechargeable batteries:A review

Silicon(Si)has been studied as a promising alloying type anode for lithium-ion batteries due to its high specific capacity,low operating potential and abundant resources.Nevertheless,huge volume expansion during alloying/dealloying processes and low electronic conductivity of Si anodes restrict their electrochemical performance.Thus,carbon(C)materials with special physical and chemical properties are applied in Si anodes to effectively solve these problems.This review focuses on current status in the exploration of Si/C anodes,including the lithiation mechanism and solid electrolyte interface formation,various carbon sources in Si/C anodes,such as traditional carbon sources(graphite,pitch,biomass),and novel carbon sources(MXene,graphene,MOFs-derived carbon,graphdiyne,etc.),as well as interfacial bonding modes of Si and C in the Si/C anodes.Finally,we summarize and prospect the selection of carbonaceous materials,structural design and interface control of Si/C anodes,and application of Si/C anodes in all-solid-state lithium-ion batteries and sodium-ion batteries et al.This review will help researchers in the design of novel Si/C anodes for rechargeable batteries.

Influence of carbon sources on the performance of carbon-coated nano-silicon

Silicon-based material is an important anode material for next-generation lithium-ion batteries.In order to overcome its shortcomings,carbon coating is often employed to improve the electrochemical performance.However,the carbon source,carbon content,and different contact and mixing schemes between carbon sources and silicon are all complex factors and need to be clarified.In this study,nano-silicon is coated by the chemical vapor deposition method using different carbon sources,such as acetylene,methane,propane,and propylene.Carbon content after coating is designed to stay at the same level to reduce the experimental error.Results show the sample with higher conductivity provides higher cycle performance.Propylene is the best choice of the four carbon sources studied in this work.These results indicate that the selection of the carbon source is an important factor that plays a significant role in electrochemical performance.

SiC DC/DC变换器电磁辐射干扰优化

碳化硅SiC(silicon carbide)开关器件具有更快的开关速度与更高的工作频率,被广泛应用于DC/DC变流器。但是SiC器件的高工作频率会产生强烈的电磁辐射干扰,为了优化DC/DC变流器内部结构,实现更高的功率密度,提出一种SiC DC/DC变换器电磁辐射干扰的优化方法。文中首先分析了变流器的电磁辐射干扰源特性,根据DC/DC电路扑拓结构建立了空间电磁辐射模型,然后基于电磁辐射模型和模拟退火算法,对DC/DC变换器元件布局进行低电磁辐射优化,优化后的布局方案减少了60.2%的高频导线长度。最后,进行三维有限元仿真分析进行验证,所提出方法能优化SiC DC/DC变换电路布局,将敏感电路上产生的电场强度降低两个数量级。

采用大芯片的高功率密度SiC功率模块设计

碳化硅SiC(silicon carbide)器件具备耐高压、低损耗和高热导率等优势,对电动汽车行业发展具有重要意义。提出一种利用大芯片封装的SiC MOSFET功率模块设计,并开展实验分析模块的电气性能;搭建仿真对仅有电特性与电特性和温度负反馈结合这2种情况下模块温度进行对比研究。仿真结果表明,在相同工作条件下,采用大芯片封装设计的SiC MOSFET功率模块导通电流能力更强,温度变化更小,电气性能有所提升。

In Situ Formation of LiF-Rich Carbon Interphase on Silicon Particles for Cycle-Stable Battery Anodes

Silicon(Si)is a potential high-capacity anode material for the next-generation lithium-ion battery with high energy density.However,Si anodes suff er from severe interfacial chemistry issues,such as side reactions at the electrode/electrolyte interface,leading to poor electrochemical cycling stability.Herein,we demonstrate the fabrication of a conformal fl uorine-containing carbon(FC)layer on Si particles(Si-FC)and its in situ electrochemical conversion into a LiF-rich carbon layer above 1.5 V(vs.Li^(+)/Li).The as-formed LiF-rich carbon layer not only isolates the active Si and electrolytes,leading to the suppression of side reactions,but also induces the formation of a robust solid-electrolyte interface(SEI),leading to the stable interfacial chemistry of as-designed Si-FC particles.The Si-FC electrode has a high initial Coulombic effi ciency(CE)of 84.8%and a high reversible capacity of 1450 mAh/g at 0.4 C(1000 mA/g)for 300 cycles.In addition,a hybrid electrode consisting of 85 wt%graphite and 15 wt%Si-FC,and mass 2.3 mg/cm^(2) loading delivers a high areal capacity of 2.0 mAh/cm^(2) and a high-capacity retention of 93.2%after 100 cycles,showing the prospects for practical use.

C/SiC复合材料表面SiC过渡层的包埋法制备与性能

[目的]碳/碳化硅(C/SiC)复合材料是航空航天领域最有发展前景的高温热防护结构材料之一,但其表面由于制备过程中化学气相渗透而造成粗糙度低、与涂层间结合强度差的问题有待解决。[方法]以Si粉、C粉和少量Al_(2)O_(3)粉为原料,通过包埋法在C/SiC基体表面制备了SiC涂层。[结果]该涂层与基体之间具有较好的化学亲和性,热膨胀系数匹配度高,表面状态改善情况好。SiC涂层的表面粗糙度(Ra)相较于C/SiC基体实现了从1.732μm到5.531μm超2倍的提升,且涂层与基体结合良好,平均抗拉结合强度达到了4.946 MPa。[结论]该方法处理后的C/SiC复合材料满足了后续制备功能化涂层的要求。

寄生参数对基于常通型SiC JFET器件的中压直流固态断路器过电压的影响及抑制方法

研究了寄生电感对基于常通型碳化硅(silicon carbide,SiC)结型场效应晶体管(junction field effect transistor,JFET)串联结构的中压直流固态断路器(solid state circuit breaker,SSCB)过电压的影响,并在此基础上提出了一种SSCB的过电压抑制方法。首先介绍了基于常通型SiC JFET器件串联结构的SSCB拓扑及工作原理,建立了考虑完整回路寄生电感的SiC JFET串联结构开关过程的数学模型。其次利用MATLAB软件对数学模型进行解析计算,揭示了SSCB开关过程中寄生电感对SiC JFET器件串联运行时过电压的影响机理,并利用PSPICE仿真结果验证了理论分析的正确性。最后设计了一种适用于SSCB过电压抑制的单栅极驱动及缓冲电路,并通过SSCB实验样机验证了所提方法的有效性。

SiC MOSFET驱动特性及器件国产化后的影响分析

碳化硅金属氧化物半导体场效应晶体管SiC MOSFET(silicon carbide metal-oxide-semiconductor field-effect transistor)作为一种新型、广泛应用的开关器件,在实际应用中具有更快的开关速度和更低的器件损耗,可以提高变换器的效率,体现更好的性能。针对SiC MOSFET驱动特性,分析寄生参数对其的影响;搭建双脉冲实验平台,分析栅源电压与SiC MOSFET导通时间的关系;针对现有国产SiC MOSFET存在的不足之处,基于搭建的实验平台及其他电源产品,对SiC MOSFET进行国产化器件替代后导通时间、驱动损耗及负压幅值变化的相关分析。

用后铁沟料加入量对Al_(2)O_(3)-SiC-C质浇注料性能的影响

为提高用后耐火材料的再利用率,以棕刚玉、用后铁沟料、白刚玉、碳化硅、α-Al_(2)O_(3)微粉、SiO_(2)微粉等为主要原料,制备了Al_(2)O_(3)-SiC-C质浇注料。探究了用后铁沟料加入量(加入质量分数分别为0、14%、28%、42%和56%)对浇注料性能的影响。结果表明,随用后铁沟料加入量的增加,浇注料的加水量显著增加,试样经1450℃保温3 h热处理后由膨胀转变为收缩,试样经110℃保温24 h及1450℃保温3 h热处理后的体积密度、常温抗折强度、抗侵蚀性能均呈现下降趋势,但当用后铁沟料加入量不超过28%(w)时,性能下降幅度较小。将用后铁沟料加入量为28%(w)的浇注料用于1080和1350 m3高炉铁沟支沟与渣沟,取得了良好服役效果,主体结构服役周期大于70 d。

SiC MOSFET高温栅氧可靠性研究

碳化硅SiC(silicon carbide)具有优良的电学和热学特性,是一种前景广阔的宽禁带半导体材料。SiC材料制成的功率MOSFET(metal-oxide-semiconductor field-effect transistor)非常适合应用于大功率领域,而高温栅氧可靠性是大功率MOSFET最需要关注的特性之一。通过正压高温栅偏试验和负压高温栅偏试验对比了自研SiC MOSFET和国外同规格SiC MOSFET的高温栅氧可靠性。负压高温栅偏试验结果显示自研SiC MOSFET与国外SiC MOSFET的阈值电压偏移量基本相等,阈值电压偏移量百分比最大相差在4.52%左右。正压高温栅偏试验的结果显示自研SiC MOSFET的阈值电压偏移量较小,与国外SiC MOSFET相比,自研SiC MOSFET的阈值电压偏移量百分比最大相差11%。自研器件占优势的原因是在SiC/SiO2界面处引入了适量的氮元素,钝化界面缺陷的同时,减少了快界面态的产生,使总的界面态密度被降到最低。

SiC MOSFET器件高温下最大电流导通能力评估方法

碳化硅SiC(silicon carbide)器件被认为是一种良好的耐高温半导体器件,高功率密度和高温应用需要更深入地研究损耗和散热问题。研究了SiC MOSFET功率模块在高温下的最大电流导通能力,考虑了电气性能和散热的相互关系。在建立SiC MOSFET器件的热电耦合模型配合系统散热模型的基础上,分析了热失控过程的机理。通过热电联合仿真确定了一款SiC功率模块高温下的电流容量,与实验结果相比误差约为4%,验证了所提方法的有效性。

SiC MOSFET的质子单粒子效应

SiC金属氧化物半导体场效应晶体管(MOSFET)在深空探测领域具有广阔的应用前景,但空间质子引发的单粒子效应(SEE)对航天器稳定运行造成了严重威胁。对平面栅结构与非对称沟槽栅结构的SiC MOSFET进行了能量为70、100与200 MeV的质子辐照实验。实验结果表明,两种SiC MOSFET的单粒子烧毁(SEB)阈值电压均大于额定漏源电压的75%;SEB阈值电压随质子能量升高而降低。对两种器件进行辐照后栅应力测试发现,两种结构的器件由于沟道不同而对栅应力的响应存在差异;不同的质子能量会在栅极引入不同程度的辐射损伤,低能质子更容易在栅氧化层发生碰撞而引入氧化物潜在损伤。该研究可为揭示SiC MOSFET质子SEE机理和评估抗辐射能力提供参考。

SiC激光退火欧姆接触模拟分析及实验研究

实现高可靠性、低电阻欧姆接触是获得高性能SiC功率半导体器件的前提,其直接决定功率器件的能耗水平。激光退火凭借局域化、温升快、控制灵活、精度高、连续能量输出稳定等优点,成为SiC功率器件的新一代主流退火技术。总结了近年来国内外SiC功率器件激光退火研究进展,详细模拟分析了激光退火原理中光热传输特性,设计了355 nm紫外激光退火实验系统,对Ni/SiC进行了激光退火实验,在激光能量密度为2.55 J/cm^(2)条件下,比接触电阻为9.49×10^(-5)Ω·cm^(2)。研究结果对SiC功率器件激光退火欧姆接触性能提升提供了理论和数据支撑。

p-a-SiC:H降低晶体硅异质结太阳能电池寄生损失的研究

使用宽带隙的p型氢化非晶硅碳(p-a-SiC:H)薄膜作为晶体硅异质结(SHJ)太阳能电池的窗口层,使用时域有限差分法(FDTD)模拟证明,p-a-SiC:H不仅能明显降低窗口层的短波寄生吸收损失,而且可以减少SHJ太阳能电池的反射损失,从而增强SHJ太阳能电池的光谱响应。实验结果也证明,使用优化的p-a-SiC:H窗口层可以提升SHJ太阳能电池的短路电流(J_(sc))达1.4 mA/cm^(2),电池光电转化效率达到了21.8%。这主要是由于p-a-SiC:H低的寄生吸收以及使用p-a-SiC:H窗口层降低了SHJ太阳能电池的反射损失所致。

Ash removal from inferior coal via ammonium fluoride roasting and simultaneous yield of white carbon black

The quality upgrading and deashing of inferior coal by chemical method still faces great challenges.The dangers of strong acid,strong alkali,waste water and exhaust gas as well as high cost limit its industrial production.This paper systematically investigates the ash reduction and desilicification of two typical inferior coal utilizing ammonium fluoride roasting method.Under the optimal conditions,for fat coal and gas coal,the deashing rates are 69.02%and 54.13%,and the desilicification rates are 92.64%and 90.27%,respectively.The molar dosage of ammonium fluoride remains consistent for both coals;however,the gas coal,characterized by a lower ash and silica content(less than half that of the fat coal),achieves optimum deashing effect at a reduced time and temperature.The majority of silicon in coal transforms into gaseous ammonium fluorosilicate,subsequently preparing nanoscale amorphous silica with a purity of 99.90%through ammonia precipitation.Most of the fluorine in deashed coal are assigned in inorganic minerals,suggesting the possibility of further fluorine and ash removal via flotation.This research provides a green and facile route to deash inferior coal and produce nano-scale white carbon black simultaneously.

Al_(2)O_(3)-SiC-C质炮泥侵蚀过程热力学计算及抗渣性分析

炮泥抗侵蚀性能不足会导致高炉出铁时间过短或炉前喷溅等问题,而炮泥所处不可视的“黑盒子”类服役环境,使得炮泥的侵蚀过程难以剖析。针对目前炮泥侵蚀过程模糊的问题,采用FactSage热力学软件计算了1450℃时熔渣对Al_(2)O_(3)-SiC-C质炮泥的侵蚀过程,并利用动态抗渣试验分析了熔渣对其侵蚀不同时间后(侵蚀时间分别为0、8、16、24和32 min)的侵蚀情况。结果表明:在渣对炮泥的侵蚀过程中首先形成钙长石侵蚀物相,继而在Al_(2)O_(3)饱和的液相析出Al_(2)O_(3),形成Al_(2)O_(3)隔离层,进一步侵蚀后炮泥和渣在侵蚀界面形成钙铝黄长石,最终形成的侵蚀物相均会完全向液相溶解;抗渣试验结果与热力学计算结果相符,渣对炮泥的侵蚀中生成的液相和低熔点物相降低了炮泥试样的临界强度,从而导致侵蚀速率加快,侵蚀时间为32 min时,炮泥试样被渣完全侵蚀破坏。