Effects of Silicon at Different Concentrations on Morphology and Photosynthetic Physiological Mechanism of Japonica Rice

[Objective] The aim was to explore effects of silicon at different concentrations on morphology and photosynthetic physiological mechanism of japonica rice. [Method] Seedlings of japonica rice were treated with silicon at different concentrations （0, 30, 80, 130 and 180 mg/L of sodium silicate）; silicon contents were measured with Molybdenum blue spectrophotometric method in root, stem and leaf; plant height, root length and number in different treatment groups were measured with tools; chlorophyll a and b, and a/b in leaf and stem of rice in different groups were measured. [Result] Silicon contents in vegetative organs were as follows： stem〉leaf〉 root; when silicon was 80 mg/L, japonica ecotype was shortest; when silicon was 30 mg/L, root length of the rice was shortest and root number was least; when silicon was 30 mg/L, contents of chlorophyll a and b were highest and chlorophyll a/b achieved the peak when silicon was 80 mg/L. [Conclusion] Silicon at proper concen- tration would improve lodging-resistance and efficiency of photosynthesis, further enhancing yield of japonica rice.

A VHF PECVD Micro-Crystalline Silicon Bottom Gate TFT with a Thin Incubation Layer

The incubation layer with amorphous structure between the substrate and crystalline layer may obviously affect the performance for a microcrystalline Si thin film transistor (μc-Si TFT),especially for the bottom gate TFT(BG-TFT).It is found that decreasing the ratio of SiH 4/(H 2+SiH 4) is an effective way to decrease the incubation layer thickness of μc-Si directly deposited by VHF PECVD without any further thermal or laser treatment.Based on the μc-Si with a thin incubation layer,the BG-TFT with Al/SiN x/μc-Si/n+-μc-Si/Al structure is fabricated.The ratio of on-state current to off-state current is up to 106,the mobility is around 0.7cm2/(V·s),and the threshold voltage is about 5V.

The Role of Preliminary Mechanical Activation in the Process of Obtaining Pow-der-Like Ferrosilicium from Metallurgical Slags

Powder iron monosilicide with certain structure exhibits magnetic properties and can be used as an alloying additive in the production of electrical steels and silicon alloys with special physical and chemical properties. From this point of view, development of the energy-saving technology for receiving such a valuable alloying agent with the disposal of secondary waste is an urgent task. For this purpose, the method of joint aluminothermic reduction of preliminary mechanically activated metallurgical waste is offered. Recently, a method for combining the self-propagating high-temperature synthesis and preliminary mechanical activation for obtaining metal powders with certain phase composition and structure is considered as one of the efficient ones. As the initial materials for obtaining iron monosilicide, the waste (or converter) slags of the Alaverdi copper-smelting plant and molybdenum slags of the Yerevan Pure Iron Plant are used. Besides the mentioned slags, NaNO3 and CaO are added. Properties and structure of the received silicide depend on the contents, quantity of components, and the mass relation of two wastes in the burden. Therefore, the processes of structure formation of the iron monosilicide received from metallurgical waste are investigated. Studies have shown that the best results are obtained in case of waste and molybdenum slag relation of 4:1, when the 60-minute grinding in the vibromill leads to a significant increase in the mechanical activation of the burden. At this relation of FeO and SiO2, a condition is created for receiving iron monosilicide showing magnetic properties. On the whole, those transformations lead to a decrease in the reaction activation power of the interacting substances, an increase of the reactivity capacities, as well as to a new original course of reactions and new modified materials.

Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu/SiOxNy/ITO device with SiOxNy deposited in 0.8-sccm O2 flow shows a reliable resistive switching behavior,including good endurance and retention properties.As the conductivity of SiOxNy increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism.The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.