Improving the surface flashover performance of epoxy resin by plasma treatment:a comparison of fluorination and silicon deposition under different modes

This work treats the Al_(2)O_(3)-ER sample surface using dielectric barrier discharge fluorination(DBDF),DBD silicon deposition(DBD-Si),atmospheric-pressure plasma jet fluorination(APPJ-F)and APPJ silicon deposition(APPJ-Si).By comparing the surface morphology,chemical components and electrical parameters,the diverse mechanisms of different plasma modification methods used to improve flashover performance are revealed.The results show that the flashover voltage of the DBDF samples is the largest(increased by 21.2%at most),while the APPJ-F method has the worst promotion effect.The flashover voltage of the APPJ-Si samples decreases sharply when treatment time exceeds 180 s,but the promotion effect outperforms the DBD-Si method during a short modified time.For the mechanism explanation,firstly,plasma fluorination improves the surface roughness and introduces shallow traps by etching the surface and grafting fluorine-containing groups,while plasma silicon deposition reduces the surface roughness and introduces a large number of shallow traps by coating Si Oxfilm.Furthermore,the reaction of the DBD method is more violent,while the homogeneity of the APPJ modification is better.These characteristics influence the effects of fluorination and silicon deposition.Finally,increasing the surface roughness and introducing shallow traps accelerates surface charge dissipation and inhibits flashover,but too many shallow traps greatly increase the dissipated rate and facilitate surface flashover instead.

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

Ag Deposition Forms and Uniformity on Porous Silicon by Electrochemical Method

The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.

Effect of Cumulative Nanosecond Laser Pulses on the Plasma Emission Intensity and Surface Morphology of Pt-and Ag-Ion Deposited Silicon

In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume images produced by each laser shot were captured through a computer controlled image capturing system and analyzed with image-J software. The integrated optical emission intensity of both samples showed an increasing trend with increasing pulses. Agion deposited silicon showed higher optical emission intensity as compared to Pt-ion deposited silicon, suggesting that more damage occurred to the silicon by Ag ions, which was confirmed by SRIM/TRIM simulations. The surface morphologies of both samples were examined by optical microscope showing thermal, exfoliational and hydrodynamical sputtering processes along with the re-deposition of the material, debris and heat affected zones＇ formation. The crater of Ption deposited silicon was deeper but had less lateral damage than Agion deposited silicon. The novel results clearly indicated that the ion deposited silicon surface produced incubation centers, which led to more absorption of incident light resulting into a higher emission intensity from the plasma plume and deeper crater formation as compared to pure silicon. The approach can be effectively utilized in the laser induced breakdown spectroscopy technique, which endures poor limits of detection.

Enhancement of R6G fluorescence by N-type porous silicon deposited with gold nanoparticles

By the electrochemical anodization method,we achieve the single-layer macroporous silicon on the N-type silicon,and prepare gold nanoparticles with sodium citrate reduction method. Through injecting the gold nanoparticles into the porous silicon by immersion,the fluorescence quenching mechanism of porous silicon influenced by gold nanoparticles is analyzed. Then the macroporous silicon deposited with gold nanoparticles is utilized to enhance the fluorescence of rhodamine 6G(R6G). It is found that when the macroporous silicon is deposited with gold nanoparticles for 6 h,the maximum fluorescence enhancement of R6G(about ten times) can be realized. The N-type porous silicon deposited with gold nanoparticles can be an excellent substrate for fluorescence detection.

Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

Influence of the parameters of plasma enhanced chemical vapor deposition （PECVD） on the surface morphology of hydrogenated amorphous silicon （α-Si：H） film was investigated. The root-mean-square （RMS） roughness of the film was measured by atomic force microscope （AFM） and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si：H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency （HF） mode. For high power, however, the surface morphology of the film will deteriorate when the Sill4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be Sill4：25 sccm （standard cubic centimeters per minute）, At： 275 sccm, 10%PH3/N2：2 sccm, HF power： 15 W, pressure： 0.9 Torr and temperature： 350℃. In addition, for in thick fihn deposition on silicon substrate, a N20 and NH3 preprocessing method is proposed to suppress the formation of gas bubbles.

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide （SIC） thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy （AFM）, the Fourier transform infrared absorption （FTIR） and the transmission electron microscopy （TEM）. The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC （approximately 5.4 nm）, and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition （PECVD） on the interfaces and the microstructures of hydrogenated microcrystalline Si （μc-Si：H） thin films are investigated. The plasma ignition condition is modified by varying the ratio of Sill4 to H2 （RH）. For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Ha to Sill＊ （Iuα//SiH＊） at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling RH, the higher IHα/ISiH＊ values are realized. By optimizing the RN modulation, a uniform crystallinity along the growth direction and a denser αc-Si：H film can be obtained. However, an excessively high IRα/ISIH＊ may damage the interface properties, which is indicated by capacitance-voltage （C-V） measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.

Three-dimensional Deposition of Silicon Structure from Silicate Glass with Dispersed Metallie Muminum by Femtosecond Laser Irradiation

We fabricated a silicon structure in silicate glass prepared with metallic aluminum in the starting material, using femtosecond laser irradiation. Small Si-rich structures such as Si clusters were transformed into larger, but still nano-sized, Si particles by laser irradiation. These structures grew to microsize particles due to the thermite reaction promoted by heat treatment. We determined the effect of focused laser pulses on the Si deposition process using the time-resolved transient lens method. Localized high-temperature, high-pressure, and the generation of shock waves appear to be very important in forming the Si-rich structures that ultimately grow into Si particles.

Laser-Plasma Deposition of Silicon Carbonitride Films by the HMDS Vapor Gas Flow Activation after a Laser Beam Focus

A new laser-plasma deposition method has been developed for the plasma chemical deposition of hard silicon carbonitride coatings on stainless steel substrates from the hexamethyldisilazane (HMDS) Si2NH(CH3)6 vapor in a high-speed Ar and Ar + 10 vol.% He gas stream at the HMDS gas flow activation after the laser beam focus. The method allows depositing silicon carbonitride coatings at the rate of 0.4 - 1.2 μm·min-1, i.e. ~2 times higher than that at introducing HMDS in the laser beam focus zone. The properties of the prepared coatings have been studied by the methods of IR and Raman spectroscopy, atomic force microscopy, nanoindentation and X-ray diffraction (XRD) analysis. Studying the film structure with the use of XRD showed that the prepared silicon carbonitride coatings are X-ray amorphous. It has been found that the coating deposition rate and the structure of coatings depend on the process parameters: HMDS flow rate and plasma-generating gas (argon or (Ar + He). The method allows depositing SiCN films at a high speed and a hardness of 20 - 22 GPa.

<100> Textured Diamond Film on Silicon Grown by Hot Filament Chemical Vapor Deposition

The <100> textured growth of diamond film on HF eroded silicon wafer has been studied by HFCVD. The evolution of grain size and sudece morphology vs deposition time is presented and the <100> textured thick diamond film (80μm) with smooth surface, desirable for practical application in many fields is obtained

Geochemical Trace of Silicon Isotopes of Intrusions and Ore Veins Related to Alkali-rich Porphyry Deposits in Western Yunnan, China

Western Yunnan is the well-known polymetallic province in China. It is characterized by copper-gold mineralization related to Cenozoic alkali-rich porphyry. This paper analyzes the silicon isotope data obtained from four typical alkali-rich porphyry deposits based on the dynamic fractionation principle of silicon isotope. The study shows that the ore materials should originate mainly from alkali-rich magmas, together with silicon-rich mineralizing fluids. The process of mineralization was completed by auto-metasomatism, i.e. silicon-rich mineralizing fluids (including alkali-rich porphyry and wall-rock strata) replaced and altered the country rocks and contaminated with crustal rocks during the crystallization of alkali-rich magmas. Such a process is essentially the continuance of the metasomatism of mantle fluids in crust's mineralization. This provides important evidence of silicon isotopic geochemistry for better understanding the mineralization of the Cenozoic alkali-rich porphyry polymetallic deposits

Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon Carbide on Various Materials Surface

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates, such as semiconductor silicon, aluminum and stainless steel. It is concluded that the room temperature silicon carbide thin film formation is possible even at significantly low pressure, when the substrate surface is reactive.

Si3N4工程陶瓷基底金刚石涂层生长规律及性能

为了避免氮化硅材料因产生裂纹或延伸破裂等造成的失效,利用热丝化学气相沉积法(Hot filament chemical vapor deposition,HFCVD)在氮化硅基底上沉积具有高硬度的金刚石涂层,采用单因素影响试验,分别探究碳源浓度、腔室压力、基底温度对金刚石成膜过程的影响机制,探究微米和纳米金刚石涂层的最优生长工艺参数。利用拉曼光谱仪(Raman)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)对不同参数制备出的金刚石的形核、表面形貌、薄膜质量、表面粗糙度等进行表征,利用洛氏硬度计分析膜基结合力。结果表明,腔室压力越大,活性物质到达基底的动能越小,不利于金刚石的成核和生长。生长速率和表面粗糙度主要受甲烷浓度的影响:甲烷浓度从1%到7%,生长速率从0.84μm/h上升到1.32μm/h;表面粗糙度Ra从53.4 nm降低到23.5 nm;甲烷浓度过高导致涂层脱落严重,膜基结合力变差;晶面形貌和金刚石含量受到基底温度的影响较为明显,随着温度升高,金刚石质量提高。综合基底温度、腔室压力对金刚石涂层的影响,确定最佳生长温度为900℃,气压为1 kPa。调节甲烷浓度1%为微米金刚石;甲烷浓度5%为纳米金刚石。研究方法可以优化在陶瓷基底上制备具有优异性能的金刚石薄膜的制备参数。

Electrodeposition of Gold to Conformally Fill High-Aspect-Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.

SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.

等离子体增强原子层沉积二氧化硅对多晶硅的损伤机理及防范工艺研究

文章通过电子束检测(EBI)手段研究了等离子体增强原子层沉积(PEALD) SiO_(2)过程中硅烷基酰胺类前驱体副产物对多晶硅产生不可逆损伤的机理。提出用单胺基硅烷基酰胺替代多胺基硅烷基酰胺作为前驱体,来减轻对多晶硅材料的损伤。在不损伤多晶硅前提下,进一步研究化学位阻较小的单胺基前驱体二异丙胺硅烷(DIPAS)对反应速率的影响。

CVD法制备SiC涂层的工艺影响分析

化学气相沉积(CVD)法制备的碳化硅(SiC)涂层是碳基材料表面防氧化涂层的理想选择,各项工艺直接影响涂层的沉积结果。为指导碳/碳(C/C)复合材料高温抗氧化SiC涂层的工艺调控,建立了CVD法制备SiC涂层的沉积炉仿真模型,采用计算流体力学软件对沉积结果进行数值模拟研究,探究了工件摆放和主要工艺参数对沉积结果的影响,量化了主要工艺参数的影响并优选了工艺参数组合。结果表明:建立的有限元分析模型合理可靠;工件摆放方式与间距协同影响沉积结果。在工艺参数范围内,温度对沉积均匀性影响较大,影响程度达28.39%;其次是压力,影响程度为13.90%;反应物甲基三氯硅烷(MTS)流量影响最小,影响程度为6.43%。此外,随着温度、压力的减小和MTS流量的增大,沉积均匀性提高;根据影响规律对工艺进行优化后沉积均匀性提高了102.45%。

3C-SiC纳米线的化学气相沉积法制备及超声裁剪研究

3C-SiC又称β-SiC,有着优异的耐高温、耐腐蚀、耐辐照性能,是反应堆这类复杂环境中的理想材料。近年来,一维碳化硅纳米线材料成为碳化硅材料研究领域的热门研究方向,同时也面临加工手段匮乏、加工难度大的问题。我们通过化学气相沉积法成功制备了含有高密度堆叠层错的3C-SiC纳米线,并采用扫描电子显微镜(Scanning Electron Microscope,SEM)、透射电子显微镜(Transmission Electron Microscope,TEM)、X射线衍射(X-Ray Diffraction,XRD)以及拉曼光谱(Raman spectrum)等多种手段对制备出来的碳化硅纳米线进行了微观结构表征,揭示了其独特的微观形态和晶体结构特征;进一步研究了超声裁剪碳化硅纳米线,利用“气泡-射流”模型结合碳化硅纳米线的形态解释了碳化硅纳米线的超声裁剪过程,探索了碳化硅纳米线的直径、强度、缺陷等对其在超声过程中断裂行为的影响。本研究为碳化硅纳米线的超声裁剪加工和纳米线的强度研究提供了新的视角,对于未来碳化硅纳米线在核能领域的应用具有重要的意义。