Silicon detector array for radioactive beam experiments at HIRFL-RIBLL

A new and innovative detector system based on a silicon strip detector dedicated to the study of the reaction induced by lighter radioactive beams is described herein.The detector system consists of five sets of three types of telescopes,which are successfully used to measure the angular distributions of both elastic scattering and breakup simultaneously, on the Radioactive Ion Beam Line in Lanzhou at Heavy Ion Research Facility in Lanzhou. This silicon detector array is used to measure the elastic scattering angular distributions of ^(11) Be on a ^(208) Pb target at E_(lab) = 140 and 209 MeV. A comparison of the Monte Carlo simulations with the experimental results shows a reasonable consistency.

Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors

In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.

Development of large-area quadrant silicon detector for charged particles

The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area.The leakage current under the full depletion bias voltage of-16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region.Such an event is only about 0.6% of all events and can be neglected in an actual application.

A prototype silicon detector system for space cosmic-ray charge measurement

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC （VA140） from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.

Construction and performance test of charged particle detector array for MATE

A charged particle array named MATE-PA,which serves as an auxiliary detector system for a Multi-purpose Active-target Time projection chamber used in nuclear astrophysical and exotic beam Experiments(MATE),was constructed.The array comprised of 20 single-sided strip-silicon detectors covering approximately 10%of the solid angle.The detectors facilitated the detection of reaction-induced charged particles that penetrate the active volume of the MATE.The performance of MATE-PA has been experimentally studied using an alpha source and a 36-MeV 14 N beam injected into the MATE chamber on the radioactive ion beam line in Lanzhou(RIBLL).The chamber was filled with a gas mixture of 95%4 He and 5%CO_(2) at a pressure of 500 mbar.The results indicated good separation of light-charged particles using the forward double-layer silicon detectors of MATE-PA.The energy resolution of the Si detectors was deduced to be approximately 1%(σ)for an energy loss of approximately 10 MeV caused by theαparticles.The inclusion of MATE-PA improves particle identification and increases the dynamic range of the kinetic energy of charged particles,particularly that of theαparticles,up to approximately 15 MeV.

Characterization of CIAE developed double-sided silicon strip detector for charged particles

A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both sides.Good energy resolutions have been achieved with0.65-0.80% for the junction strips and 0.85-1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments.

Readout electronics for a high-resolution soft X-ray spectrometer based on silicon drift detector

The readout electronics for a prototype soft X-ray spectrometer based on silicon drift detector(SDD),for precisely measuring the energy and arrival time of X-ray photons is presented in this paper.The system mainly consists of two parts,i.e.,an analog electronics section(including a pre-amplifier,a signal shaper and filter,a constant fraction timing circuit,and a peak hold circuit)and a digital electronics section(including an ADC and a TDC).Test results with X-ray sources show that an energy dynamic range of 1-10 keV with an integral nonlinearity of less than 0.1%can be achieved,and the energy resolution is better than 160 eV @ 5.9 keV FWHM.Using a waveform generator,test results also indicate that time resolution of the electronics system is about 3.7 ns,which is much less than the transit time spread of SDD(<100 ns)and satisfies the requirements of future applications.

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.

Determination of Shallow Impurity Concentration in Detector-grade Silicon by FT-IR Spectroscopy at 4.2K

A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration is high up to 7.8 × 10-12. The calibration curve of boron concentration in high-purity silicon has been obtained, from which the experimental value of calibration factor of boron concentration in silicon is demonstrated to be 1.15 × 1013 cm-1.

Fabrication and Characteristics of Fast Photo Response ZnO/Porous Silicon UV Photoconductive Detector

Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.

Development of Electron Temperature Measuring System by Silicon Drift Detector

The soft X-ray spectroscopy, laser Thomson scattering and electron cyclotron emission （ ECE ） are usually adopted for electron temperature measurement in fusion research of magnetic confinement. The particular soft X-ray spectroscopy has the very good spatial-temporal resolution and smaller measuring error than laser Thomson scattering, a close spatial-temporal resolution to ECE, absolute measurement ability, and smaller influence by suprathermal and runaway electrons than ECE.

Investigation of enhancement in planar fast neutron detector efficiency with stacked structure using Geant4

Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proton recoil detector was simulated, which consists of hydrogenous converter, i.e., high-density polyethylene(HDPE) for generating recoil protons by means of neutron elastic scattering(n, p) reaction and semiconductor material SiC, for generating a detectable electrical signal upon transport of recoil protons through it. SiC is considered in order to overcome the various factors associated with conventional Si-based devices such as operability in a harsh radiation environment, as often encountered in nuclear facilities. Converter layer thickness is optimized by considering 10~9 neutron events of different monoenergetic neutron sources as well as ^(241)Am-Be neutron spectrum. It is found that the optimized thickness for neutron energy range of 1–10 MeV is ~400 μm. However, the efficiency of fast neutron detection is estimated to be only 0.112%,which is considered very low for meaningful and reliable detection of neutrons. To overcome this problem, a stacked juxtaposition of converter layer between SiC layers has been analyzed in order to achieve high efficiency. It is noted that a tenfold efficiency improvement has been obtained—1.04% for 10 layers stacked configuration vis-à-vis 0.112% of single converter layer detector. Further simulation of the stacked detector with respect to variable converter thickness has been performed to achieve the efficiency as high as ~3.85% with up to 50 stacks.

Recent progress of CERN 39-cryogenic tracking detectors collaboration

Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upgrade. The detailed modeling shows that the electric field in irradiated silicon detectors can easily be manipulated by the filling state of two deep defect levels at cryogenic temperature. Advanced radiation hard detectors using charge or current injection and the current injected detectors(CID) were developed by RD39. The results show that CID detectors can be operated at the temperature of 100?200 K with much improved charge collection efficiency(CCE) as compared with RT operation. Future studies are developing ultra-hard cryogenic silicon detectors for the LHC upgrade, where the radiation hardness is required up to 1016 neq/cm2, at which trapping will limit the charge collection depth to the range of 20 to 50 μm regardless of the depletion depth. The key of our approach is to use freeze-out trapping to affect CCE.

Preliminary results for the design,fabrication,and performance of a backside-illuminated avalanche drift detector

The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.

32×32 Si盖革模式激光焦平面探测器

为了满足350 nm~1100 nm波长范围内远距离及微弱激光3维成像探测的需求,提出了一种规模为32×32的盖革模式硅激光焦平面阵列探测器,它主要由硅雪崩光电二极管阵列、读出电路芯片、微透镜阵列、半导体制冷器、引脚网格阵列壳体等元件组成。硅雪崩光电二极管焦平面阵列采用拉通型N^(+)-Π_(1)-P^(-)-Π_(2)-P^(+)结构,工作在盖革模式下,通过Si片背面抛磨减薄及盲孔刻蚀技术,实现了纤薄光敏区的加工;读出电路采用主动模式淬灭设计,使电路单元的死时间控制在50 ns以内,并利用一种带相移技术的时间数字转换电路优化方案,在满足时间分辨率不大于2 ns的同时,降低了读出电路芯片的功耗。结果表明,在反向过偏电压14 V、工作温度-40℃的条件下,该探测器在850 nm的目标波长可实现20.7%的平均光子探测效率与0.59 kHz的平均暗计数率,时间分辨率为1 ns,有效像元率优于97%。该研究为纤薄型背进光Si基激光焦平面探测器的研制提供了参考。

集成芯片硅微条探测器电子读出系统设计

设计了基于VATA460.3专用集成芯片(ASIC)的多通道、低功耗带触发硅微条探测器读出系统,该系统实现了共32路粒子入射信息读出。测试结果表明:该系统各通道基线稳定,等效噪声水平均低于0.17 fC,动态范围可达90 fC。

硅像素探测器X射线探测效率实验研究

X射线探测器经历了气体探测器和闪烁体探测器时代,进入了半导体探测器时代。作为一种新型的半导体探测器,硅像素探测器具有分辨率好、探测效率高、时间响应快、功耗低等特点。为了研究硅像素探测器X射线探测效率,设计了一套X射线探测系统,并进行了实验研究。实验分别测试了4.51、5.41、6.40、8.05 keV共4种不同能量的X射线的探测效率。后期进行了误差分析和数据处理,得到4种不同能量X射线正面入射时探测效率分别为53.00%、51.56%、40.65%和29.91%。该实验研究为寻找高探测效率的X射线探测器提供了一种新的思路。

基于自研ASIC芯片HEPS中硅微条探测器读出电子学原型系统设计与测试

时间分辨X射线粉末衍射技术是探测物质晶体结构及其演变的重要手段。单光子计数型硅微条探测器因其灵敏度高和死时间低,在高能同步辐射光源(HEPS)的X射线粉末衍射实验中发挥着重要作用。研制适用于单光子计数型一维硅微条探测器的专用ASIC读出芯片(SSDROC)及其读出电子学系统,并采用一种新标定方法解决了SSDROC各通道对同一输入输出响应不一致的问题,该方法可显著提高各通道数据一致性并减小衍射实验数据的统计误差。探测器完成各项性能测试,结果表明整体系统线性优秀、能量分辨能力强、噪声低以及计数率高,为将来大覆盖角度一维硅微条探测器系统研制奠定坚实基础。

基于JavaFx的硅像素顶点探测器原型机数据获取软件的研制

在环形正负电子对撞机(CEPC)实验中,硅像素顶点探测器对空间位置分辨率有着极高的要求,这使得其芯片和探测器设计面临巨大挑战。太初系列硅像素探测器芯片(TaichuPix)是基于CMOS技术的一种重要尝试,其首款工程批芯片被应用于开发第一个全尺寸顶点探测器原型机。为满足顶点探测器原型机在实验中的特定需求,设计并实现了一套基于JavaFx框架的跨平台数据获取系统。该系统能够高效地进行探测器原型机的配置、数据采集、在线数据校验和实时监测,同时提供了一个用户友好的图形化界面。在实验室环境及德国电子同步加速器研究所(DESY)的束流实验中,数据获取系统的功能完善性和运行稳定性得到了验证,充分满足了硅像素顶点探测器原型机的实验需求。