Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

The metal-free synthesis of graphene on singlecrystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed,single-crystal silicon substrate using metal-free, ambientpressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.

Chaotic Identification and Prediction of Silicon Content in Hot Metal

The time series data of silicon content in hot metal were identified to have the chaotic feature because of the positive maximum Lyapunov exponent, and then the time scales to predict future were estimated. Finally a chaotic local-region model was constructed to predict silicon content in hot metal with good performance due to high hitting rate.

Fuzzy Prediction of Silicon Content for BF Hot Metal

Some key operation variables influencing hot metal silicon content were selected, and time lag of each of them was obtained. A standardized fuzzy system model was developed to approach the random nonlinear dynamic system of the change of silicon content, forecast the change of silicon content and calculate silicon content. The prediction of hot metal silicon content is very successful with the data collected online from BF No. 1 at Laiwu Iron and Steel Group Co.

Hydrometallurgical purification of metallurgical grade silicon

The effects of the particle size of ground metallurgical grade silicon （MG-Si）, the sort of acids, and the type of stirring on the purified efficiency of MG-Si were investigated. It was found that a particle size less than 0.1 mm was most effective for acid leaching; the extraction yield of impurities was increased by 9% with HF leaching compared with HCl leaching and HNO3 leaching, and increased by 7% with ultrasonic stirring compared with mechanical stirring. The principle of hydrometallurgical purification of metallurgical grade silicon under ultrasonic fields was also discussed.

The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with Al_2O_3 as the gate dielectric

A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al2O3 as the gate dielectric, deposited by atomic layer deposition on tile epitaxial layer of a 4H-SiC （0001） 80N-/N＋ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al2O3 gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties （1 × 10^14 cm^-2） and low gate-leakage current （IG = 1 × 10^-3 A/cm 2@Eox = 8 MV/cm）. Analysis of the current conduction mecha- nism on the deposited Al2O3 gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim （FN） tuaneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3 is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.

High Efficient Technology of Steelmaking With Low Silicon Hot Metal on Large Converter

To resolve the difficulty in slag formation during steelmaking with low silicon hot metal and to increase productivity, a new 5-hole lance was developed by increasing oxygen flow from 50 000 m^3/h to 60 000 m^3/h. Synthetic slag was added to adjust the slag composition. The problems such as difficulty in dephosphorization and slag adhesion to oxygen lance and hood were settled. Steel production and metal yield were increased and the nozzle life was prolonged through these techniques.

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal-semiconductor field-effect transistor

Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.

New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional Poisson＇s equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating- current performances for the proposed 4H-SiC MESFET with a buffer layer of 0.2 ~tm are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency （fT） and the maximum oscillation frequency （fmax） are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-SiC MESFET structure has better power and microwave performances than the conventional structure.

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors

An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.

Extraordinary Optical Confinement in a Silicon Slot Waveguide with Metallic Gratings

We present a silicon slot waveguide with metallic gratings embedded on the silicon surface in the slot region. The dependence of the optical coupling between two silicon wires on the width of the metal gap and the slot size are studied in detail. The results show that the optical field in the slot region with metallic gratings is significantly enhanced compared with the traditional slot waveguide due to the surface plasmon polaritons coupling on metallic gratings. The extraordinary optical confinement is attributed to the low effective dielectric constant of metallic gratings. The effective dielectric constant decreases with the increasing wavelength, and reaches the minimum when the width of the metal gap is about 0.01 times the wavelength.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercala- tion, seven different metals have been successfully intercalated at the interface of graphene/Ru（O001） and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru（O001） and on Ir（l I 1）, have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.

Investigation on Steelmaking with Hot Metal Containing Low Silicon Content in Large Converter

There are some problems in steelmaking with hot metal containing low silicon content such as difficulty in slag formation, less slag for dephosphorization and slag adhesion on oxygen lance and hood. To overcome these problems, experiments wcrc conducted and some improvements were obtained, such as adding appropriate flux, increasing the lance position slightly during steelmaking and using effective multi-outlet nozzle. Moreover, to keep normal heating rate, the ore and scrap charge should be reduced due to less chemical heat input in steelmaking.

Wettability of Monocrystalline Silicon Carbide by Molten Metals and Binary Metal－Silicon Alloys

The wettability of monocrystalline silicon carbide by liquid metals (Au , Ge, Ag , Sn and Cu) and binarymetal-silicon (Ag-Si and Sn-Si) alloys was investigated between their melting points and 1430℃ with the ses-sile drop method in argon with an extremely low oxygen partial pressure. For Au and Ge on SiC, the contactangles exhibited a weak temperature dependence. Under the same experimental conditions, however, complexwetting behaviours were observed for Ag , Sn and Cu on SiC , which could be attributed to the chemical reactivi-ties between the metals and the ceramic.Additional experirnents were also performed for binary Ag-Si and Sn-Si alloys on the same SiC substratesunder the same experimental conditions. The obtained coiitact angle isotherms for the two binary alloy/SiC sys-tems were discussed and interpreted by using a statistical thermedynamics mixlel.

A High-Fe Aluminum Matrix Welding Filler Metal for Hardfacing Aluminum-Silicon Alloys

A high Fe containing aluminum matrix filler metal for hardfacing aluminum silicon alloys has been developed by using iron,nickel,and silicon as the major strengthening elements,and by measuring mechanical properties,room temperature and high temperature wear tests,and microstructural analysis.The filler metal,which contains 3.0%-5.0% Fe and 11.0%-13.0% Si,exhibits an excellent weldability.The as cast and as welded microstructures for the filler metal are of uniformly distribution and its dispersed network of hard phase is enriched with Al Si Fe Ni.The filler metal shows high mechanical properties and wear resistance at both room temperature and high temperatures.The deposited metal has a better resistance to impact wear at 220℃ than that of substrate Al Si Mg Cu piston alloy;at room temperature,the deposited metal has an equivalent resistance to slide wear with lubrication as that of a hyper eutectic aluminum silicon alloy with 27% Si and 1% Ni.

Design Intervention: An Artistic Strategy (A Strategy) to Minimize Text Fading and Metal Commemorative Plaque Theft in Ghana

The Commemorative Plaque Industry thrives at the hands of the local craftsmen in Ghana. Techniques, methods, tools, and materials used as handed to them by their previous masters have remained the same over the years. As a result, plaques produced had peculiar problems such as text fading, degrading the actual effect of the plaques. Additionally, metals once widely used for making plaques devoid of text fading in the industry seem to have lost their relevance due to metal plaque theft, rust on metal plaques, and the continuous rise in metal prices. This research uses descriptive, experimental, and case studies of the qualitative research method to examine the problems associated with locally produced commemorative plaques. A total of hundred (100) artisans, including metal scrap dealers, and plaque buyers, were selected for the study. Direct observation and face-to-face interviews were conducted with the local craftsmen, art lecturers and students, scrap dealers, and plaque buyers who were purposively sampled for the study. The study revealed that existing materials like ceramic and aluminium could be integrated innovatively to produce commemorative plaques devoid of text fading;a corrosion-resistant text could be made using anodized or coated metals used in smaller quantities to reduce costs while also making them unattractive for theft and lastly, silicone sealant was found to be a viable option for permanently inscribing text on porcelain bases. The results clarify and underline the necessity to grow the local plaque industry in terms of plaque production as another essential basis to assure high-quality plaques with no text fading that will survive for generations to serve their intended purpose.

两种调理剂对水稻土pH值和重金属吸收的影响

探明两种调理剂对近中性水稻土pH值、重金属有效性和水稻吸收的影响,及其与土壤性质的关系,为调理剂的科学开发及合理施用提供科学依据。选取水淬高炉渣源调理剂(T1)及其腐殖质改性调理剂(T2),分别设置2个施用量梯度(T1L、T1H和T2L、T2H),通过盆栽试验分析了两种调理剂及不同用量对土壤pH值、有效硅、镉、锌、铜含量,以及水稻籽粒和秸秆镉、锌、铜含量的影响。与对照(CK)相比,2个施用T1调理剂处理土壤pH值分别升高0.64和1.02,2个施用T2调理剂处理pH值分别升高0.27和0.56(P<0.05),土壤pH值随调理剂施用量的增加而增加。T1L和T1H处理土壤有效硅含量与CK相比分别提高5和22倍(P<0.05),且显著高于施用T2调理剂处理。与CK相比,T1H处理土壤有效镉、锌、铜含量分别降低37.21%、45.57%和95.30%(P<0.05);T2L和T2H处理土壤有效锌含量分别降低31.55%和30.67%,有效铜含量分别降低6.53%和19.32%(P<0.05)。与CK相比,T1L和T1H水稻籽粒锌含量分别降低23.44%和18.12%(P<0.05);施用T2调理剂后,籽粒和秸秆锌、铜含量无显著变化。土壤pH值、有效硅含量与土壤有效镉、锌、铜含量呈显著或极显著负相关,土壤有效硅含量与籽粒、秸秆镉含量呈显著负相关。研究表明,在近中性水稻土上施用富含硅的强碱性调理剂,既有利于提高土壤p H值和有效硅含量,又可有效降低土壤重金属有效性及其水稻吸收量。

SiC MOSFET开关瞬态解析建模综述

在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)可以应用于更高开关速度,其开关瞬态特性更为复杂,开关瞬态解析建模也更加困难。该文总结现有的针对SiC MOSFET与二极管换流对的开关瞬态解析建模方法,在建模过程中依次引入各种简化假设,按照简化程度由低到高的顺序,梳理解析建模的逐步简化过程。通过对比,评估各模型的优缺点以及适用场合,对其中准确性、实用性都较强的分段线性模型进行详细介绍;之后,对开关瞬态建模中关键参数的建模方法进行总结与评价;最后,指出现有SiC MOSFET开关瞬态解析模型中存在的问题,并对其未来发展给出建议。

适用于SiC MOSFET的漏源电压积分自适应快速短路保护电路研究

SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同母线电压下的Si C MOSFET短路故障,文中提出一种基于漏源电压积分的自适应快速短路保护方法(drain-sourcevoltageintegration-basedadaptivefast short-circuit protection method,DSVI-AFSCPM),研究所提出的DSVI-AFSCPM在硬开关短路(hardswitchingfault,HSF)和负载短路(fault under load,FUL)条件下的保护性能,进而研究不同母线电压对DSVI-AFSCPM的作用机理。同时,探究Si CMOSFET工作温度对其响应速度的影响。最后,搭建实验平台,对所提出的DSVI-AFSCPM在发生硬开关短路和负载短路时不同母线电压、不同工作温度下的保护性能进行实验测试。实验结果表明,所提出的DSVI-AFSCPM在不同母线电压下具有良好的保护速度自适应性,即母线电压越高,短路保护速度越快,并且其响应速度受Si CMOSFET工作温度影响较小,两种短路工况下工作温度从25℃变化到125℃,短路保护时间变化不超过90 ns。因此,该文为Si CMOSFET在不同母线电压下的可靠使用提供一定技术支撑。

用于电梯曳引机减振的MR-SRC减振器设计与分析

针对现有曳引机减振常采用的高分子减振垫因环境因素而引发性能大幅退化问题,以电梯曳引机减振器的工程应用需求为导向,确定减振器所需阻尼元件的刚度后,采用真空渗流技术将硅橡胶填充入金属橡胶孔隙并形成包覆,研制出一款耐环境影响的高性能金属橡胶/硅橡胶连续互穿相复合减振材料(metal rubber-silicone rubber continuous interwoven phase composite damping material, MR-SRC)。然后基于实际结构建立电梯曳引机的有限元数值模型。对加装MR-SRC减振器前后的电梯曳引机进行了模态分析,确定了整体结构的固有频率和振型。对MR-SRC减振器进行冲击响应分析,对比不同MR-SRC材料和冲击载荷对响应的影响,校核减振器的强度。接着,基于MR-SRC的近似等效,对减振器系统的冲击响应进行了理论计算,得出金属橡胶密度为1.8 g/cm^(3)的MR-SRC减振器对减振效果最佳。最后将所制备的MR-SRC减振器安装于实际电梯曳引机,按照电梯减振国标要求,测试电梯在运行过程中的加速度和速度变化,计算并校核电梯运行的相关特性参数。该文章提出的减振器为电梯安全可靠运行提供了一种新途径。