Si3N4-Si2N2O composites were fabricated with amorphous nano-sized silicon nitride powders by the liquid phase sintering （ LPS ）. The Si2 N2O phase was generated by an in-situ reaction 2 Si3 N4 （ s ） ＋ 1.5 02 （ g...Si3N4-Si2N2O composites were fabricated with amorphous nano-sized silicon nitride powders by the liquid phase sintering （ LPS ）. The Si2 N2O phase was generated by an in-situ reaction 2 Si3 N4 （ s ） ＋ 1.5 02 （ g ） = 3 Si2 N2O （ s ） ＋ N2 （ g ） . The content of Si2 N2 O phase up to 60% in the volume was obtained at a sintering temperature of 1 650℃ and reduced when the sintering temperature increased or decreased, indicating the reaction is reversible. The mass loss, relative density and average grain size increased with increasing the sintering temperature. The average grain size was less than 500 nm when the sintering temperature was below 1 700 ℃. The sintering procedure contains a complex crystallization and a phase transition ： amorphous silicon nitride→equiaxial α- Si3 N4→ equiaxial β- Si3 N4→ rod- like Si2 N2O→ needle- like β- Si3N4 . Small round-shaped β→ Si3 N4 particles were entrapped in the Si2 N2O grains and a high density of staking faults was situated in the middle of Si2 N2O grains at a sintering temperature of 1 650 ℃. The toughness inereased from 3.5 MPa·m^1/2 at 1 600 ℃ to 7.2 MPa· m^1/2 at 1 800 ℃ . The hardness was as high as 21.5 GPa （Vickers） at 1 600 ℃ .展开更多
Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial r...Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial reaction on the joint strength were studied. The joint strength in different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that with the increase of bonding temperature and holding time, the joint strength increases reaching a peak, and then decreases. When TiO 2 is put into YAS solder,the bonding interface with Si 3N 4/(Y Sialon glass+TiN)/TiN/Y Sialon glass is formed. When YAS solder is mixed with Si 3N 4 powder, the interfacial residual thermal stress may be decreased, and then the joint strength is enhanced. According to microanalyses, the bonding strength is related to interfacial reaction.展开更多
Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint st...Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint strength under different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that the liquid glass solders react with Si 3N 4 at interface, forming the Si 3N 4/Si 2N 2O/Y(La) sialon glass/Y(La) sialon glass gradient interface. With the increase of bonding temperature and holding time, the joint strength first increased reaching a peak, and then decreased. According to microanalyses, LaYO 3 precipitated from joint glass improves joint strength at room and high temperature.展开更多
In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3 N4 film as a buried insulator （SOSN） are successfully formed using epitaxial layer transfer technology for the first ti...In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3 N4 film as a buried insulator （SOSN） are successfully formed using epitaxial layer transfer technology for the first time. The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile. Experiment results show that the buried Si3 N4 layer is amorphous and the new SOI material has good structural and electrical properties. The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOSN can effectively mitigate the selfheating penalty. The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET.展开更多
Polyimide(PI)composite films were synthesized incorporating amino modified silicon nitride(Si_(3)N_(4))nanoparticles into PI matrix via in situ polymerization technique.The mechanical and thermal performances as well ...Polyimide(PI)composite films were synthesized incorporating amino modified silicon nitride(Si_(3)N_(4))nanoparticles into PI matrix via in situ polymerization technique.The mechanical and thermal performances as well as the hydrophobic properties of the as prepared composite films were investigated with respect to the dosage of the filler in the PI matrix.According to Thermogravimetric(TGA)analysis,meaningful improvements were achieved in T5(5%weight loss temperature)and T10(10%weight loss temperature)up to 54.1℃ and 52.4℃,respectively when amino functionalized nano Si_(3)N_(4) particles were introduced into the PI matrix.The differential scanning calorimetry(DSC)results revealed that the glass transition temperature(Tg)of the composites was considerably enhanced up to 49.7℃ when amino functionalized Si_(3)N_(4) nanoparticles were incorporated in the PI matrix.Compared to the neat PI,the PI/Si_(3)N_(4) nanocomposites exhibited very high improvement in the tensile strength as well as Young’s modulus up to 105.4%and 138.3%,respectively.Compared to the neat PI,the composites demonstrated highly decreased water absorption behavior which showed about 68.1%enhancement as the content of the nanoparticles was increased to 10 wt%.The SEM(Scanning electron microscope)images confirmed that the enhanced thermal,mechanical and water proof properties are essentially attributed to the improved compatibility of the filler with the matrix and hence,enhanced distribution inside the matrix because of the amino groups on the surface of Si_(3)N_(4) nanoparticles obtained from surface functionalization.展开更多
Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen...Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds展开更多
基金Funded by the National Science Foundation of China ( No.50375037)
文摘Si3N4-Si2N2O composites were fabricated with amorphous nano-sized silicon nitride powders by the liquid phase sintering （ LPS ）. The Si2 N2O phase was generated by an in-situ reaction 2 Si3 N4 （ s ） ＋ 1.5 02 （ g ） = 3 Si2 N2O （ s ） ＋ N2 （ g ） . The content of Si2 N2 O phase up to 60% in the volume was obtained at a sintering temperature of 1 650℃ and reduced when the sintering temperature increased or decreased, indicating the reaction is reversible. The mass loss, relative density and average grain size increased with increasing the sintering temperature. The average grain size was less than 500 nm when the sintering temperature was below 1 700 ℃. The sintering procedure contains a complex crystallization and a phase transition ： amorphous silicon nitride→equiaxial α- Si3 N4→ equiaxial β- Si3 N4→ rod- like Si2 N2O→ needle- like β- Si3N4 . Small round-shaped β→ Si3 N4 particles were entrapped in the Si2 N2O grains and a high density of staking faults was situated in the middle of Si2 N2O grains at a sintering temperature of 1 650 ℃. The toughness inereased from 3.5 MPa·m^1/2 at 1 600 ℃ to 7.2 MPa· m^1/2 at 1 800 ℃ . The hardness was as high as 21.5 GPa （Vickers） at 1 600 ℃ .
文摘Bonding of Si 3N 4 ceramic was performed with Y 2O 3 Al 2O 3 SiO 2(YAS) X glass solders,which were mixed with TiO 2 (YT) and Si 3N 4 (YN), respectively. The effects of bonding conditions and interfacial reaction on the joint strength were studied. The joint strength in different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that with the increase of bonding temperature and holding time, the joint strength increases reaching a peak, and then decreases. When TiO 2 is put into YAS solder,the bonding interface with Si 3N 4/(Y Sialon glass+TiN)/TiN/Y Sialon glass is formed. When YAS solder is mixed with Si 3N 4 powder, the interfacial residual thermal stress may be decreased, and then the joint strength is enhanced. According to microanalyses, the bonding strength is related to interfacial reaction.
文摘Liquid bonding of Si 3N 4 ceramic composite was carried out with RE 2O 3 Al 2O 3 SiO 2 glass solders. The effect of bonding conditions and interfacial reaction on the joint strength was studied. The joint strength under different bonding conditions was measured by four point bending tests. The interfacial microstructures were observed and analyzed by SEM, EPMA and XRD. It is shown that the liquid glass solders react with Si 3N 4 at interface, forming the Si 3N 4/Si 2N 2O/Y(La) sialon glass/Y(La) sialon glass gradient interface. With the increase of bonding temperature and holding time, the joint strength first increased reaching a peak, and then decreased. According to microanalyses, LaYO 3 precipitated from joint glass improves joint strength at room and high temperature.
文摘In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3 N4 film as a buried insulator （SOSN） are successfully formed using epitaxial layer transfer technology for the first time. The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile. Experiment results show that the buried Si3 N4 layer is amorphous and the new SOI material has good structural and electrical properties. The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOSN can effectively mitigate the selfheating penalty. The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET.
基金the National Natural Science Foundation of China(51373044)Natural Science Foundation of Heilongjiang Province of China(E2017018).
文摘Polyimide(PI)composite films were synthesized incorporating amino modified silicon nitride(Si_(3)N_(4))nanoparticles into PI matrix via in situ polymerization technique.The mechanical and thermal performances as well as the hydrophobic properties of the as prepared composite films were investigated with respect to the dosage of the filler in the PI matrix.According to Thermogravimetric(TGA)analysis,meaningful improvements were achieved in T5(5%weight loss temperature)and T10(10%weight loss temperature)up to 54.1℃ and 52.4℃,respectively when amino functionalized nano Si_(3)N_(4) particles were introduced into the PI matrix.The differential scanning calorimetry(DSC)results revealed that the glass transition temperature(Tg)of the composites was considerably enhanced up to 49.7℃ when amino functionalized Si_(3)N_(4) nanoparticles were incorporated in the PI matrix.Compared to the neat PI,the PI/Si_(3)N_(4) nanocomposites exhibited very high improvement in the tensile strength as well as Young’s modulus up to 105.4%and 138.3%,respectively.Compared to the neat PI,the composites demonstrated highly decreased water absorption behavior which showed about 68.1%enhancement as the content of the nanoparticles was increased to 10 wt%.The SEM(Scanning electron microscope)images confirmed that the enhanced thermal,mechanical and water proof properties are essentially attributed to the improved compatibility of the filler with the matrix and hence,enhanced distribution inside the matrix because of the amino groups on the surface of Si_(3)N_(4) nanoparticles obtained from surface functionalization.
文摘Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds
