In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon...In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers. By annealing, boron atoms in silicon paste diffuse into silicon wafers. Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles. The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy （SIMS） and sheet resistance measurements.展开更多
基金financial support from the National Basic Research Program of China("973 Program",Grant No.2013CB632101)the National Natural Science Foundation of China(Grant No.50902122)+2 种基金the R&D Program of Ministry of Education of China(Grant No.62501040202)the Innovation Team Project of Zhejiang Province(Grant No.2009R50005)the Xinmiao Program of Zhejiang Province,China
文摘In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers. By annealing, boron atoms in silicon paste diffuse into silicon wafers. Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles. The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy （SIMS） and sheet resistance measurements.
