A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is intr...A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is introduced in this paper.After making some tiny adjustments of the structure,Silvaco software is used to simulate three similar structures of PIN photodetector by measuring the spectral response,dark current,cut-off frequency and dc characteristics.From the results,it is concluded that PIN photodetector with the middle shallow diffusion area is superior to the other two ones in dark current,at least 35% lower.The responsibility of these three kinds of detector reaches the degree of 0.3A/W,and the highest spectral response is around 600nm.Their cut-off frequencies are all over 108Hz.展开更多
In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results sho...In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.展开更多
文摘A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is introduced in this paper.After making some tiny adjustments of the structure,Silvaco software is used to simulate three similar structures of PIN photodetector by measuring the spectral response,dark current,cut-off frequency and dc characteristics.From the results,it is concluded that PIN photodetector with the middle shallow diffusion area is superior to the other two ones in dark current,at least 35% lower.The responsibility of these three kinds of detector reaches the degree of 0.3A/W,and the highest spectral response is around 600nm.Their cut-off frequencies are all over 108Hz.
文摘In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.
基金The National Natural Science Foundation of China(No.61205060)the Natural Science Foundation of Fujian Province of China(No.2011J01361)the Key Project of Science and Technology of Fujian Province of China(No.2013H0047)
