介绍个人剂量仪的工作原理,利用硅半导体光电二极管测量X、γ射线的特性和新颖的软件处理算法设计了一款个人剂量仪。在中国原子能科学研究院国防科技工业电离辐射一级计量站对仪器进行了测试,测试结果:剂量率测量范围(0.1μSv/h^1 Sv/...介绍个人剂量仪的工作原理,利用硅半导体光电二极管测量X、γ射线的特性和新颖的软件处理算法设计了一款个人剂量仪。在中国原子能科学研究院国防科技工业电离辐射一级计量站对仪器进行了测试,测试结果:剂量率测量范围(0.1μSv/h^1 Sv/h);剂量率固有误差:-15%^+4.7%;累积剂量固有误差:-11%^+5.7%;角响应:-19%^+4%(垂直方向),-20%^-2%(水平方向);在能量60 ke V^1.332 Me V范围内,相对137Cs的能量响应:-22%^+0.4%;实验测试结果符合国家剂量仪鉴定规程JJG1009-2006的要求。展开更多
A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, flflfilling the bui...A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, flflfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorp- tion modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.展开更多
文摘介绍个人剂量仪的工作原理,利用硅半导体光电二极管测量X、γ射线的特性和新颖的软件处理算法设计了一款个人剂量仪。在中国原子能科学研究院国防科技工业电离辐射一级计量站对仪器进行了测试,测试结果:剂量率测量范围(0.1μSv/h^1 Sv/h);剂量率固有误差:-15%^+4.7%;累积剂量固有误差:-11%^+5.7%;角响应:-19%^+4%(垂直方向),-20%^-2%(水平方向);在能量60 ke V^1.332 Me V范围内,相对137Cs的能量响应:-22%^+0.4%;实验测试结果符合国家剂量仪鉴定规程JJG1009-2006的要求。
基金the financial support from DARPA/MTO and ARL, USA.
文摘A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, flflfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorp- tion modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.
