We fabricated a silicon structure in silicate glass prepared with metallic aluminum in the starting material, using femtosecond laser irradiation. Small Si-rich structures such as Si clusters were transformed into lar...We fabricated a silicon structure in silicate glass prepared with metallic aluminum in the starting material, using femtosecond laser irradiation. Small Si-rich structures such as Si clusters were transformed into larger, but still nano-sized, Si particles by laser irradiation. These structures grew to microsize particles due to the thermite reaction promoted by heat treatment. We determined the effect of focused laser pulses on the Si deposition process using the time-resolved transient lens method. Localized high-temperature, high-pressure, and the generation of shock waves appear to be very important in forming the Si-rich structures that ultimately grow into Si particles.展开更多
Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emi...Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.展开更多
In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out u...In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.展开更多
文摘We fabricated a silicon structure in silicate glass prepared with metallic aluminum in the starting material, using femtosecond laser irradiation. Small Si-rich structures such as Si clusters were transformed into larger, but still nano-sized, Si particles by laser irradiation. These structures grew to microsize particles due to the thermite reaction promoted by heat treatment. We determined the effect of focused laser pulses on the Si deposition process using the time-resolved transient lens method. Localized high-temperature, high-pressure, and the generation of shock waves appear to be very important in forming the Si-rich structures that ultimately grow into Si particles.
基金supported by the National Natural Science Foundation of China (Grant No 10764002)
文摘Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.
文摘In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.
