Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied dur...Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique （DECT）. The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.展开更多
The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wh...The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.展开更多
The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffr...The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher than that of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is more serious than that in ID-cut silicon wafers, while the damage depth in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damage in wire-cut silicon wafers were also discussed.展开更多
Double-spindle triple-workstation（DSTW） ultra precision grinders are mainly used in production lines for manufacturing and back thinning large diameter（≥300 mm） silicon wafers for integrated circuits.It is import...Double-spindle triple-workstation（DSTW） ultra precision grinders are mainly used in production lines for manufacturing and back thinning large diameter（≥300 mm） silicon wafers for integrated circuits.It is important, but insufficiently studied,to control the wafer shape ground on a DSTW grinder by adjusting the inclination angles of the spindles and work tables.In this paper,the requirements of the inclination angle adjustment of the grinding spindles and work tables in DSTW wafer grinders are analyzed.A reasonable configuration of the grinding spindles and work tables in DSTW wafer grinders are proposed.Based on the proposed configuration,an adjustment method of the inclination angle of grinding spindles and work tables for DSTW wafer grinders is put forward. The mathematical models of wafer shape with the adjustment amount of inclination angles for both fine and rough grinding spindles are derived.The proposed grinder configuration and adjustment method will provide helpful instruction for DSTW wafer grinder design.展开更多
Mechanisms for removal of materials during the grinding process of monocrystalline silicon have been extensively studied in the past several decades.However,debates over whether the cutting speed significantly affects...Mechanisms for removal of materials during the grinding process of monocrystalline silicon have been extensively studied in the past several decades.However,debates over whether the cutting speed significantly affects the surface integrity are ongoing.To address this debate,this study comprehensively investigates the effects of cutting speed on surface roughness,subsurface damage,residual stress,and grinding force for a constant grain depth-of-cut.The results illustrate that the changes in the surface roughness and subsurface damage relative to the grinding speed are less obvious when the material is removed in ductile-mode as opposed to in the brittle-ductile mixed mode.A notable finding is that there is no positive correlation between grinding force and surface integrity.The results of this study could be useful for further investigations on fundamental and technical analysis of the precision grinding of brittle materials.展开更多
文摘Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique （DECT）. The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.
基金Supported by the Open L ab.Foundation of Educational Ministryof China
文摘The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.
文摘The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher than that of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is more serious than that in ID-cut silicon wafers, while the damage depth in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damage in wire-cut silicon wafers were also discussed.
基金Project supported by the National High Technology Research and Development Program of China(No.2008AA042505)the National Science and Technology Key Project Program(No.2009ZX02011)the Natural Science Foundation of Guangdong Province,China (No.U0734008)
文摘Double-spindle triple-workstation（DSTW） ultra precision grinders are mainly used in production lines for manufacturing and back thinning large diameter（≥300 mm） silicon wafers for integrated circuits.It is important, but insufficiently studied,to control the wafer shape ground on a DSTW grinder by adjusting the inclination angles of the spindles and work tables.In this paper,the requirements of the inclination angle adjustment of the grinding spindles and work tables in DSTW wafer grinders are analyzed.A reasonable configuration of the grinding spindles and work tables in DSTW wafer grinders are proposed.Based on the proposed configuration,an adjustment method of the inclination angle of grinding spindles and work tables for DSTW wafer grinders is put forward. The mathematical models of wafer shape with the adjustment amount of inclination angles for both fine and rough grinding spindles are derived.The proposed grinder configuration and adjustment method will provide helpful instruction for DSTW wafer grinder design.
基金The authors appreciate the financial support from the National Natural Science Foundation of China(Grant Nos.51875078,51991372)National Key Research and Development Program of China(Grant No.2016YFB1102205)the Science Fund for Creative Research Groups of the National Natural Science Foundation of China(Grant No.51621064).
文摘Mechanisms for removal of materials during the grinding process of monocrystalline silicon have been extensively studied in the past several decades.However,debates over whether the cutting speed significantly affects the surface integrity are ongoing.To address this debate,this study comprehensively investigates the effects of cutting speed on surface roughness,subsurface damage,residual stress,and grinding force for a constant grain depth-of-cut.The results illustrate that the changes in the surface roughness and subsurface damage relative to the grinding speed are less obvious when the material is removed in ductile-mode as opposed to in the brittle-ductile mixed mode.A notable finding is that there is no positive correlation between grinding force and surface integrity.The results of this study could be useful for further investigations on fundamental and technical analysis of the precision grinding of brittle materials.
