Power Prediction of VLSI Circuits Using Machine Learning

The difference between circuit design stage and time requirements has broadened with the increasing complexity of the circuit.A big database is needed to undertake important analytical work like statistical method,heat research,and IR-drop research that results in extended running times.This unit focuses on the assessment of test strength.Because of the enormous number of successful designs for currentmodels and the unnecessary time required for every test,maximum energy ratings with all tests cannot be achieved.Nevertheless,test safety is important for producing trustworthy findings to avoid loss of output and harm to the chip.Generally,effective power assessment is only possible in a limited sample of pre-selected experiments.Thus,a key objective is to find the experiments that might give the worst situations again for testing power.It offers a machine-based circuit power estimation(MLCPE)system for the selection of exams.Two distinct techniques of predicting are utilized.Firstly,to find testings with power dissipation,it forecasts the behavior of testing.Secondly,the changemovement and energy data are linked to the semiconductor design,identifying small problem areas.Several types of algorithms are utilized.In particular,the methods compared.The findings show great accuracy and efficiency in forecasting.That enables such methods suitable for selecting the worst scenario.

Method of simulating hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink

The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.

Realization of fractional-order Liu chaotic system by circuit

In this paper, chaotic behaviours in the fractional-order Liu system are studied. Based on the approximation theory of fractional-order operator, circuits are designed to simulate the fractional- order Liu system with q=0.1 - 0.9 in a step of 0.1, and an experiment has demonstrated the 2.7-order Liu system. The simulation results prove that the chaos exists indeed in the fractional-order Liu system with an order as low as 0.3. The experimental results prove that the fractional-order chaotic system can be realized by using hardware devices, which lays the foundation for its practical applications.

Chaos in fractional-order generalized Lorenz system and its synchronization circuit simulation

The chaotic behaviours of a fractional-order generalized Lorenz system and its synchronization are studied in this paper. A new electronic circuit unit to realize fractional-order operator is proposed. According to the circuit unit, an electronic circuit is designed to realize a 3.8-order generalized Lorenz chaotic system. Furthermore, synchronization between two fractional-order systems is achieved by utilizing a single-variable feedback method. Circuit experiment simulation results verify the effectiveness of the proposed scheme.

Realization of fractional-order Liu chaotic system by a new circuit unit

A new circuit unit for the analysis and the synthesis of the chaotic behaviours in a fractional-order Liu system is proposed in this paper. Based on the approximation theory of fractional-order operator, an electronic circuit is designed to describe the dynamic behaviours of the fractional-order Liu system with α = 0.9. The results between simulation and experiment are in good agreement with each other, thereby proving that the chaos exists indeed in the fractional-order Liu system.

Dynamical analysis and circuit simulation of a new three-dimensional chaotic system

This paper reports a new three-dimensional autonomous chaotic system. It contains six control parameters and three nonlinear terms. Two cross-product terms are respectively in two equations. And one square term is in the third equation. Basic dynamic properties of the new system are investigated by means of theoretical analysis, numerical simulation, sensitivity to initial, power spectrum, Lyapunov exponent, and Poincar~ diagrams. The dynamic properties affected by variable parameters are also analysed. Finally, the chaotic system is simulated by circuit. The results verify the existence and implementation of the system.

A fractional order hyperchaotic system derived from a Liu system and its circuit realization

In this paper we propose a novel four-dimensional fractional order hyperchaotic system derived from a Liu system.Electronics workbench（EWB） and Matlab simulations show the dynamical behavior of the proposed four-dimensional fractional order hyperchaotic system.Finally,after separately using EWB and Matlab,an electronic circuit is designed to realize the novel four-dimensional fractional order hyperchaotic system and the experimental circuit results are obtained which are identical to software simulations.

APPLICATION OF CIRCUIT SIMULATION IN HARDWARE DESIGN FOR ELECTRONIC CONTROL HIGH PRESSURE COMMON-RAIL FUEL SYSTEM OF DIESEL ENGINE

By means of circuit simulation, hardware of electronic control unit （ECU） of high pressure common-rail electronic control fuel system for diesel engine is designed. According to the system requirements for hardware of ECU, signal-processing circuit of variable reluctance （VR） sensor, filter circuit for input signal, high voltage power circuit and driver and protection circuit of solenoid are simulated as emphases. Difficulties of wide scope of VR sensor output signal, efficiency of high voltage power and reliable and swift driver of solenoid are solved. The results of simulation show that the hardware meets the requirement of the fuel system. At the same time, circuit simulation can greatly increase quality of the design, alleviate design labor and shorten design time.

Design of Multi-Valued Logic Circuit Using Carbon Nano Tube Field Transistors

The design of a three-input logic circuit using carbon nanotube field effect transistors(CNTFETs)is presented.Ternary logic must be an exact replacement for dual logic since it performs straightforwardly in digital devices,which is why this design is so popular,and it also reduces chip area,both of which are examples of circuit overheads.The proposed module we have investigated is a triple-logic-based one,based on advanced technology CNTFETs and an emphasis on minimizing delay times at various values,as well as comparisons of the design working with various load capacitances.Comparing the proposed design with the existing design,the delay times was reduced from 66.32 to 16.41 ps,i.e.,a 75.26%reduction.However,the power dissipation was not optimized,and increased by 1.44%compared to the existing adder.The number of transistors was also reduced,and the product of power and delay(P∗D)achieved a value of 0.0498053 fJ.An improvement at 1 V was also achieved.A load capacitance(fF)was measured at different values,and the average delay measured for different values of capacitance had a maximum of 83.60 ps and a minimum of 22.54 ps,with a range of 61.06 ps.The power dissipations ranged from a minimum of 3.38μW to a maximum of 6.49μW.Based on these results,the use of this CNTFET half-adder design in multiple Boolean circuits will be a useful addition to circuit design.

Design and Analysing the Various Parameters of CMOS Circuit’s under Bi-Triggering Method Using Cadence Tools

Reducing the power and energy required by the device/circuit to operate is the main aim of this paper. Here the new design is implemented to reduce the power consumption of the device using the triggering pulses. The proposed triggering method uses a complementary MOS transistor (pMOS and nMOS) as a voltage divider and ground leakage suppressor (i.e.);these designs are named as Trig01 and Trig10 designs. In Trig01 design the pair of CMOS is placed in the voltage divider part;similarly in Trig10 design the pair of CMOS is placed at the ground leakage suppressor part. Standard CMOS gates like NOT, NAND, NOR, EX-OR etc. are designed with these technologies and these gates are designed with 180 nm technology file in the cadence tool suite;compared to the normal CMOS gates, the Bi-Trig gate contains 4 inputs and 2 outputs. The two extra inputs are used as Bi-Trig control signaling inputs. There are 2 control inputs and thus 22 = 4 combination of controlling is done (i.e.);both pMOS and nMOS are ON, both pMOS and nMOS are OFF, pMOS ON and nMOS OFF and pMOS ON and nMOS ON. Depending on the usage of the circuit, the mode of operation is switched to any one of the combination. If the output of the circuit is not used anywhere in the total block, that specified circuit can be switched into idle mode by means of switched OFF both the pMOS and nMOS transistor in the control unit. This reduces the leakage current and also the power wastage of the circuits in the total block. Bi-Trig controlled circuit reduces the power consumption and leakage power of the circuit without affecting a performance of the circuits.

The influences of model parameters on the characteristics of memristors

As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

Implementation of a novel two-attractor grid multi-scroll chaotic system

This paper proposed a method of generating two attractors in a novel grid multi-scroll chaotic system. Based on a newly generated three-dimensional system, a two-attractor grid multi-scroll attractor system can be generated by adding two triangular waves and a sign function. Some basic dynamical properties, such as equilibrium points, bifurcations, and phase diagrams, were studied. Furthermore, the system was experimentally confirmed by an electronic circuit. The circuit simulation results and numerical simulation results verified the feasibility of this method.

全绝缘自支撑电缆系统设计(英文)

All-dielectric self-supporting(ADSS) cables are installed along with transmission line for the purpose of communication.During installation the outer layer of the cable is hydrophobic and is not prone to dry band arcing. These cables become less hydrophobic over time and become vulnerable to dry band arcing.This loss in hydrophobicity is because of the contamination formed on the outer layer due to pollution.This is one of the reasons which cause cable failure.Considerable amount of losses will be incurred on the occurrence of a cable failure as the cables are also leased to other companies.An improved equivalent circuit is used to calculate the voltage and current distribution of the double circuit line.A three-phase single circuit line and a three-phase double circuit line are used to calculate their corresponding voltage distribution and current distribution.The results could be used to predict dry band arcing on similar models.The method used considers sag,span and pollution on ADSS cable.

基于表面势的增强型p-GaN HEMT器件模型

为了满足功率电路及系统设计对p-GaN HEMT(High Electron Mobility Transistor)器件模型的需求,本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE(Simulation Program with Integrated Circuit Emphasis)模型.根据耗尽型GaN HEMT器件和增强型p-GaN HEMT器件结构的对比,推导出p-GaN栅结构电压解析公式.考虑到p-GaN栅掺杂效应和物理机理,推导出栅电容和栅电流解析公式.同时,与基于表面势的高电子迁移率晶体管高级SPICE模型内核相结合,建立完整的增强型p-GaN HEMT功率器件的SPICE模型.将所建立的SPICE模型与实测结果进行对比验证.结果表明,所建立的模型准确实现了包括转移特性、输出特性、栅电容以及栅电流在内的p-GaN HEMT器件的电学特性.模型仿真数据与实测数据拟合度误差均小于5%.本文所提出的增强型p-GaN HEMT器件模型在进行电路设计时具有重要的应用价值.

SIMULATION IN THERMAL DESIGN FOR ELECTRONIC CONTROL UNIT OF ELECTRONIC UNIT PUMP

The high working junction temperature of power component is the most common reason of its failure. So the thermal design is of vital importance in electronic control unit （ECU） design. By means of circuit simulation, the thermal design of ECU for electronic unit pump （EUP） fuel system is applied. The power dissipation model of each power component in the ECU is created and simulated. According to the analyses of simulation results, the factors which affect the power dissipation of components are analyzed. Then the ways for reducing the power dissipation of power components are carried out. The power dissipation of power components at different engine state is calculated and analyzed. The maximal power dissipation of each power component in all possible engine state is also carried out based on these simulations. A cooling system is designed based on these studies. The tests show that the maximum total power dissipation of ECU drops from 43.2 W to 33.84 W after these simulations and optimizations. These applications of simulations in thermal design of ECU can greatly increase the quality of the design, save the design cost and shorten design time

Diagnostic of capacitively coupled radio frequency plasma from electrical discharge characteristics：comparison with optical emission spectroscopy and fluid model simulation

The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.

Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

The recent published experimental data of titanium oxide memristor devices which are tested under the same experi- mental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of mernristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coex- istence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.

ANN-Based Identification of Steady-State Behavior Parameters of Composite Power Semiconductor Device Model

The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.

Virtual Experimental Project Design in the Digital Signal Processing Course

This paper proposes the design and development of virtual experimental projects in the Digital Signal Processing course,using MATLAB,Proteus,and CCS platforms to develop a library of typical experimental cases for biomedical engineering majors and discusses the design process.Based on these typical cases,this paper explores the secondary design for innovative engineering practice case teaching,which can promote students’understanding and mastery of digital signal processing theories,algorithms,and technologies in an intuitive,flexible,and efficient way;quickly build new innovative engineering case models and further cultivate students’engineering application ability as well as innovative thinking.

Parallel Critical Path Tracing——A Fault Simulation Algorithm for Combinational Circuits

Critical path tracing,a fault simulation method for gate-level combinational circuits,is extended to theparallel critical path tracing for functional block-level combinational circuits.If the word length of the hostcomputer is m,then the parallel critical path tracing will be approximately m times faster than the originalone.