Device simulation of lead-free CH_3NH_3SnI_3 perovskite solar cells with high efficiency

The lead-free perovskite solar cells(PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite.CHNHSnIis a viable alternative to CHNHPbX,because it has a narrower band gap of 1.3 eV and a wider visible absorption spectrum than the lead halide perovskite.The progress of fabricating tin iodide PSCs with good stability has stimulated the studies of these CHNHSnIbased cells greatly.In the paper,we study the influences of various parameters on the solar cell performance through theoretical analysis and device simulation.It is found in the simulation that the solar cell performance can be improved to some extent by adjusting the doping concentration of the perovskite absorption layer and the electron affinity of the buffer and HTM,while the reduction of the defect density of the perovskite absorption layer significantly improves the cell performance.By further optimizing the parameters of the doping concentration(1.3 × 10cm~3) and the defect density(1 × 10cm~3) of perovskite absorption layer,and the electron affinity of buffer(4.0 eV) and HTM(2.6 eV),we finally obtain some encouraging results of the Jof 31.59 mA/cm~2,Vof 0.92 V,FF of 79.99%,and PCE of 23.36%.The results show that the lead-free CHNHSnIPSC is a potential environmentally friendly solar cell with high efficiency.Improving the Snstability and reducing the defect density of CHNHSnIare key issues for the future research,which can be solved by improving the fabrication and encapsulation process of the cell.

Device simulation of quasi-two-dimensional perovskite/silicon tandem solar cells towards 30%-efficiency

Perovskite/silicon(Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional(3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional(2D)(BA)_(2)(MA)_(n-1)Pbn I_(3n+1)(n = 1, 2, 3, 4, 5)(where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells(PSCs) to construct a fourterminal(4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell(n = 4) obtains a power conversion efficiency(PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride(LiF) anti-reflection layer to reduce the surface reflection loss, the current density(J_(sc)) of the top cell is enhanced from 15.56 m A/cm^(2) to 17.09 m A/cm^(2), the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n = 3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions.

Simulation study of the losses and influences of geminate and bimolecular recombination on the performances of bulk heterojunction organic solar cells

We use the method of device simulation to study the losses and influences of geminate and bimolecular recombinations on the performances and properties of the bulk heterojunction organic solar cells. We find that a fraction of electrons（holes）in the device are collected by anode（cathode）. The direction of the corresponding current is opposite to the direction of photocurrent. And the current density increases with the bias increasing but decreases as bimolecular recombination（BR）or geminate recombination（GR） intensity increases. The maximum power, short circuit current, and fill factor display a stronger dependence on GR than on BR. While the influences of GR and BR on open circuit voltage are about the same.Our studies shed a new light on the loss mechanism and may provide a new way of improving the efficiency of bulk heterojunction organic solar cells.

Simulation design of P–I–N-type all-perovskite solar cells with high efficiency

According to the good charge transporting property of perovskite, we design and simulate a p–i–n-type all-perovskite solar cell by using one-dimensional device simulator. The perovskite charge transporting layers and the perovskite absorber constitute the all-perovskite cell. By modulating the cell parameters, such as layer thickness values, doping concentrations and energy bands of n-, i-, and p-type perovskite layers, the all-perovskite solar cell obtains a high power conversion efficiency of 25.84%. The band matched cell shows appreciably improved performance with widen absorption spectrum and lowered recombination rate, so weobtain a high J_（sc） of 32.47 m A/cm^2. The small series resistance of the all-perovskite solar cell also benefits the high J_（sc）. The simulation provides a novel thought of designing perovskite solar cells with simple producing process, low production cost and high efficient structure to solve the energy problem.

Variants of Secondary Control with Power Recovery for Loading Hydraulic Driving Device

Current high power load simulators are generally incapable of obtaining both high loading performance and high energy efficiency. Simulators with high energy efficiency are used to simulate static-state load, and those with high dynamic performance typically have low energy efficiency. In this paper, the variants of secondary control（VSC） with power recovery are developed to solve this problem for loading hydraulic driving devices that operate under variable pressure, unlike classical secondary control（CSC） that operates in constant pressure network. Hydrostatic secondary control units are used as the loading components, by which the absorbed mechanical power from the tested device is converted into hydraulic power and then fed back into the tested system through 4 types of feedback passages（FPs）. The loading subsystem can operate in constant pressure network, controlled variable pressure network, or the same variable pressure network as that of the tested device by using different FPs. The 4 types of systems are defined, and their key techniques are analyzed, including work principle, simulating the work state of original tested device, static operation points, loading performance, energy efficiency, and control strategy, etc. The important technical merits of the 4 schemes are compared, and 3 of the schemes are selected, designed, simulated using AMESim and evaluated. The researching results show that the investigated systems can simulate the given loads effectively, realize the work conditions of the tested device, and furthermore attain a high power recovery efficiency that ranges from 0.54 to 0.85, even though the 3 schemes have different loading performances and energy efficiencies. This paper proposes several loading schemes that can achieve both high dynamic performance and high power recovery efficiency.

Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing（P/E） operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.

P-type cold-source field-effect transistors with TcX_(2) and ReX_(2)(X=S,Se)cold source electrodes:A computational study

Cold-source field-effect transistors(CS-FETs)have been developed to overcome the major challenge of power dissipation in modern integrated circuits.Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing(SS).In this work,regarding the p-type CS-FETs,we propose TcX_(2) and ReX_(2)(X=S,Se)as the injection source to realize the sub-thermal switching for holes.First-principles calculations unveils the cold-metal characteristics of monolayer TcX_(2) and ReX_(2),possessing a sub-gap below the Fermi level and a decreasing DOS with energy.Quantum device simulations demonstrate that TcX_(2) and ReX_(2) can enable the cold source effects in WSe_(2) p-type FETs,achieving steep SS of 29-38 mV/dec and high on/off ratios of(2.3-5.6)×10^(7).Moreover,multilayer Re S2retains the cold metal characteristic,thus ensuring similar CS-FET performances to that of the monolayer source.This work underlines the significance of cold metals for the design of p-type CS-FETs.

微生物提高原油采收率室内研究进展(英文)

This paper describes a simple, easy process for screening microorganisms, and introduces a laboratory simulation device and process of microbial enhanced oil recovery (MEOR) , which is a necessary research step for trial in oilfields. The MEOR mechanism and the influence of adsorption, diffusion, metabolism, nutrition, porosity, and permeability are analyzed. The research indicates that different microbes have different efficiencies in EOR and that different culture types play different roles in EOR. The effect of syrup is better than that of glucose, and larger porosity is favorable to the reproduction and growth of microbes, thereby improving the oil recovery. Using crude oil as a single carbon source is more appreciable because of the decrease in cost of oil recovery. At the end of this paper, the development of polymerase chain reaction (PCR) for the future is discussed.

A New Method for Fitting Current–Voltage Curves of Planar Heterojunction Perovskite Solar Cells

Herein we propose a new equivalent circuit including double heterojunctions in series to simulate the current–voltage characteristic of P–I–N planar structure perovskite solar cells. This new method can theoretically solve the dilemma of the parameter diode ideal factor being larger than2 from an ideal single heterojunction equivalent circuit,which usually is in the range from 1 to 2. The diode ideal factor reflects PN junction quality, which influences the recombination at electron transport layer/perovskite and perovskite/hole transport layer interface. Based on the double PN junction equivalent circuit, we can also simulate the dark current–voltage curve for analyzing recombination current(Shockley–Read–Hall recombination) and diffusion current(including direct recombination), and thus carrier recombination and transportation characteristics. This new model offers an efficacious and simple method to investigate interfaces condition, film quality of perovskite absorbing layer and performance of transport layer, helping us furtherimprove the device efficiency and analyze the working mechanism.

Dynamic infrared scene simulation using grayscale modulation of digital micro-mirror device

Dynamic infrared scene simulation is for discovering and solving the problems encountered in designing, developing and manufacturing infrared imaging guidance weapons. The infrared scene simulation is explored by using the digital grayscale modulation method. The infrared image modulation model of a digital micro-mirror device （DMD） is established and then the infrared scene simulator prototype which is based on DMD grayscale modulation is developed. To evaluate its main parameters such as resolution, contrast, minimum temperature difference, gray scale, various DMD subsystems such as signal decoding, image normalization, synchronization drive, pulse width modulation （PWM） and DMD chips are designed. The infrared scene simulator is tested on a certain infrared missile seeker. The test results show preliminarily that the infrared scene simulator has high gray scale, small geometrical distortion and highly resolvable imaging resolution and contrast and yields high-fidelity images, thus being able to meet the requirements for the infrared scene simulation inside a laboratory.

Study on a novel vertical enhancement-mode Ga_(2)O_(3) MOSFET with FINFET structure

A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics.The metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output currents.Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant.When the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be expanded.The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage.It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga_(2)O_(3) MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10^(16) cm^(-3),less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.

Efficient design of perovskite solar cell using mixed halide and copper oxide

Solar cells based on perovskites have emerged as a transpiring technology in the field of photovoltaic. These cells exhibit high power conversion efficiency. The perovskite material is observed to have good absorption in the entire visible spectrum which can be well illustrated by the quantum efficiency curve. In this paper, theoretical analysis has been done through device simulation for designing solar cell based on mixed halide perovskite. Various parameters have efficacy on the solar cell efficiency such as defect density, layer thickness, doping concentration, band offsets, etc. The use of copper oxide as the hole transport material has been analyzed. The analysis divulges that due to its mobility of charge carriers, it can be used as an alternative to spiro-OMeTAD. With the help of simulations, reasonable materials have been employed for the optimal design of solar cell based on perovskite material. With the integration of copper oxide into the solar cell structure, the results obtained are competent enough. The simulations have shown that with the use of copper oxide as hole transport material with mixed halide perovskite as absorber, the power conversion efficiency has improved by 6%. The open circuit voltage has shown an increase of 0.09 V, short circuit current density has increased by 2.32 mA/cm2, and improvement in fill factor is 8.75%.

Reveal the large open-circuit voltage deficit of all-inorganic CsPbIBr_(2) perovskite solar cells

Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic–inorganic hybrid perovskite solar cells(PSCs),but the larger voltage loss(V_(loss)) cannot be ignored, especially CsPbIBr_(2), which limits the improvement of efficiency. To reduce V_(loss), one promising solution is the modification of the energy level alignment between the perovskite layer and adjacent charge transport layer(CTL), which can facilitate charge extraction and reduce carrier recombination rate at the perovskite/CTL interface. Therefore, the key issues of minimum V_(loss) and high efficiency of CsPbIBr_(2)-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of the CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage(V_(oc)) is increased from 1.37 V to 1.52 V by replacing SnO_(2) with ZnO as the electron transport layer(ETL) due to more matching conduction band with the CsPbIBr;layer.

A Simplified Numerical Simulation Method Considering Active Devices for Opto-Electronic Mixed Modules

A simplified simulation method based on the FDTD technique that can handle active devices is proposed. This method well suits the electrical crosstalk analysis of multi-channel integrated, opto-electronic mixed modules. We apply this method to an 8-channel integrated super-compact high-sensitivity optical module. The results show good agreement between simulations and measurements.

Combination of Loosely and Compactly Coupled Integrations of CAD Tools and Its Applications In SAW D

A combination of the loosely and compactly coupled integrations of CAD tools and its applications in the design and fabrication of surface acoustic wave (SAW) devices are proposed in this paper. Three core modules are developed as design and mask pattern verification module,database module, and device characteristics simulation module. All the operations are controlled under Microsoft Windows GUI interface. This leads to a reduced design and fabrication cycle, workload and cost. With the knowledge-based library for intelligent design and Lotus Notes database for distributed and networked engineering database management (EDM) and effective control of documents, a new enterprise-leveled, computer-integrated design and manufacturing system (CIDMS)can be established for monolithic and hybrid device design (not only confined to SAW device).

S7300PROFINET网络组态及硬件故障测试

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Simulation study on short channel double-gate junctionless field-effect transistors

We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed.Distributions of electron concentration,electric field and potential in the body channel region are also analyzed.Comparisons with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.

A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

A new quasi-three-dimensional （quasi-3D） numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

Variation of Ⅰ–Ⅴ characteristics due to process parameters as base for modeling the component variability for LDD MOSFET devices

In this paper,we present the effect of process parameters variations on Ⅰ-Ⅴ characteristics of LDD MOSFETs through a simulation study,applying also to any submicron device.In particular,we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production.At last,we examine a linear Ⅰ-Ⅴ model to simulate more adequately the effects of variation of the process parameters as correction to the base model.

Avalanche behavior of power MOSFETs under different temperature conditions

The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studied by experiment and two-dimensional device simulation. The experiment is performed to investigate dynamic avalanche failure behavior of the domestic power MOSFETs which can occur at the rated maximum operation temperature range （-55 to 150 ℃）. An advanced ISE TCAD two-dimensional mixed mode simulator with thermodynamic non-isothermal model is used to analyze the avalanche failure mechanism. The unclamped inductive switching measurement and simulation results show that the parasitic components and thermal effect inside the device will lead to the deterioration of the avalanche reliability of power MOSFETs with increasing temperature. The main failure mechanism is related to the parasitic bipolar transistor activity during the occurrence of the avalanche behavior.