In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltag...In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.展开更多
Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche d...Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.展开更多
The effect of negative bias temperature instability （NBTI） on a single event transient （SET） has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that...The effect of negative bias temperature instability （NBTI） on a single event transient （SET） has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.展开更多
An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with t...An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.展开更多
针对相对径向加速度较小时,已有的到达时间(time of arrival, TOA)二次变化率定位方法精度低的问题,提出基于TOA变化率的高精度定位方法。为了提高TOA变化率估计精度,提出忽略径向加速度进行有偏估计的方法;基于有偏的TOA变化率,首先采...针对相对径向加速度较小时,已有的到达时间(time of arrival, TOA)二次变化率定位方法精度低的问题,提出基于TOA变化率的高精度定位方法。为了提高TOA变化率估计精度,提出忽略径向加速度进行有偏估计的方法;基于有偏的TOA变化率,首先采用牛顿迭代方法,获得目标位置的粗估计,再根据粗定位值近似计算定位偏差,对粗定位进行偏差修正,得到目标位置的高精度估计。理论分析了利用有偏估计进行定位带来的随机误差和定位偏差,以及偏差修正后的定位精度。仿真分析表明,在观测站速度和加速度较小时,本文提出的TOA变化率定位方法精度优于TOA二次变化率定位方法,提出的偏差修正方法可有效降低有偏估计带来的定位偏差,定位精度优于无偏TOA变化率定位方法。展开更多
The longitudinal piezoelectric response of[001]poled rhombohedral and orthorhombic Pb(In_(1/2)Nb_(1/2))O_(3)-Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3)crystals were investigated with respect to DC bias electric field,being i...The longitudinal piezoelectric response of[001]poled rhombohedral and orthorhombic Pb(In_(1/2)Nb_(1/2))O_(3)-Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3)crystals were investigated with respect to DC bias electric field,being in the range of-2-15 kV/cm.For rhombohedral crystals with compo-sitions far away from morphotropic phase boundary(MPB),the piezoelectric response generally decreased with increasing positive DC bias field,while for crystals with MPB compositions,the piezoelectric response firstly decreased and then increased as function of DC bias.The piezo-electric response was found to decrease drastically when DC bias larger than phase transition feld.On the other hand,the piezoelectric response was slightly enhanced for all the crystals as function of negative DC bias prior to the depolarization.To explain the obtained results,the field dependent piezoelectric cofficients in domain engineered crystals were analyzed based on ther-modynamic approach.展开更多
基金Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004)the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014)
文摘In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.
文摘Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.
基金Project supported by the Key Program of the National Natural Science Foundation of China(No.60836004)the National Natural Science Foundation of China(Nos.61006070,61076025)
文摘The effect of negative bias temperature instability （NBTI） on a single event transient （SET） has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.
基金supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004)the National Natural Science Foundation of China (Grant Nos. 61006070, 61076025)
文摘An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.
文摘针对相对径向加速度较小时,已有的到达时间(time of arrival, TOA)二次变化率定位方法精度低的问题,提出基于TOA变化率的高精度定位方法。为了提高TOA变化率估计精度,提出忽略径向加速度进行有偏估计的方法;基于有偏的TOA变化率,首先采用牛顿迭代方法,获得目标位置的粗估计,再根据粗定位值近似计算定位偏差,对粗定位进行偏差修正,得到目标位置的高精度估计。理论分析了利用有偏估计进行定位带来的随机误差和定位偏差,以及偏差修正后的定位精度。仿真分析表明,在观测站速度和加速度较小时,本文提出的TOA变化率定位方法精度优于TOA二次变化率定位方法,提出的偏差修正方法可有效降低有偏估计带来的定位偏差,定位精度优于无偏TOA变化率定位方法。
基金supported by the National Basic Research Program of China(973 Program)under Grant No.2009CB623306International Science and Technology Cooperation Program of China under Grant No.2010DFR50480National Nature Science Foundation of China(Grant Nos.10976022 and 50632030).
文摘The longitudinal piezoelectric response of[001]poled rhombohedral and orthorhombic Pb(In_(1/2)Nb_(1/2))O_(3)-Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3)crystals were investigated with respect to DC bias electric field,being in the range of-2-15 kV/cm.For rhombohedral crystals with compo-sitions far away from morphotropic phase boundary(MPB),the piezoelectric response generally decreased with increasing positive DC bias field,while for crystals with MPB compositions,the piezoelectric response firstly decreased and then increased as function of DC bias.The piezo-electric response was found to decrease drastically when DC bias larger than phase transition feld.On the other hand,the piezoelectric response was slightly enhanced for all the crystals as function of negative DC bias prior to the depolarization.To explain the obtained results,the field dependent piezoelectric cofficients in domain engineered crystals were analyzed based on ther-modynamic approach.
