This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction...This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.展开更多
To assses the effect of single nucleotide polymorphism of excision repair cross-complementation group 1 C8092A on the clinical outcome and toxicity in advanced stage non-small cell lung cancer patients receiving first...To assses the effect of single nucleotide polymorphism of excision repair cross-complementation group 1 C8092A on the clinical outcome and toxicity in advanced stage non-small cell lung cancer patients receiving first line platinum based chemotherapy.MethodsThis article is a review of the current research on single nucleotide polymorphism and its effect on treatment outcome and toxicity of advanced stage lung cancer.Conclusion The observations indicate that more advanced studies and trials on C8092A SNPs are needed so as to assess if it could be used as a potential biomarker in the future.展开更多
A dynamically screened three-Coulomb-wave （DS3C） method is applied to study the single ionization of magnesium by electron impact. Triple differential cross sections （TDCS） are calculated in doubly symmetric geome...A dynamically screened three-Coulomb-wave （DS3C） method is applied to study the single ionization of magnesium by electron impact. Triple differential cross sections （TDCS） are calculated in doubly symmetric geometry at incident energies of 13.65, 17.65, 22.65, 27.65, 37.65, 47.65, 57.65, and 67.65 eV. Comparisons are made with experimental data and theoretical predictions from a three-Coulomb-wave function （3C） approach and distorted-wave Born approximation （DWBA）. The overall agreement between the predictions of the DS3C model and the DWBA approach with the experimen- tal data is satisfactory.展开更多
文摘This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.
文摘To assses the effect of single nucleotide polymorphism of excision repair cross-complementation group 1 C8092A on the clinical outcome and toxicity in advanced stage non-small cell lung cancer patients receiving first line platinum based chemotherapy.MethodsThis article is a review of the current research on single nucleotide polymorphism and its effect on treatment outcome and toxicity of advanced stage lung cancer.Conclusion The observations indicate that more advanced studies and trials on C8092A SNPs are needed so as to assess if it could be used as a potential biomarker in the future.
基金supported by the National Natural Science Foundation of China(Grant No.11274215)
文摘A dynamically screened three-Coulomb-wave （DS3C） method is applied to study the single ionization of magnesium by electron impact. Triple differential cross sections （TDCS） are calculated in doubly symmetric geometry at incident energies of 13.65, 17.65, 22.65, 27.65, 37.65, 47.65, 57.65, and 67.65 eV. Comparisons are made with experimental data and theoretical predictions from a three-Coulomb-wave function （3C） approach and distorted-wave Born approximation （DWBA）. The overall agreement between the predictions of the DS3C model and the DWBA approach with the experimen- tal data is satisfactory.
文摘单电感双输出(single-inductor dual-output,SIDO)开关变换器工作在共享充放时序下存在电感电流纹波大、输出支路间交叉影响严重以及电路参数宽范围变化下控制电路不能正常工作等问题.为此,提出一种独立充放时序电流型变频控制(current-mode variable frequency control,C-VF)技术.首先,具体描述变换器在连续导电模式(continuous conduction mode,CCM)下的工作原理,并推导主电路开环传递函数;进一步构建闭环小信号模型,推导闭环交叉阻抗,详细分析不同输出电压及负载电流下变换器的交叉影响特性;最后,通过仿真和实验进行验证.研究表明:相较于共享充放时序,独立充放时序C-VF CCM SIDO buck变换器减小了交叉影响,改善了负载瞬态响应性能;当两支路负载电压不等时,减轻某一支路负载可以降低该支路的交叉影响;当两支路输出电压相同但负载不同时,重载支路对轻载支路的交叉影响更小.
