The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam pl...Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.展开更多
Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperatur...Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperature on Mn and Si atoms. A fast oxidation of Si atoms occurs followed by oxidation of Mn atoms at RT. The MnO<sub>2</sub> was reduced by Si atoms and the SiO was oxidized further to SiO<sub>2</sub> during the sample heating.展开更多
After70-90% cold-rolling,strong{111}〈110〉and weak {111},〈112〉 cold-rolled tex- tures and perfect{111}〈112〉 recrystallization texture were obtained in Fe-Si single crys- tals.The cold-rolled textures with differe...After70-90% cold-rolling,strong{111}〈110〉and weak {111},〈112〉 cold-rolled tex- tures and perfect{111}〈112〉 recrystallization texture were obtained in Fe-Si single crys- tals.The cold-rolled textures with different orientations possesses different ability for recov- ery because of the difference of dislocation structure and store energy alter cold-rolling.The recovery taking place at{111}〈112〉orientation region was prior to that at{111}〈110〉 orientation region.hese subgrains with{111}〈112〉 orientation became recrvstallization nuclei during their growth at expending the surrounding matrix which was sluggish in recovery process.The development of recrystallization textures may be suggested as a process of “nucleation in-situ-selective growth”.The formation of(111)textures in low carbon steel sheets has been discussed in the light of this suggestion.展开更多
An investigation has been made of the disloca- tion distribution and dislocation free zone near the crack tip in bulk Fe-3% Si single crystal during deformation in SEM.It has been found that a number of dislocations w...An investigation has been made of the disloca- tion distribution and dislocation free zone near the crack tip in bulk Fe-3% Si single crystal during deformation in SEM.It has been found that a number of dislocations were emitted from the crack tip during deformation.After that,the dislocations moved rapidly away from the crack tip,which indi- cated that they were strongly repelled by the stress field at the crack tip.Between the crack tip and the plastic zone there is a region of dislocation-free, which is referred to as dislocation-free zone (DFZ). The length of DFZs is roughly estimated 100 μm which is much longer than that found in thin foil specimen.The variation of dislocation density as a function of the distance from the crack tip was measured,which showed that the dislocations are inversely piled up in the plastic zone.The length of DFZs increased with both the length of pre-crack and the amplitude of applied stress.展开更多
对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PT...对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 e V;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 e V;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构。展开更多
The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses. A special thermal modeling tool, CrysVUn...The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses. A special thermal modeling tool, CrysVUn, was used for numerical analysis of thermal elastic stresses and stress distribution of 300 mm Si crystal under the consideration of different thermal shields and gas flow conditions. The adopted governing partial equations for stress calculation are Cauchy′s first and second laws of motion. It is demonstrated that the presence and shape of thermal shield, the gas pressure and velocity can strongly affect von Mises stress distribution in Si crystal. With steep-wall shield, however, the maximal stress and ratio of high stress area are relatively low. With slope-wall shield or without shield, both maximal stress and ratio of high stress area are increased in evidence. Whether thermal shields are used or not, the increase of gas flow velocity could raise the stress level. In contrast, the increase of gas pressure cannot result in so significant effect. The influence of thermal shield and gas flow should be attributed to the modification of heat conduction and heat radiation by them.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
文摘Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.
文摘Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperature on Mn and Si atoms. A fast oxidation of Si atoms occurs followed by oxidation of Mn atoms at RT. The MnO<sub>2</sub> was reduced by Si atoms and the SiO was oxidized further to SiO<sub>2</sub> during the sample heating.
文摘After70-90% cold-rolling,strong{111}〈110〉and weak {111},〈112〉 cold-rolled tex- tures and perfect{111}〈112〉 recrystallization texture were obtained in Fe-Si single crys- tals.The cold-rolled textures with different orientations possesses different ability for recov- ery because of the difference of dislocation structure and store energy alter cold-rolling.The recovery taking place at{111}〈112〉orientation region was prior to that at{111}〈110〉 orientation region.hese subgrains with{111}〈112〉 orientation became recrvstallization nuclei during their growth at expending the surrounding matrix which was sluggish in recovery process.The development of recrystallization textures may be suggested as a process of “nucleation in-situ-selective growth”.The formation of(111)textures in low carbon steel sheets has been discussed in the light of this suggestion.
文摘An investigation has been made of the disloca- tion distribution and dislocation free zone near the crack tip in bulk Fe-3% Si single crystal during deformation in SEM.It has been found that a number of dislocations were emitted from the crack tip during deformation.After that,the dislocations moved rapidly away from the crack tip,which indi- cated that they were strongly repelled by the stress field at the crack tip.Between the crack tip and the plastic zone there is a region of dislocation-free, which is referred to as dislocation-free zone (DFZ). The length of DFZs is roughly estimated 100 μm which is much longer than that found in thin foil specimen.The variation of dislocation density as a function of the distance from the crack tip was measured,which showed that the dislocations are inversely piled up in the plastic zone.The length of DFZs increased with both the length of pre-crack and the amplitude of applied stress.
文摘对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 e V;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 e V;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构。
基金The project was finanicallysupported bythe International Scientific and Technical Cooperation Major Planning Project(2005DFA5105).
文摘The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses. A special thermal modeling tool, CrysVUn, was used for numerical analysis of thermal elastic stresses and stress distribution of 300 mm Si crystal under the consideration of different thermal shields and gas flow conditions. The adopted governing partial equations for stress calculation are Cauchy′s first and second laws of motion. It is demonstrated that the presence and shape of thermal shield, the gas pressure and velocity can strongly affect von Mises stress distribution in Si crystal. With steep-wall shield, however, the maximal stress and ratio of high stress area are relatively low. With slope-wall shield or without shield, both maximal stress and ratio of high stress area are increased in evidence. Whether thermal shields are used or not, the increase of gas flow velocity could raise the stress level. In contrast, the increase of gas pressure cannot result in so significant effect. The influence of thermal shield and gas flow should be attributed to the modification of heat conduction and heat radiation by them.
