The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to ...The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.展开更多
The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric fi...The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.展开更多
针对空间应用,开展SiC MOSFET单粒子效应试验研究。在加速器上用重离子辐照1200 V SiC MOSFET,离子线性能量传输(LET)在0.26~118 MeV·cm^(2)/mg之间,辐照中被试器件加50~600 V静态漏源偏置电压、栅源短接,实时测量电特性,进行辐照...针对空间应用,开展SiC MOSFET单粒子效应试验研究。在加速器上用重离子辐照1200 V SiC MOSFET,离子线性能量传输(LET)在0.26~118 MeV·cm^(2)/mg之间,辐照中被试器件加50~600 V静态漏源偏置电压、栅源短接,实时测量电特性,进行辐照后栅应力(PIGS)测试。试验结果发现,50~100 V偏置电压下,离子引起瞬态电流,PIGS测试栅失效。分析认为离子引起栅氧化物潜在损伤,PIGS测试过程中,潜在损伤进一步退化导致栅失效。氧化物潜在损伤不仅与辐照偏置电压有关,还与入射离子LET和注量有关。PIGS测试需要的栅应力时间与潜在损伤程度有关,可超过300 s。并给出了电荷累积损伤模型。模型进行SiC MOSFET单粒子效应评估时,应考虑离子引起栅氧化物潜在损伤的影响,需根据轨道和任务周期确定试验离子注量,根据应用情况确定辐照偏置电压,并评估确定PIGS测试栅应力时间。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.12004329)Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Grant No.SKLIPR2115)+1 种基金Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant No.SJCX22_1704)Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University,China(Grant Nos.YZ202026301 and YZ202026306)。
文摘The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.
文摘The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.
文摘针对空间应用,开展SiC MOSFET单粒子效应试验研究。在加速器上用重离子辐照1200 V SiC MOSFET,离子线性能量传输(LET)在0.26~118 MeV·cm^(2)/mg之间,辐照中被试器件加50~600 V静态漏源偏置电压、栅源短接,实时测量电特性,进行辐照后栅应力(PIGS)测试。试验结果发现,50~100 V偏置电压下,离子引起瞬态电流,PIGS测试栅失效。分析认为离子引起栅氧化物潜在损伤,PIGS测试过程中,潜在损伤进一步退化导致栅失效。氧化物潜在损伤不仅与辐照偏置电压有关,还与入射离子LET和注量有关。PIGS测试需要的栅应力时间与潜在损伤程度有关,可超过300 s。并给出了电荷累积损伤模型。模型进行SiC MOSFET单粒子效应评估时,应考虑离子引起栅氧化物潜在损伤的影响,需根据轨道和任务周期确定试验离子注量,根据应用情况确定辐照偏置电压,并评估确定PIGS测试栅应力时间。
