Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

We investigate the angular dependence of proton-induced single event transient(SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume.

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayer

The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.

Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

With the critical charge reduced to generate a single event effect(SEE) and high working frequency for a nanometer integrated circuit,the single event effect(SET) becomes increasingly serious for high performance SOC and DSP chips.To analyze the radiation-hardened method of SET for the nanometer integrated circuit,the n^+ guard ring and p^+ guard ring have been adopted in the layout for a 65 nm commercial radiation-hardened standard cell library.The weakest driving capacity inverter cell was used to evaluate the single event transient(SET) pulse-width distribution.We employed a dual-lane measurement circuit to get more accurate SET'S pulsewidth.Six kinds of ions,which provide LETs of 12.5,22.5,32.5,42,63,and 79.5 MeV·cm^2/mg,respectively,have been utilized to irradiate the SET test circuit in the Beijing Tandem Accelerator Nuclear Physics National Laboratory.The testing results reveal that the pulse-width of most SETs is shorter than 400 ps in the range of LET_(eff) from 12.5 MeV·cm^2/mg to 79.5 MeV·cm^2/mg and the pulse-width presents saturation tendency when the effective linear energy transfer(LET_(eff)) value is larger than 40 MeV·cm^2/mg.The test results also show that the hardened commercial standard cell's pulse-width concentrates on 33 to 264 ps,which decreases by 40% compared to the pulse-width of the 65 nm commercial unhardened standard cell.

Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is investigated.The laser wavelength and bias condition have been proven to have significant impacts on the characterization of the single event transient(SET) response of the device by two-dimensional(2-D) raster scanning.After optical analytical calculation,the laser-induced charge distribution is well-embedded in the 3-D TCAD process simulation conducted to explore the underlying physical mechanism.In addition to the ion shunt effect,the excess electron injection from the emitter to the base could play a vital role in the SET peak amplitude and charge collection.The impact of the metal layer on the SPA experimental results is also determined by establishing a figure of merit that will help researchers estimate the laser-induced transient sensitivity of devices with metal layer blocking.

Error Correction Circuit for Single-Event Hardening of Delay Locked Loops

In scaled CMOS processes, the single-event effects generate missing output pulses in Delay-Locked Loop (DLL). Due to its effective sequence detection of the missing pulses in the proposed Error Correction Circuit (ECC) and its portability to be applied to any DLL type, the ECC mitigates the impact of single-event effects and completes its operation with less design complexity without any concern about losing the information. The ECC has been implemented in 180 nm CMOS process and measured the accuracy of mitigation on simulations at LETs up to 100 MeV-cm2/mg. The robustness and portability of the mitigation technique are validated through the results obtained by implementing proposed ECC in XilinxArtix 7 FPGA.

Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation

The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor(SiGe HBT).The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam experiment.Additionally,a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD simulation.The results obtained by the validated model exhibit good consistency with the proton experiment.