Single Photon Detection Technology in Underwater Wireless Optical Communication:Modulation Modes and Error Correction Coding Analysis

This study explores the application of single photon detection(SPD)technology in underwater wireless optical communication(UWOC)and analyzes the influence of different modulation modes and error correction coding types on communication performance.The study investigates the impact of on-off keying(OOK)and 2-pulse-position modulation(2-PPM)on the bit error rate(BER)in single-channel intensity and polarization multiplexing.Furthermore,it compares the error correction performance of low-density parity check(LDPC)and Reed-Solomon(RS)codes across different error correction coding types.The effects of unscattered photon ratio and depolarization ratio on BER are also verified.Finally,a UWOC system based on SPD is constructed,achieving 14.58 Mbps with polarization OOK multiplexing modulation and 4.37 Mbps with polarization 2-PPM multiplexing modulation using LDPC code error correction.

Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection

We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength. In this method, the raw single photon avalanche signals are not attenuated, thus a high signal-to-noise ratio can be obtained compared with the existing results. The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10^-4 at 213 K.

Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes

In Ga As/In P single photon avalanche diodes（SPADs） are more and more available in many research fields. They are affected by afterpulsing which leads to a poor single photon detection probability. We present an In Ga As/In P avalanche photodiode with an active quenching circuit on an application specific integrated circuit（ASIC）. It can quench the avalanche rapidly and then reduce the afterpulse rate. Also this quenching circuit can operate in both free-running and gated modes.Furthermore, a new technique is introduced to characterize the influence of the higher order of afterpulses, which uses a program running on a field programmable gate array（FPGA） integrated circuit.

Photon counts modulation in optical time domain reflectometry

The quantum fluctuation of photon counting limits the field application of optical time domain reflection. A method of photon counts modulation optics time domain reflection with single photon detection at 1.55 μm is presented. The influence of quantum fluctuation can be effectively controlled by demodulation technology since quantum fluctuation shows a uniform distribution in the frequency domain. Combined with the changing of the integration time of the lock-in amplifier, the signal to noise ratio is significantly enhanced. Accordingly the signal to noise improvement ratio reaches 31.7 dB compared with the direct photon counting measurement.

Direct measurement of the surface dynamics of supercooled liquid-glycerol by optical scanning a film

The surface dynamics of supercooled liquid-glycerol is studied by scanning the thickness of the glycerol film with single photon detection. Measurements are performed at room temperature well above the glyeerol＇s glass transition temperature. It is shown that the surface dynamics of the glycerol film is very sensitive to the temperature. The linear relationship between the thickness of the film and the viscosity predicted by the Vogel Pulcher-Tammann Hesse （VFTH） law is also presented experimentally.

Emerging technologies in Si active photonics

Silicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key chal- lenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-per- formance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p-i-n photo- diodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electron- icSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging tech- nologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss re- cent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator ma- terials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-ab- sorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p-i-n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic-photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with perform- ance inaccessible from conventional Si photonics technologies.