Understanding Bridging Sites and Accelerating Quantum Efficiency for Photocatalytic CO_(2) Reduction

We report a novel double-shelled nanoboxes photocatalyst architecture with tailored interfaces that accelerate quantum efficiency for photocatalytic CO_(2) reduction reaction(CO_(2)RR)via Mo–S bridging bonds sites in S_(v)–In_(2)S_(3)@2H–MoTe_(2).The X-ray absorption near-edge structure shows that the formation of S_(v)–In_(2)S_(3)@2H–MoTe_(2) adjusts the coordination environment via interface engineering and forms Mo–S polarized sites at the interface.The interfacial dynamics and catalytic behavior are clearly revealed by ultrafast femtosecond transient absorption,time-resolved,and in situ diffuse reflectance–Infrared Fourier transform spectroscopy.A tunable electronic structure through steric interaction of Mo–S bridging bonds induces a 1.7-fold enhancement in S_(v)–In_(2)S_(3)@2H–MoTe_(2)(5)photogenerated carrier concentration relative to pristine S_(v)–In_(2)S_(3).Benefiting from lower carrier transport activation energy,an internal quantum efficiency of 94.01%at 380 nm was used for photocatalytic CO_(2)RR.This study proposes a new strategy to design photocatalyst through bridging sites to adjust the selectivity of photocatalytic CO_(2)RR.

Improved decoy-state quantum key distribution with uncharacterized heralded single-photon sources

Encoding system plays a significant role in quantum key distribution(QKD).However,the security and performance of QKD systems can be compromised by encoding misalignment due to the inevitable defects in realistic devices.To alleviate the influence of misalignments,a method exploiting statistics from mismatched basis is proposed to enable uncharacterized sources to generate secure keys in QKD.In this work,we propose a scheme on four-intensity decoy-state quantum key distribution with uncharacterized heralded single-photon sources.It only requires the source states are prepared in a two-dimensional Hilbert space,and can thus reduce the complexity of practical realizations.Moreover,we carry out corresponding numerical simulations and demonstrate that our present four-intensity decoy-state scheme can achieve a much higher key rate compared than a three-intensity decoy-state method,and meantime it can obtain a longer transmission distance compared than the one using weak coherent sources.

Calculation method of quantum efficiency to TiO_2 nanocrystal photocatalysis reaction

The quantum yield is an important factor to evaluate the efficiency of photoreactor. This article gives an overall calculation method of the quantum efficiency( Φ ) and the apparent quantum efficiency( Φ a) to the TiO 2/UV photocatalysis system. Furthermore, for the immobility system (IS), the formulation of the faction of light absorbed by the TiO 2 thin film is proposed so as to calculate the quantum efficiency by using the measured value and theoretic calculated value of transmissivity (T). For the suspension system(SS), due to the difficulty to obtain the absorption coefficient ( α ) of TiO 2 particulates, the quantum efficiency is calculated by means of the relative photonic efficiency ( ζ r) and the standard quantum yield ( Φ standard ).

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

High Quantum Efficiency and High Concentration Erbium-Doped Silica Glasses Fabricated by Sintering Nanoporous Glasses

A new method was used to prepare erbium-doped high silica （SiO2 % 〉 96 % ） glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM （Full Wave at Half Maximum） of 50 nm, wider than 35 nm of EDSFA （erbium-doped silica fiber amplifer）, and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass （6 × 10^3） is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.

Quantum Efficiency of Fluorescent Dyes and Color Matching

Because of the special optical characters, the color matching of fluorescent dyes is quite complicated. In order to find the algorithm of the color matching of fluorescent dyes, some experiments and measurements of one kind of fluorescent dye were carried out. An elementary probe into the method of color matching of fluorescent dyes has been made through the expression deduced by James S. Bonham and standard Kubelka-Munk theory. The results prove that the method has a great applicability for the color matching of fabric dyed with only one kind of fluorescent dye.

Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well

The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.

Perovskite LEDs: World Record of External Quantum Efficiency That ApproachThose of the Best-performing Organic LEDs

Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society,for example, in lighting, flat-panel displays, medical devices and many other situations. Ge- nerally, the efficiency of LEDs is limited by nonradiative recombination (whereby charge carriers recombine without releasing photons) and light trapping [1]. In planar LEDs, such as organic LEDs, around 70% to 80% of the light generated from the emitters is trapped in the device [2], leaving considerable opportunity for improvements in efficiency. Many methods, including the use of diffraction gratings, low-index grids and buckling patterns, have been used to extract the light trapped in LEDs [3]. However, these methods usually involve complicated fabrication processes and can distort the light-output spectrum and directionality [3].

High Deep-Ultraviolet Quantum Efficiency GaN P–I–N Photodetectors with Thin P-GaN Contact Layer

GaN ultraviolet(UV)p-i-n photodetectors(PDs)with a 40 nm thin p-GaN contact layer are fabricated on sapphire substrates,which exhibit enhanced quantum efficiency especially in a deep-UV wavelength range.The PDs show good rectification behavior and low dark current in pA level for reverse bias up to-10 V.Under zero bias,the maximum quantum efficiency of the PD at 360 nm is close to 59.4%with a UV/visible rejection ratio more than 4 orders of magnitude.Even at a short wavelength of 280 nm,the quantum efficiency of the PD is still around 47.5%,which is considerably higher than that of a control device with a thicker p-GaN contact layer.The room temperature thermal noise limited detectivity of the PD is calculated to be~4.96×10^(14) cm·Hz^(1/2)W^(-1).

Graphene quantum dots assisted photovoltage and efficiency enhancement in CdSe quantum dot sensitized solar cells

CdSe quantum dot sensitized solar cells （QDSCs） modified with graphene quantum dots （GQDs） have been successfully achieved in this work for the first time. Satisfactorily, the optimized photovoltage （Voc） of the modified QDSCs was approximately 0.04 V higher than that of plain CdSe QDSCs, consequently improving the photovoltaic performance of the resulting QDSCs. Served as a novel coating on the CdSe QD sensitized photoanode, GQDs played a vital role in improving Voc due to the suppressed charge recombination which has been confirmed by electron impedance spectroscopy as well as transient photovoltage decay measure- ments. Moreover, different adsorption sequences, concentration and deposition time of GQDs have also been systematically investigated to boost the power conversion efficiency （PCE） of CdSe QDSCs. After the coating of CdSe with GQDs, the resulting champion CdSe QDSCs exhibited an improved PCE of 6.59% under AM 1.5G full one sun illumination.

The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi- quantum well （MQW） LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence （PL） spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows： 1） the improvement in crystal quality, namely the reduction in V-defects; 2） the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3） the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

Influence of wet chemical cleaning on quantum efficiency of GaN photocathode

GaN samples 1-3 are cleaned by a 2：2：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%） to de-ionized water;hydrochloric acid（37%）;or a 4：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%）.The samples are activated by Cs/O after the same annealing process.X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows：sample 1 has the largest proportion of Ga,N,and O among the three samples,while its C content is the lowest.After activation the quantum efficiency curves show sample 1 has the best photocathode performance.We think the wet chemical cleaning method is a process which will mainly remove C contamination.

Multi－diffused Reflection Spectroscopy of Rare Earths Doped LaOCl Powder Samples and the Calculation of Quantum Efficiency

The excitation and emission spectra, the relaxation time of principal spectral lines and multi-diffused reflection spectra in LaOCl: Er, LaOCl: Ho powder samples were measured. The diffused absorption spectrum was derived from the multi-diffused reflection spectrum. According to Judd-Ofelt theory,the intensity parameters, radiative transition probabilities and quantum efficiencies of luminescence emission were calculated. Then comparison with erbium and holmium doped floride glass and other matrices were made.

Variation of efficiency droop with quantum well thickness in In GaN/GaN green light-emitting diode

In GaN/GaN multiple quantum well（MQW） green light-emitting diodes（LEDs） with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well（QW） thickness. When the QW is very thin, the increase of In GaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced nonradiative recombination process and the weak delocalization effect.

Optical simulation of external quantum efficiency spectra of CuIn_(1-x)Ga_xSe_2 solar cells from spectroscopic ellipsometry inputs

Applications of in-situ and ex-situ spectroscopic ellipsometry （SE） are presented for the development of parametric expressions that define the real and imaginary parts （ε1, ε2） of the complex dielectric function spectra of thin film solar cell components. These spectra can then be utilized to analyze the structure of complete thin film solar cells. Optical and structural/compositional models of complete solar cells developed through least squares regression analysis of the SE data acquired for the complete cells enable simulations of external quantum efficiency （EQE） without the need for variable parameters. Such simulations can be compared directly with EQE measurements. From these comparisons, it becomes possible to understand in detail the origins of optical and electronic gains and losses in thin film photovoltaics （PC） technologies and, as a result, the underlying performance limitations. In fact, optical losses that occur when above-bandgap photons are not absorbed in the active layers can be distinguished from electronic losses when electron-hole pairs generated in the active layers are not collected. This overall methodology has been applied to copper indium-gallium diselenide （Culn1-xGaxSe2; CIGS） solar cells, a key commercialized thin film PV technology. CIGS solar cells with both standard thickness （〉2 μm） and thin （〈1 μm） absorber layers are studied by applying SE to obtain inputs for EQE simulations and enabling comparisons of simulated and measured EQE spectra. SE data analysis is challenging for CIGS material components and solar cells because of the need to develop an appropriate （ε1, ε2） database for the CIGS alloys and to extract absorber layer Ga profiles for accurate structural/compositional models. For cells with standard thickness absorbers, excellent agreement is found between the simulated and measured EQE, the latter under the assumption of 100% collection from the active layers, which include the CIGS bulk and CIGS/CdS heterojunction interface layers. For cells with thin absorbers, however, an observed difference between the simulated and measured EQE can be attributed to losses via carrier recombination within a- 0.15 μm thickness of CIGS adjacent to the Mo back contact. By introducing a carrier collection probability profile into the simulation, much closer agreement is obtained between the simulated and measured EQE. In addition to the single spot capability demonstrated in this study, ex-situ SE can be applied as well to generate high resolution maps of thin film multilayer structure, component layer properties and their profiles, as well as short-circuit current density predictions. Such mapping is possible due to the high measurement speed of 〈1 s per （ , 4） spectra achievable by the multichannel ellipsometer.

Optimum Dark Adaptation Period for Evaluating the Maximum Quantum Efficiency of Photosystem II in Ozone-Exposed Rice Leaves

Because the transient O3 injury of leaves is lost with time, the evaluation of O3 effect on the maximum quantum efficiency of PSII (Fv/Fm) is difficult. Thus, the authors examined Fv/Fm in rice leaves exposed to different O3 concentrations (0, 0.1, and 0.3 cm3·m-3, expressed as O0, O0.1, and O0.3) under different dark adaptation periods (0, 1, 5, 10, 20, and 30 min, expressed as D0, D1, D5, D10, D20, and D30) to ascertain its optimum time span. Fv/Fm was inhibited by O3;however in the O0 and O0.1 plants, it recovered during dark adaptation. In the O0.3 plants, Fv/Fm decreased gradually with time. F0 was found to be increased by O3, and it increased further in the O0.3 plants during dark adaptation. Under a high light intensity, Fm was decreased by O3, and the O3-induced damage to Fv/Fm was therefore more pronounced. However, the sensitivity of

Influence of Disassociation Probability on External Quantum Efficiency in Organic Electrophosphorescent Devices

An analytical model is presented to calculate the disassociation probability and the external quantum efficiency at high field in doped organic electrophosphorescence(EPH) devices. The charge recombination process and the triplet(T)-triplet(T) annihilation processes are taken into account in this model. The influences of applied voltage and the thickness of the device on the disassociation probability, and of current density and the thickness of the device on the external quantum efficiency are studied thoroughly by including and ignoring the disassociation of excitons. It is found that the dissociation probability of excitons will come close to 1 at high electric field, and the external EPH quantum efficiency is almost the same at low electric field. There is a large discrepancy of the external EPH quantum efficiency at high electric field for including or ignoring the disassociation of excitons.