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15158A SP6T RF switch based on IBM SOI CMOS technology
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作者 程知群 颜国国 +5 位作者 倪文华 朱丹丹 徐文华 李进 陈帅 刘国华 《Journal of Semiconductors》 EI CAS CSCD 2016年第5期110-113,共4页
This paper presents the design of single-pole six-throw (SP6T) RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The ... This paper presents the design of single-pole six-throw (SP6T) RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is (+2.46 V, 0, -2.46 V) in the frequency from 0.1 to 2.7 GHz. 展开更多
关键词 silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) single-pole six-throw (sp6t) RF switch
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